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82S126/BFA

NXP Semiconductors

82S126/BFA by NXP Semiconductors

82S126/BFA by NXP Semiconductors is a military-grade OTP ROM featuring a 256x4 organization and operates asynchronously. It supports a supply voltage range of 4.5V to 5.5V, with a max access time of 60 ns. Ideal for applications requiring reliable data storage in harsh environments.

Median Price

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Lifecycle Status

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4

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1k+

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Anansix

USA . 2,299 parts In-Stock

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Digiode

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Vyrian

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Mil-Aero Solutions, Inc.

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Native Components

USA . 685 parts In-Stock

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$10.885

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Northwest PG Solutions

USA . 261 parts In-Stock

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$10.776

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One Stop Electronics

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UNI Independent Distributors

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Authorized Procurement Solutions

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Corphita

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Overview

Unlock unparalleled reliability and innovation with the 82S126/BFA from NXP Semiconductors. This military-grade OTP ROM offers exceptional performance in harsh environments, ensuring your designs maintain integrity under extreme conditions. With a robust ceramic package and asynchronous operation, it’s perfect for critical applications requiring long-lasting data storage. Choose NXP for unbeatable quality and elevate your projects with technology you can trust!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable ceramic and metal-sealed construction ensures reliability and longevity, making it suitable for harsh environments.

Surface Mount: YES

Surface mount capability allows for efficient space utilization on PCBs, enabling compact device designs.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into standard layouts, streamlining manufacturing processes.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies signal timing, allowing for flexible system designs without clock constraints.

Nominal Supply Voltage / Vsup: 5V

The nominal supply voltage aligns with common digital logic levels, ensuring compatibility with a wide range of systems.

No. of Terminals: 16

With 16 terminals, this OTP ROM can connect to multiple data lines, optimizing data throughput.

Package Style (Meter): FLATPACK

The flatpack style promotes efficient heat dissipation, enhancing reliability during operation.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature expands the range of potential applications, suitable for demanding environments.

Organization: 256X4

The 256x4 organization offers a balance between capacity and access speed, making it ideal for various applications.

Output Characteristics: OPEN-COLLECTOR

Open-collector outputs simplify interfacing with various logic families, providing design flexibility.

Minimum Operating Temperature: -55 °C

A wide temperature range enables operation in extreme conditions, enhancing reliability in military and aerospace applications.

Terminal Position: DUAL

Dual terminal positioning allows for more straightforward PCB layout and reduces the risk of misalignment during assembly.

Maximum Seated Height: 2.159 mm

A low seated height fosters compatibility with slim designs, catering to modern compact electronic devices.

Width: 6.731 mm

The width of 6.731 mm balances compactness with the ability to accommodate ample connections, facilitating design flexibility.

Minimum Supply Voltage (Vsup): 4.5V

A flexible minimum supply voltage broadens compatibility with various power supply systems.

Temperature Grade: MILITARY

MILITARY grade certification ensures robust performance in critical applications, adhering to stringent reliability standards.

Technology: BIPOLAR

Bipolar technology offers high performance and speed, making it suitable for high-demand applications.

Parallel or Serial: PARALLEL

The parallel interface enables high-speed data processing, ensuring quick access to stored information.

No. of Words: 256 words

With 256 words available, it provides an adequate storage capacity for many applications, particularly in embedded systems.

Memory Width: 4

A memory width of 4 bits optimizes data handling capabilities, enhancing processing efficiency.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is compatible with various PCB designs, simplifying component placement and soldering.

No. of Words Code: 256

Consistent with the organization, providing clarity in capacity specifications for developers.

Maximum Supply Voltage (Vsup): 5.5V

A safe maximum supply voltage ensures sustainability and protects against voltage spikes, prolonging component life.

Memory Density: 1024 bit

A memory density of 1024 bits makes it suitable for storing moderate amounts of data efficiently.

Memory IC Type: OTP ROM

As an OTP ROM, this memory type allows for one-time programming, ideal for secure applications where data integrity is crucial.

Maximum Access Time: 60 ns

A maximum access time of 60 ns supports fast data retrieval, necessary for high-speed applications.

Technical Specifications

OTP ROM 82S126/BFA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

60 ns

JESD-30 Code:

R-CDFP-F16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X4

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.159 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.731 mm

Trade Compliance

82S126/BFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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