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82S115/BKA

NXP Semiconductors

82S115/BKA by NXP Semiconductors

82S115/BKA by NXP Semiconductors is a military-grade OTP ROM with a 5V supply, featuring a max temp of 125 °C and 512x8 organization. It operates asynchronously with a max access time of 90 ns, ideal for reliable data storage in harsh environments. Its flatpack design ensures efficient surface mounting.

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Northwest PG Solutions

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One Stop Electronics

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Overview

Unlock reliability and performance with the 82S115/BKA from NXP Semiconductors, a leader in innovative electronic solutions. This high-quality OTP ROM boasts military-grade durability, ensuring dependable operation even in extreme conditions. Perfect for applications requiring secure data storage, it delivers unparalleled value and efficiency. Choose NXP for superior performance and peace of mind—your projects deserve nothing less!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust package provides excellent protection against environmental factors, ensuring durability and reliability in demanding applications.

Surface Mount: YES

Surface mount capability allows for a more compact design, making it suitable for modern electronic devices with space constraints.

Package Shape: RECTANGULAR

The rectangular shape is conducive to efficient PCB layout, facilitating easier integration into various circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data fetching without the need for clock synchronization, improving overall system responsiveness.

Nominal Supply Voltage / Vsup: 5 V

Standard 5V operation is compatible with most electronic systems, simplifying design efforts and reducing component count.

No. of Terminals: 24

A 24-terminal configuration provides sufficient connectivity options, enhancing versatility in circuit design.

Package Style (Meter): FLATPACK

The flatpack style minimizes height, allowing for space-efficient application in low-profile devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature rating makes this OTP ROM suitable for use in high-temperature environments.

Organization: 512X8

The organization of 512x8 bits allows efficient data management and easy interfacing with microcontrollers.

Output Characteristics: 3-STATE

3-state outputs enhance flexibility by allowing multiple devices to share a common bus, reducing the number of required connections.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation in extreme cold, making it suitable for military and aerospace applications.

Terminal Position: DUAL

Dual terminal positioning allows for easier mounting on PCB and better signal integrity.

Maximum Seated Height: 2.286 mm

Compact seated height enables integration into slim designs while conserving valuable board space.

Width: 9.144 mm

The moderate width strikes a balance between size and connectivity, making it versatile for various design applications.

Minimum Supply Voltage (Vsup): 4.5 V

Lower voltage operation extends the range of power supply compatibility, benefiting battery-operated devices.

Temperature Grade: MILITARY

Military-grade specification ensures reliable performance under rigorous conditions, ideal for applications that require high reliability.

Technology: BIPOLAR

Bipolar technology provides faster switching speeds, making it suitable for applications that demand high performance.

Parallel or Serial: PARALLEL

Parallel operation facilitates quick data access, enhancing performance in high-speed applications.

Terminal Form: FLAT

Flat terminals improve contact reliability and are easier to solder, simplifying the assembly process.

No. of Words: 512 words

512 words of storage allow for adequate data storage, making it suitable for moderate memory requirements.

Memory Width: 8

8-bit memory width strikes a good balance between performance and data bandwidth, making it suitable for a variety of applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm facilitates compatibility with a wide range of PCB designs and components.

No. of Words Code: 512

The coding of 512 words offers a structured format for data input and retrieval, enhancing user interaction.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage allows for performance headroom in various application environments.

Memory Density: 4096 bit

A density of 4096 bits provides an efficient data storage solution, allowing for sufficient storage space within a compact form factor.

Memory IC Type: OTP ROM

As an OTP ROM type, it allows for one-time programming, safeguarding sensitive data in a permanent way without the risk of accidental overwrite.

Maximum Access Time: 90 ns

With a maximum access time of 90 ns, this IC ensures rapid data retrieval, crucial for high-speed applications.

Technical Specifications

OTP ROM 82S115/BKA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

R-CDFP-F24

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.286 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

9.144 mm

Trade Compliance

82S115/BKA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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