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SN74S473N

Texas Instruments

SN74S473N by Texas Instruments

SN74S473N by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density and 75ns max access time. It operates b/w 0-70°C, making it suitable for commercial applications requiring fast memory retrieval in a 20-terminal rectangular package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,856 parts In-Stock

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Digiode

USA . 820 parts In-Stock

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820

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Resion

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Parana Technologies

USA . 1,263 parts In-Stock

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$3.475

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$4.000

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1,263

$3.475

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DigiPath Technology Company

USA . 899 parts In-Stock

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$3.826

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899

$3.826

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IDEA Electronic Components Group

UK . 2,105 parts In-Stock

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$3.904

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$3.514

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$3.904

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ChromeModa Solutions

Germany . 617 parts In-Stock

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$3.904

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$3.201

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617

$3.904

$3.201

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AZTECH Wire

Italy . 316 parts In-Stock

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$10.065

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One Stop Electronics

USA . 908 parts In-Stock

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$15.000

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Corphita

USA . 1,737 parts In-Stock

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Kepictronics

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Assy Fe

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Overview

Looking for a reliable and high-quality OTP ROM solution? Look no further than the SN74S473N by Texas Instruments. With a reputation for excellence in manufacturing, Texas Instruments offers a top-tier product that is perfect for a wide range of applications. Whether you need to store program instructions or data, this OTP ROM provides the value, benefits, and advantages that customers are looking for. Trust Texas Instruments to deliver outstanding performance and reliability with the SN74S473N.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the OTP ROM, making it suitable for various applications.

No. of Terminals: 20

Having a sufficient number of terminals allows for easy connections and integration into different systems or devices.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures reliable performance even in demanding environments.

Organization: 512X8

This organization allows for efficient data storage and retrieval, enhancing the overall functionality of the OTP ROM.

Technology: TTL

Using TTL technology ensures compatibility with a wide range of systems and devices, making it a versatile choice.

Memory Density: 4096 bit

With a high memory density, this OTP ROM can store a large amount of data efficiently.

Technical Specifications

OTP ROM SN74S473N attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74S473N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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