Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NSBC144WDP6T5G
Onsemi
NSBC144WDP6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.408W, hFE of 80, and max collector-emitter voltage of 50V. Ideal for switching applications, this small outline package with matte tin finish operates up to 150 °C.
BUILT IN BIAS RESISTOR RATIO IS 0.47
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-F6
e3
1
2
6
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.408 W
Not Qualified
BIP General Purpose Small Signal
YES
MATTE TIN
FLAT
DUAL
30
SWITCHING
SILICON
NSM11156DW6T1G
NSM11156DW6T1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a min hFE of 35, max VCE of 50V, and max IC of 0.1A. This surface-mount device in a small outline package is designed for high-speed operations in various electronic circuits.
BUILT IN BIAS RESISTOR RATIO IS 1.0
35
R-PDSO-G6
PNP
TIN
GULL WING
NSM46211DW6T1G
NSM46211DW6T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a hFE of 200, Vce of 65V, and Ic of 0.1A. Ideal for switching applications, this surface-mount device comes in a small outline package with Gull Wing terminals.
65 V
200
DNLS412E-13
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;
COLLECTOR
4 A
12 V
SINGLE
100
R-PDSO-G4
4
1 W
Other Transistors
150 MHz
DPLS315E-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;
3 A
15 V
150
100 MHz
FMMT493-TP
Micro Commercial Components
FMMT493-TP by Micro Commercial Components is a NPN BJT with 100V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high DC current gain of min 20 hFE. Suitable for surface mount designs requiring a single configuration transistor.
1 A
100 V
20
R-PDSO-G3
3
.25 W
10
2DD2098R-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 5 A;
5 A
20 V
180
R-PSSO-F3
220 MHz
BC859BLT1
BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.
30 V
220
TO-236AB
e0
235
.3 W
Tin/Lead (Sn/Pb)
BCX71JLT1
BCX71JLT1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a small outline package style, Gull Wing terminal form, and operates up to 150°C. Ideal for low-power applications requiring fast switching times in surface mount designs.
45 V
.35 W
800 ns
150 ns
DTA115EET1
DTA115EET1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor comes in a small outline package with gull wing terminals.
BUILT-IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
TIN LEAD
DTC115EET1
DTC115EET1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This surface-mount device comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.
BIP General Purpose Small Signals
DTC144TT1
DTC144TT1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This surface-mount transistor in a small outline package is ideal for compact electronic designs.
BUILT IN BIAS RESISTOR
160
.338 W
DTC144WET1
DTC144WET1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in gull wing package is ideal for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
UMA4NT1
UMA4NT1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and common emitter configuration. It has a max collector-emitter voltage of 50V, max current of 0.1A, and min DC current gain of 160 (hFE). Ideal for switching applications in small outline packages with gull wing terminals.
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
.15 W
UMC5NT1
UMC5NT1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements in a cascaded configuration with built-in resistors, offering a min hFE of 80. With a max IC of 0.1A and VCE of 50V, this transistor is designed for surface mount in small outline packages.
BUILT IN BIAS RESISTOR RATIO IS 1
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
NPN AND PNP
MMBT4126LT1
MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.
.2 A
25 V
60
.225 W
250 MHz
MUN5237T1
MUN5237T1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable for efficient assembly processes.
BUILT IN BIAS RESISTOR RATIO 0.47
.31 W
BCX56-10R1
BCX56-10R1 by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. It is used in amplifier applications due to its 1.56W power dissipation, small outline package style, and high DC current gain of 25 hFE. The transistor's flat terminal form and single terminal position make it suitable for surface mount configurations.
80 V
25
1.56 W
AMPLIFIER
130 MHz
MMJT350T1
MMJT350T1 by Onsemi is a PNP BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 2.75W, hFE of 20, and can handle up to 300V collector-emitter voltage. The package style is small outline, making it suitable for surface mount designs in various electronic circuits.
.5 A
300 V
TO-261AA
2.75 W
2DA1774Q-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
.15 A
120
140 MHz
2DA1774R-7
2DA1774S-7
270
BC847AT-7
BC847AT-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 110, and max IC of 0.1A. It operates up to 150°C, has VCE of 45V, and fT of 100MHz. Widely used in small signal applications due to its compact size and high transition frequency.
110
BC847BT-7
BC847BT-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.15W and min DC current gain of 200. It operates at up to 150°C, has a max collector-emitter voltage of 45V, and is ideal for small signal applications in electronics due to its high transition frequency of 100MHz.
BC857AT-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
125
BC857BT-7
MMBT2222AT-7
Diodes Inc. MMBT2222AT-7 is a NPN BJT with max. Vce of 40V, Ic of 0.6A, and fT of 300MHz. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation capabilities. Suitable for surface mount designs requiring fast switching speeds and moderate current handling.
.6 A
40 V
40
300 MHz
285 ns
35 ns
MMBT2907AT-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
60 V
50
200 MHz
100 ns
45 ns
MMBT3904T-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
250 ns
70 ns
MMBT4401T-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;
-55 Cel
255 ns
.75 V
MMBT4403T-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;
NSTB60BDW1T1
NSTB60BDW1T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.15A, and transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.
BUILT IN BIAS RESISTOR RATIO IS 2.13
MSC3930-BT1
MSC3930-BT1 by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style for surface mount assembly.
.03 A
70
NOT SPECIFIED
HN1B01FDW1T1
HN1B01FDW1T1 by Onsemi is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max power dissipation of 0.38 W and is commonly used as an amplifier in various applications. This surface mount transistor has a rectangular package shape with gull wing terminals, making it suitable for compact designs.
SEPARATE, 2 ELEMENTS
.38 W
NSL12AWT1
NSL12AWT1 by Onsemi is a PNP BJT transistor with 6 terminals, max power dissipation of 0.65W, and max collector current of 2A. Ideal for switching applications with a min DC current gain of 100, operating up to 150 °C.
2 A
.65 W
MMBT4401WT1
MMBT4401WT1 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.75V, hFE of 40, and can handle a max IC of 0.6A. With a small outline package style, it operates b/w -55 to 150 °C and has a transition frequency of 250 MHz suitable for various electronic circuits.
6.5 pF
MMBTA06WT1
MMBTA06WT1 by Onsemi is a NPN BJT transistor with 100 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 0.5A of current. With a package style of small outline, it is designed for surface mount assembly in electronic circuits.
MMBTA56WT1
MMBTA56WT1 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V, max collector current of 0.5A, and min DC current gain of 100. This surface-mount transistor operates up to 150 °C and has a transition frequency of 50MHz.
50 MHz
MMDT3904-7
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
MMDT3906-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
.2 W
300 ns
2DC4617R-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
180 MHz
2DC4617S-7
MMBT3904-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
FMMTL717QTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 205 MHz; Maximum Collector Current (IC): 1.25 A; Maximum Time At Peak Reflow Temperature (s): 30;
HIGH RELIABILITY
1.25 A
AEC-Q101
205 MHz
DDTC114WUA-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT-IN BIAS RESISTANCE RATIO IS 0.47
24
DDTC124XUA-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BUILT-IN BIAS RESISTANCE RATIO IS 2.14
.05 A
68
DDTC143FUA-7
BUILT-IN BIAS RESISTANCE RATIO IS 4.68
DDTC143XUA-7
BUILT-IN BIAS RESISTANCE RATIO IS 2.13
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