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TBP18S42NP3

Texas Instruments

TBP18S42NP3 by Texas Instruments

TBP18S42NP3 by Texas Instruments is a 512x8 OTP ROM with 4096-bit memory density. It operates at 5V, has a max access time of 75ns, and supports TTL technology. This rectangular package with 20 terminals is ideal for commercial applications requiring non-volatile memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,518 parts In-Stock

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8,518

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Digiode

USA . 1,961 parts In-Stock

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1,961

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Distributors (Availability)

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One Stop Electronics

USA . 996 parts In-Stock

1+ parts

$2.000

100+ parts

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996

$2.000

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Parana Technologies

USA . 1,071 parts In-Stock

1+ parts

$3.646

100+ parts

-

1k+ parts

$4.156

10k+ parts

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1,071

$3.646

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$4.156

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DigiPath Technology Company

USA . 503 parts In-Stock

1+ parts

$4.015

100+ parts

$3.694

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503

$4.015

$3.694

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ChromeModa Solutions

Germany . 3,759 parts In-Stock

1+ parts

$4.097

100+ parts

$3.360

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3,759

$4.097

$3.360

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IDEA Electronic Components Group

UK . 636 parts In-Stock

1+ parts

$4.097

100+ parts

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$3.687

10k+ parts

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636

$4.097

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$3.687

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AZTECH Wire

Italy . 330 parts In-Stock

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$17.175

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330

$17.175

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Corphita

USA . 4,648 parts In-Stock

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Overview

Enhance your electronic designs with the TBP18S42NP3 OTP ROM by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions for a wide range of applications. This OTP ROM offers customers value, benefits, and advantages that go beyond just memory storage. With its 512X8 organization and fast access time of 75 ns, this product is perfect for enhancing the performance of your designs. Upgrade your projects today with the TBP18S42NP3 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this OTP ROM durable and resistant to damage.

Nominal Supply Voltage / Vsup (V): 5

With a supply voltage of 5V, this OTP ROM can easily be integrated into various electronic systems and circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and installation of this OTP ROM in different electronic devices.

Maximum Operating Temperature: 70 °C

The OTP ROM can operate efficiently at temperatures up to 70°C, ensuring reliable performance in various environments.

Organization: 512X8

With an organization of 512 words by 8 memory width, this OTP ROM offers sufficient storage capacity for storing program data.

Technology: TTL

The use of TTL technology in this OTP ROM ensures fast and reliable data processing and retrieval.

No. of Words: 512 words

The OTP ROM has a high number of words, allowing for extensive data storage and access.

Memory Width: 8

An 8 memory width enhances the data processing capabilities of this OTP ROM, making it suitable for complex applications.

Memory Density: 4096 bit

With a memory density of 4096 bit, this OTP ROM offers ample storage space for program data.

Maximum Access Time: 75 ns

The maximum access time of 75 ns ensures quick retrieval of data from this OTP ROM, enhancing overall system performance.

Technical Specifications

OTP ROM TBP18S42NP3 attributes and parameters. Explore more OTP ROM devices from Texas Instruments

Specs

Maximum Access Time:

75 ns

JESD-30 Code:

R-PDIP-T20

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

20

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Sub-Category:

OTP ROMs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TBP18S42NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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