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82S129A/BFA

NXP Semiconductors

82S129A/BFA by NXP Semiconductors

82S129A/BFA by NXP Semiconductors is a military-grade OTP ROM with a 5V supply, featuring a 256x4 organization and max access time of 35 ns. Its ceramic, metal-sealed package ensures durability in harsh environments. Ideal for asynchronous applications requiring reliable data storage.

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1k+

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Anansix

USA . 2,364 parts In-Stock

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Digiode

USA . 425 parts In-Stock

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Vyrian

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One Stop Electronics

USA . 810 parts In-Stock

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Native Components

USA . 378 parts In-Stock

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$934.990

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$916.290

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$906.940

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$897.590

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Northwest PG Solutions

USA . 2,337 parts In-Stock

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UNI Independent Distributors

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Corphita

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Overview

Unlock unparalleled reliability and performance with the 82S129A/BFA OTP ROM from NXP Semiconductors. Renowned for their commitment to quality, NXP's robust design ensures optimal functionality in demanding environments, making it ideal for military and industrial applications. With exceptional temperature resilience and efficient asynchronous operation, this versatile memory solution delivers significant advantages, empowering your innovations while minimizing downtime. Choose NXP for unmatched excellence!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The robust construction enhances reliability and durability, making it suitable for harsh environments.

Surface Mount: YES

Surface mountability allows for easier incorporation into compact designs, saving PCB space.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout and integration into various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies design requirements and integration with other components.

Nominal Supply Voltage / Vsup: 5V

Standard supply voltage of 5V ensures compatibility with a wide range of electronics.

No. of Terminals: 16

A sufficient number of terminals allows for versatile connections and configurations.

Package Style (Meter): FLATPACK

The flatpack style aids in optimizing layout effectiveness and improving thermal performance.

Maximum Operating Temperature: 125 °C

High operating temperature range indicates adaptability for extreme conditions and reliability.

Organization: 256X4

The 256x4 organization enables efficient data storage and retrieval for various applications.

Output Characteristics: 3-STATE

3-state output allows for more flexible data handling and integration with other digital devices.

Minimum Operating Temperature: -55 °C

Low temperature tolerance ensures reliable operation in extremely cold environments.

Terminal Position: DUAL

Dual terminal positioning promotes effective use of board space and design flexibility.

Maximum Seated Height: 2.159 mm

Compact height minimizes board space requirements, ideal for low-profile applications.

Width: 6.731 mm

The width allows compatibility with tight designs while maintaining robust functionality.

Minimum Supply Voltage (Vsup): 4.5V

This flexibility in supply voltage enhances versatility in diverse circuits.

Temperature Grade: MILITARY

Military-grade specifications ensure the product meets rigorous reliability and performance standards.

Technology: BIPOLAR

Bipolar technology offers fast switching speeds and stable performance for critical applications.

Parallel or Serial: PARALLEL

Parallel operation provides faster data access which is crucial for performance-demanding applications.

Terminal Form: FLAT

Flat terminals enhance contact surface area for better connection reliability.

No. of Words: 256 words

This memory capacity is sufficient for a variety of applications while maintaining simplicity.

Memory Width: 4

A memory width of 4 bits allows for efficient data processing and storage.

Terminal Pitch: 1.27 mm

Standard terminal pitch facilitates compatibility with a broad range of circuit designs.

No. of Words Code: 256

The word code capacity reflects versatility in data handling and addressable memory.

Maximum Supply Voltage (Vsup): 5.5V

This upper limit on voltage supply enables compatibility with various power sources.

Memory Density: 1024 bit

High memory density allows for efficient data management and storage in compact designs.

Memory IC Type: OTP ROM

As a One-Time Programmable ROM, it offers a reliable solution for permanent data storage.

Maximum Access Time: 35 ns

Fast access time ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

OTP ROM 82S129A/BFA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-CDFP-F16

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

256X4

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.159 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.731 mm

Trade Compliance

82S129A/BFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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