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82S123B/BFA

NXP Semiconductors

82S123B/BFA by NXP Semiconductors

82S123B/BFA by NXP Semiconductors is a military-grade OTP ROM with a 256-bit density, operating at 5V. It features a max access time of 30 ns and operates asynchronously in a flatpack package. Ideal for reliable data storage in harsh environments.

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1k+

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Digiode

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Vyrian

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Anansix

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Manoshevitz Elec. Sales

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One Stop Electronics

USA . 933 parts In-Stock

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Elevate your designs with the 82S123B/BFA from NXP Semiconductors, a top-tier choice in the OTP ROM category. Crafted with precision in durable ceramic and metal-sealed packaging, this robust component thrives in demanding environments, ensuring reliability even at extreme temperatures. Enjoy seamless asynchronous operation and enhanced performance in diverse applications, from telecommunications to military systems. Trust NXP's legacy of innovation and quality to power your projects with unmatched efficiency and longevity!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable construction ensures excellent protection against environmental factors, making the product suitable for demanding applications.

Surface Mount: YES

Surface mount technology allows for easier integration into compact designs, enhancing space efficiency on PCBs.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization and simplifies layout designs for various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for quicker response times, making it ideal for fast signal processing tasks.

Nominal Supply Voltage / Vsup: 5 V

Operating at a nominal supply voltage of 5V ensures compatibility with most typical digital systems and simplifies integration.

No. of Terminals: 16

A sufficient number of terminals allows for versatile connections and ensures robust signal pathways.

Package Style (Meter): FLATPACK

The flatpack style supports low-profile installations, which is advantageous in space-constrained environments.

Maximum Operating Temperature: 125 °C

Designed to withstand high temperatures, making it suitable for military and industrial applications.

Organization: 32X8

This organization means efficient data storage, providing flexibility in memory management for various applications.

Output Characteristics: 3-STATE

The 3-state output enhances bus system efficiency by allowing multiple devices to connect and control data flow effectively.

Minimum Operating Temperature: -55 °C

Its extreme temperature range ensures reliability in harsh environments, expanding potential use cases.

Terminal Position: DUAL

Dual terminal positioning facilitates straightforward mounting, increasing ease of use in assembly processes.

Maximum Seated Height: 2.159 mm

A low seated height allows for enhanced compatibility with compact designs and high-density layouts.

Width: 6.731 mm

A compact width offers flexibility in PCB design, making it suitable for various form factors.

Minimum Supply Voltage (Vsup): 4.5 V

With a low minimum supply voltage, this memory can easily interface with a range of digital circuits.

Temperature Grade: MILITARY

Meeting military-grade specifications assures exceptional durability and reliability in critical applications.

Technology: BIPOLAR

Bipolar technology provides fast operation speeds and excellent performance, making it ideal for demanding applications.

Parallel or Serial: PARALLEL

Parallel processing capabilities allow for faster data access and retrieval, enhancing overall performance in applications.

Terminal Form: FLAT

Flat terminal form helps in easy soldering onto PCBs, improving manufacturing efficiency.

No. of Words: 32 words

A sufficient number of words allows for versatile data storage and manipulation in various applications.

Memory Width: 8

With an 8-bit memory width, it can support a wide range of data formats, increasing operational versatility.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch provides good eye clearance for soldering, enhancing reliability in connections.

No. of Words Code: 32

Consistent with its word organization, this supports a standardized data structure for easier programming and interfacing.

Maximum Supply Voltage (Vsup): 5.5 V

Allows for a margin of flexibility in design, making it easy to integrate within systems that may fluctuate slightly in supply voltage.

Memory Density: 256 bit

A 256-bit density translates to efficient storage for various data types, making it suitable for diverse applications.

Memory IC Type: OTP ROM

As an OTP ROM, it supports field programming with a single write operation, ideal for versatile applications that require one-time data storage.

Maximum Access Time: 30 ns

A maximum access time of 30 ns promises quick data retrieval, suitable for high-speed applications requiring prompt responses.

Technical Specifications

OTP ROM 82S123B/BFA attributes and parameters. Explore more OTP ROM devices from NXP Semiconductors

Specs

Maximum Access Time:

30 ns

JESD-30 Code:

R-CDFP-F16

Memory Density:

256 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

32X8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.159 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

6.731 mm

Trade Compliance

82S123B/BFA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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