Loading...

100 MHz Small Signal Bipolar Junction Transistors (BJT) 272

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSA06,116 by NXP Semiconductors

MPSA06,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA06,126 by NXP Semiconductors

MPSA06,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

MPSA06,412 by NXP Semiconductors

MPSA06,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

80 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.25 V

PMBT5401,215 by NXP Semiconductors

PMBT5401,215

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;

.3 A

6 pF

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.5 V

PMBT5401,235 by NXP Semiconductors

PMBT5401,235

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .3 A; Qualification: Not Qualified;

.3 A

6 pF

150 V

SINGLE

50

TO-236AB

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.5 V

PMST5401,115 by NXP Semiconductors

PMST5401,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

PMST5401,135 by NXP Semiconductors

PMST5401,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

150 V

SINGLE

50

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

.5 V

BC846BPN-TP by Micro Commercial Components

BC846BPN-TP

Micro Commercial Components

BC846BPN-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP configuration. It has hFE of 200, VCE of 65V, and fT of 100MHz. Ideal for applications requiring small outline packages, such as amplifiers and signal processing circuits.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

Matte Tin (Sn)

GULL WING

DUAL

10

SILICON

100 MHz

DPLS315E-13 by Diodes Incorporated

DPLS315E-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

15 V

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC859BLT1 by Onsemi

BC859BLT1

Onsemi

BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.

.1 A

30 V

SINGLE

220

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

100 MHz

BC847AT-7 by Diodes Incorporated

BC847AT-7

Diodes Incorporated

BC847AT-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 110, and max IC of 0.1A. It operates up to 150°C, has VCE of 45V, and fT of 100MHz. Widely used in small signal applications due to its compact size and high transition frequency.

.1 A

45 V

SINGLE

110

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC847BT-7 by Diodes Incorporated

BC847BT-7

Diodes Incorporated

BC847BT-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.15W and min DC current gain of 200. It operates at up to 150°C, has a max collector-emitter voltage of 45V, and is ideal for small signal applications in electronics due to its high transition frequency of 100MHz.

.1 A

45 V

SINGLE

200

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC857AT-7 by Diodes Incorporated

BC857AT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC857BT-7 by Diodes Incorporated

BC857BT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

220

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

NSL12AWT1 by Onsemi

NSL12AWT1

Onsemi

NSL12AWT1 by Onsemi is a PNP BJT transistor with 6 terminals, max power dissipation of 0.65W, and max collector current of 2A. Ideal for switching applications with a min DC current gain of 100, operating up to 150 °C.

2 A

12 V

SINGLE

100

R-PDSO-G6

e0

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.65 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MMBTA06WT1 by Onsemi

MMBTA06WT1

Onsemi

MMBTA06WT1 by Onsemi is a NPN BJT transistor with 100 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 0.5A of current. With a package style of small outline, it is designed for surface mount assembly in electronic circuits.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC817-16-7 by Diodes Incorporated

BC817-16-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

60

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC817-25-7 by Diodes Incorporated

BC817-25-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC817-40-7 by Diodes Incorporated

BC817-40-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

170

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBT5401-7 by Diodes Incorporated

MMBT5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBT5551-7 by Diodes Incorporated

MMBT5551-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

.2 A

160 V

SINGLE

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5551-7 by Diodes Incorporated

MMDT5551-7

Diodes Incorporated

MMDT5551-7 by Diodes Inc. is a NPN BJT with 2 elements, ideal for switching applications. It has a min hFE of 30 and max VCE of 160V. With a fT of 100MHz, this transistor comes in a small outline package suitable for surface mount assembly.

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMST5401-7 by Diodes Incorporated

MMST5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMSTA05-7 by Diodes Incorporated

MMSTA05-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMSTA06-7 by Diodes Incorporated

MMSTA06-7

Diodes Incorporated

Diodes Inc.'s MMSTA06-7 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150°C with fT of 100MHz. Its small outline package makes it suitable for surface mount designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5401-7 by Diodes Incorporated

MMDT5401-7

Diodes Incorporated

MMDT5401-7 by Diodes Inc. is a PNP BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 50, Vce of 150V, and fT of 100MHz. This surface-mount device in a small outline package features Gull Wing terminals and silicon material for efficient performance.

.2 A

150 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5451-7 by Diodes Incorporated

MMDT5451-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MMBTA05-7 by Diodes Incorporated

MMBTA05-7

Diodes Incorporated

Diodes Inc.'s MMBTA05-7 is a NPN BJT transistor with hFE of 100, VCE of 60V, and IC of 0.5A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With fT at 100MHz, it's commonly used in isolated case connections.

ISOLATED

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBTA06-7 by Diodes Incorporated

MMBTA06-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

ISOLATED

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

STX790A by STMicroelectronics

STX790A

STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

BC847BPDXV6T1 by Onsemi

BC847BPDXV6T1

Onsemi

BC847BPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates up to 150 °C, with max collector-emitter voltage of 45V and transition frequency of 100MHz.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC858CDXV6T5 by Onsemi

BC858CDXV6T5

Onsemi

BC858CDXV6T5 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs requiring high-frequency amplification.

.1 A

30 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

100 MHz

MMBT123S-7-F by Diodes Incorporated

MMBT123S-7-F

Diodes Incorporated

Diodes Incorporated MMBT123S-7-F is a NPN BJT transistor with 150 min hFE, 18V VCEO, and 1A IC. Ideal for switching applications, it has a max power dissipation of 0.3W in a small outline package suitable for surface mount technology.

1 A

18 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MPSA12RLRA by Onsemi

MPSA12RLRA

Onsemi

MPSA12RLRA by Onsemi is a NPN Darlington BJT with hFE of 20000, VCE of 20V, and IC of 0.3A. It is used in applications requiring high DC current gain and operates up to 150 °C. Ideal for amplification tasks due to its high transition frequency of 100MHz.

.3 A

20 V

DARLINGTON

20000

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

Not Qualified

Other Transistors

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

BOTTOM

30

SILICON

100 MHz

BC847BV-7 by Diodes Incorporated

BC847BV-7

Diodes Incorporated

BC847BV-7 by Diodes Inc. is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for small signal applications in electronics due to its high transition frequency of 100MHz, low power dissipation of 0.15W, and compact small outline package design. Suitable for surface mount PCBs requiring dual terminal configuration with matte tin finish.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

100 MHz

DMMT5551-7 by Diodes Incorporated

DMMT5551-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

DMMT5401-7 by Diodes Incorporated

DMMT5401-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

.2 A

150 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

STX690A by STMicroelectronics

STX690A

STMicroelectronics

STX690A by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, a collector current of 3 A, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

2N5401RLRAG by Onsemi

2N5401RLRAG

Onsemi

2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.

.6 A

150 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

100 MHz

2N5550RLRPG by Onsemi

2N5550RLRPG

Onsemi

2N5550RLRPG by Onsemi is a NPN BJT transistor with 140V VCEO, 0.6A IC, and 100MHz fT. Ideal for amplifier applications due to its 1.5W Ptot, hFE of 20, and operating temp up to 150 °C. Features through-hole terminals in a cylindrical package shape.

.6 A

140 V

SINGLE

20

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

BC857CWT1G by Onsemi

BC857CWT1G

Onsemi

BC857CWT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 420, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with matte tin terminal finish.

.1 A

4.5 pF

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

.65 V

MBT35200MT1G by Onsemi

MBT35200MT1G

Onsemi

MBT35200MT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a min DC current gain of 100 and operates at a max temperature of 150°C. Ideal for switching applications due to its high transition frequency of 100MHz.

2 A

35 V

SINGLE

100

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.75 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC850CLT1G by Onsemi

BC850CLT1G

Onsemi

BC850CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. It is used in small signal applications due to its low power dissipation (0.3W), high collector-emitter voltage (45V), and compact gull wing package design.

.1 A

4.5 pF

45 V

SINGLE

420

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

40

SILICON

100 MHz

.6 V

BC847CTT1G by Onsemi

BC847CTT1G

Onsemi

BC847CTT1G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is designed for amplifier applications, featuring a small outline package style and Gull Wing terminal form for surface mount assembly. With a max operating temperature of 150°C, it offers a nominal transition frequency of 100MHz, making it suitable for high-frequency amplification needs.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

MPS6602G by Onsemi

MPS6602G

Onsemi

MPS6602G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.

1 A

40 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

300 ns

55 ns

MPS6651G by Onsemi

MPS6651G

Onsemi

MPS6651G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and max collector current of 1A. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.

1 A

25 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

75 ns

280 ns

MPS6652G by Onsemi

MPS6652G

Onsemi

MPS6652G by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation and hFE of 30. Packaged in cylindrical shape with through-hole terminals for easy installation.

1 A

40 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

75 ns

280 ns

MPS6652RLRAG by Onsemi

MPS6652RLRAG

Onsemi

MPS6652RLRAG by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation, hFE of 30, and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

1 A

40 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

75 ns

280 ns