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82S123B/BEA

NXP Semiconductors

82S123B/BEA by NXP Semiconductors

82S123B/BEA by NXP Semiconductors is a military-grade OTP ROM with a 5V supply, featuring a 32x8 organization and max access time of 30 ns. It operates asynchronously in a dual terminal, through-hole package. Ideal for reliable data storage in harsh environments.

Median Price

$25.024

Lifecycle Status

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4

In-Stock Inventory

1k+

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Freelance Electronics

USA . 1 parts In-Stock

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Anansix

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Digiode

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Vyrian

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Native Components

USA . 602 parts In-Stock

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$0.085

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Northwest PG Solutions

USA . 564 parts In-Stock

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Ampacity Inc.

Singapore . 1,488 parts In-Stock

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One Stop Electronics

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UNI Independent Distributors

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Overview

Elevate your projects with the 82S123B/BEA from NXP Semiconductors, a robust OTP ROM that promises unparalleled reliability and precision. Crafted with military-grade quality in a durable ceramic package, this memory solution excels in extreme conditions, making it ideal for automotive, aerospace, and industrial applications. Experience faster access times and energy efficiency, ensuring optimal performance for your critical systems. Trust in NXP's legacy of innovation to deliver exceptional value and peace of mind.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed materials provides durability and resistance to environmental factors, ensuring a longer lifespan for the OTP ROM.

Package Shape: RECTANGULAR

A rectangular package shape is commonly used in various applications, making it compatible with standard PCB layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler integration into systems, enabling quicker design and shorter time-to-market.

Nominal Supply Voltage / Vsup: 5 V

A nominal operating voltage of 5 V makes this OTP ROM compatible with a wide range of digital circuits.

No. of Terminals: 16

With 16 terminals, this OTP ROM offers sufficient connections for various applications without needing excessive space.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy handling and assembly, enhancing manufacturability.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C indicates robustness for high-temperature environments, making it suitable for military applications.

Organization: 32X8

The 32X8 organization provides a balanced structure, allowing efficient data storage and retrieval in the ROM.

Output Characteristics: 3-STATE

3-state output characteristics allow for greater flexibility in interfacing with other digital circuits, reducing potential conflicts.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55 °C, this OTP ROM ensures functionality in extreme cold climates.

Terminal Position: DUAL

Dual terminal positions enhance the design's versatility, making it easier to adapt to different board layouts.

Maximum Seated Height: 5.08 mm

The compact seated height allows for efficient use of space on circuit boards, which is essential in compact designs.

Width: 7.62 mm

A width of 7.62 mm strikes a good balance between size and performance, suitable for a wide range of devices.

Length: 19.535 mm

The specified length allows for adequate spacing between other components while maintaining effective operation.

Temperature Grade: MILITARY

A military temperature grade ensures reliability and performance in demanding environments, making it ideal for defense applications.

Technology: BIPOLAR

Bipolar technology provides excellent speed and performance, making this OTP ROM suitable for fast-access applications.

Parallel or Serial: PARALLEL

Parallel access enables faster data retrieval, enhancing overall system efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are easier to solder, ensuring reliable connections in rugged environments.

No. of Words: 32 words

With 32 words available, this OTP ROM offers adequate storage for small to medium-sized applications.

Memory Width: 8

An 8-bit memory width allows for efficient data processing in 8-bit microcontroller systems.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm is standard and ensures compatibility with most PCB designs, simplifying the integration process.

No. of Words Code: 32

Having 32 words code provides enough options for varied application requirements while keeping design simple.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5 V ensures safe operation under various conditions and protects against over-voltage scenarios.

Memory Density: 256 bit

A memory density of 256 bits allows this OTP ROM to store essential data compactly, making it ideal for space-sensitive applications.

Memory IC Type: OTP ROM

As an OTP ROM, it guarantees secure data storage that cannot be altered after programming, making it suitable for applications requiring data integrity.

Maximum Access Time: 30 ns

A maximum access time of 30 ns allows for quick data retrieval, enhancing system performance in time-sensitive applications.

Technical Specifications

OTP ROM 82S123B/BEA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

30 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.535 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

82S123B/BEA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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