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TBP18SA030NP1

Texas Instruments

TBP18SA030NP1 by Texas Instruments

TBP18SA030NP1 by Texas Instruments is a 32x8 OTP ROM with 5V supply, 40ns access time, and 110mA max supply current. It is used in commercial applications requiring non-volatile memory storage in a rectangular plastic/epoxy package with 16 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,545 parts In-Stock

1+ parts

-

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5,545

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Digiode

USA . 2,525 parts In-Stock

1+ parts

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2,525

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 960 parts In-Stock

1+ parts

$4.061

100+ parts

-

1k+ parts

$4.525

10k+ parts

-

960

$4.061

-

$4.525

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DigiPath Technology Company

USA . 2,101 parts In-Stock

1+ parts

$4.472

100+ parts

$4.114

1k+ parts

-

10k+ parts

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2,101

$4.472

$4.114

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IDEA Electronic Components Group

UK . 2,047 parts In-Stock

1+ parts

$4.563

100+ parts

-

1k+ parts

$4.107

10k+ parts

-

2,047

$4.563

-

$4.107

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ChromeModa Solutions

Germany . 545 parts In-Stock

1+ parts

$4.563

100+ parts

$3.742

1k+ parts

-

10k+ parts

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545

$4.563

$3.742

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AZTECH Wire

Italy . 276 parts In-Stock

1+ parts

$10.324

100+ parts

-

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276

$10.324

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One Stop Electronics

USA . 685 parts In-Stock

1+ parts

$16.000

100+ parts

-

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685

$16.000

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Corphita

USA . 1,128 parts In-Stock

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1,128

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Overview

Enhance your product designs with the TBP18SA030NP1 by Texas Instruments, a high-quality OTP ROM that offers reliability and performance. Manufactured by the renowned Texas Instruments, this product is ideal for a wide range of applications. Its value lies in its efficient operation, compatibility with various systems, and ease of integration. Experience the benefits of this product's advanced technology and unlock new possibilities for your projects. Elevate your designs with the TBP18SA030NP1 and stay ahead in the competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides compatibility with standard power supplies, making it easy to integrate into existing systems.

No. of Terminals: 16

With 16 terminals, this OTP ROM offers flexibility in connecting to other components or systems, allowing for versatile usage scenarios.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in demanding environmental conditions.

Organization: 32X8

The 32x8 organization provides a good balance between storage capacity and speed, making it suitable for various data storage and retrieval tasks.

Technology: TTL

Being based on TTL technology, the OTP ROM offers fast access times and low power consumption, making it efficient for data processing applications.

Maximum Access Time: 40 ns

The maximum access time of 40 ns ensures quick retrieval of information stored in the OTP ROM, contributing to overall system performance.

Technical Specifications

OTP ROM TBP18SA030NP1 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

Memory Width:

8

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

OTP ROMs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TBP18SA030NP1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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