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82S129/BEA

NXP Semiconductors

82S129/BEA by NXP Semiconductors

82S129/BEA by NXP Semiconductors is a military-grade OTP ROM with a 256x4 organization, operating asynchronously at 5V. It features a ceramic, glass-sealed package and supports temperatures from -55 °C to 125 °C. Ideal for reliable data storage in harsh environments.

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Lifecycle Status

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Digiode

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Anansix

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Odi Ramu Company

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LWI Electronics Inc

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PC Components Company LLC

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Bristol Electronics

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Mil-Aero Solutions, Inc.

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Native Components

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Northwest PG Solutions

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One Stop Electronics

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Overview

Elevate your designs with the 82S129/BEA from NXP Semiconductors, a top-notch OTP ROM solution renowned for its unmatched reliability and robust performance. Crafted with precision in a durable ceramic package, this device excels in mission-critical applications, ensuring data integrity even in extreme conditions. With NXP's legacy of innovation, you gain peace of mind, knowing your projects are backed by industry-leading technology that enhances efficiency and longevity.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The durable ceramic and glass-sealed construction offers excellent protection against environmental factors, enhancing the reliability of the device.

Package Shape: RECTANGULAR

The rectangular design allows for efficient use of PCB space, making it suitable for various electronic applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operation enables faster access times, improving the overall performance in applications requiring quick data retrieval.

Nominal Supply Voltage / Vsup: 5 V

Standard 5V operation makes it easy to integrate into existing systems without requiring additional voltage modification.

No. of Terminals: 16

The 16 terminals provide flexibility in circuit design and allow for multiple connections in various configurations.

Package Style (Meter): IN-LINE

In-line packaging facilitates easy installation and reduces space requirements on the circuit board.

Maximum Operating Temperature: 125 °C

High temperature tolerance ensures reliable operation in demanding environments, suitable for military-grade applications.

Organization: 256X4

This organization allows for efficient data storage and retrieval, catering to specific application needs.

Output Characteristics: 3-STATE

The 3-state output enables better control of bus systems and reduces conflicts in shared busses, improving overall system performance.

Minimum Operating Temperature: -55 °C

Extensive temperature range makes this OTP ROM suitable for extreme climates, crucial for aerospace and military applications.

Terminal Position: DUAL

Dual terminal positioning enhances connectivity options, promoting compatibility with different circuit designs.

Maximum Seated Height: 5.08 mm

Compact seated height supports space-saving designs in tight electronic layouts, facilitating efficient board design.

Width: 7.62 mm

A narrow width allows for greater density of components on a PCB, optimizing the space usage in electronic devices.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage ensures compatibility with a wide range of devices, enhancing design flexibility.

Length: 19.535 mm

The specific length of the component aids in precise placement on the PCB, ensuring optimal connectivity.

Temperature Grade: MILITARY

Designed for military applications, this component meets rigorous standards for durability and performance in harsh environments.

Technology: BIPOLAR

Bipolar technology provides robust performance with fast switching speeds, which is vital for high-speed applications.

Parallel or Serial: PARALLEL

Parallel data access allows for higher throughput, suitable for applications that require rapid data processing.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer better mechanical stability and are advantageous in applications requiring high reliability.

No. of Words: 256 words

A memory size of 256 words is adequate for various applications needing moderate data storage capabilities.

Memory Width: 4

A memory width of 4 bits allows for efficient data handling, essential for compact data applications.

Terminal Pitch: 2.54 mm

Standard 2.54 mm terminal pitch ensures compatibility with a wide range of PCB layouts and components.

No. of Words Code: 256

Having 256 word codes supports diverse programming options, making this OTP ROM adaptable for custom applications.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V provides flexibility in applications, allowing for safe operation across various power ranges.

Memory Density: 1024 bit

The 1024-bit memory density is suitable for applications requiring a balance between data storage capacity and cost-effectiveness.

Memory IC Type: OTP ROM

The OTP ROM type is designed for single-time programming, ideal for applications where data permanence is necessary.

Maximum Access Time: 60 ns

A fast access time of 60 ns allows for quick data retrieval, enhancing the responsiveness of the system.

Technical Specifications

OTP ROM 82S129/BEA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.535 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X4

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

82S129/BEA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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