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82S126/BEA

NXP Semiconductors

82S126/BEA by NXP Semiconductors

82S126/BEA by NXP Semiconductors is a military-grade OTP ROM with a 256x4 organization, operating at 5V. It features an asynchronous mode and open-collector output, making it ideal for reliable data storage in harsh environments. Its ceramic, glass-sealed package ensures durability.

Median Price

$19.713

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Freelance Electronics

USA . 6 parts In-Stock

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$20.699

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Anansix

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Electronic Expediters

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Mil-Aero Solutions, Inc.

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Native Components

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Northwest PG Solutions

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One Stop Electronics

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Glotronic Ltd.

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Overview

Unlock unparalleled reliability and performance with the 82S126/BEA from NXP Semiconductors. Crafted in robust ceramic and glass-sealed packaging, this OTP ROM is engineered to excel in harsh environments, ensuring your critical applications run smoothly from -55 °C to 125 °C. Trust an industry leader committed to quality and innovation, delivering a product that enhances data integrity while offering exceptional adaptability for military, aerospace, and automotive needs. Experience unmatched value and peace of mind today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed construction provides excellent protection against environmental factors, ensuring the longevity and reliability of the device.

Package Shape: RECTANGULAR

The rectangular shape allows for compact assembly and easy integration in various electronic designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operation enhances system flexibility by allowing the memory to operate independently from the processor.

Nominal Supply Voltage / Vsup (V): 5

A nominal voltage of 5V is standard, making the device compatible with common digital circuits.

No. of Terminals: 16

With 16 terminals, this device provides a good balance between complexity and functionality, enabling efficient communication.

Package Style (Meter): IN-LINE

An in-line package style allows for easy mounting on PCBs and is ideal for applications needing space-efficient components.

Maximum Operating Temperature: 125 °C

This high-temperature capability ensures reliable operation in demanding environments.

Organization: 256X4

The organization of 256x4 bits provides a manageable structure for data storage and retrieval.

Output Characteristics: OPEN-COLLECTOR

Open-collector outputs allow for wired logic configurations, providing flexibility in circuit design.

Minimum Operating Temperature: -55 °C

Operational capability down to -55 °C makes this product suitable for extreme environments.

Terminal Position: DUAL

Dual terminal positioning facilitates both sides of the package access, simplifying PCB layout and assembly.

Maximum Seated Height: 5.08 mm

A seated height of 5.08 mm ensures compatibility with various mounting solutions.

Width: 7.62 mm

Width of 7.62 mm promotes a compact footprint, allowing more devices to fit into limited board space.

Minimum Supply Voltage (Vsup): 4.5 V

A minimum supply voltage of 4.5 V ensures the device can operate efficiently in a variety of scenarios.

Length: 19.535 mm

The length is optimized for compatibility with standard in-line mounting configurations.

Temperature Grade: MILITARY

Military-grade specifications offer enhanced durability and reliability in critical applications.

Technology: BIPOLAR

Bipolar technology provides high-speed performance and low power consumption, making it suitable for various applications.

Parallel or Serial: PARALLEL

Parallel access allows for faster data reads and writes, boosting overall system performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong mechanical connections, suitable for high-stress applications.

No. of Words: 256 words

With 256 words of storage, this device provides sufficient capacity for a range of applications.

Memory Width: 4

A memory width of 4 bits allows for efficient data processing and storage.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm is standard, facilitating compatibility with numerous PCB designs.

No. of Words Code: 256

Having 256 words increases versatility for various coding and data storage applications.

Maximum Supply Voltage (Vsup): 5.5 V

A maximum supply voltage of 5.5 V ensures the device operates consistently under a wider range of conditions.

Memory Density: 1024 bit

A memory density of 1024 bits provides a good balance of memory size and complexity for efficient data handling.

Memory IC Type: OTP ROM

As an OTP ROM, this memory type is ideal for applications where programming is required only once, ensuring data permanence.

Maximum Access Time: 60 ns

With a maximum access time of 60 ns, this product offers quick data access, enhancing overall system speed.

Technical Specifications

OTP ROM 82S126/BEA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.535 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X4

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

82S126/BEA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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