Loading...

100 MHz Small Signal Bipolar Junction Transistors (BJT) 272

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC847BW/SNF by Nexperia

BC847BW/SNF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847BW/SNX by Nexperia

BC847BW/SNX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847CW/MIF by Nexperia

BC847CW/MIF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC847CW/MIX by Nexperia

BC847CW/MIX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BC847CW/SNF by Nexperia

BC847CW/SNF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847CW/SNX by Nexperia

BC847CW/SNX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

PBSS4320TVL by Nexperia

PBSS4320TVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 2 A; Terminal Form: GULL WING;

2 A

20 V

SINGLE

220

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

PBSS4350Z/ZLF by Nexperia

PBSS4350Z/ZLF

Nexperia

Nexperia's PBSS4350Z/ZLF is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 3A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a transition frequency of 100MHz, it offers high performance in compact designs.

COLLECTOR

3 A

50 V

SINGLE

200

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

PBSS5250XZ by Nexperia

PBSS5250XZ

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

2 A

50 V

SINGLE

300

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

Tin (Sn)

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-16W/MIX by Nexperia

BC807-16W/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

.5 A

45 V

SINGLE

100

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-25W/MIX by Nexperia

BC807-25W/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-40W/MIF by Nexperia

BC807-40W/MIF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC807-40W/MIX by Nexperia

BC807-40W/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC817-25W/MIX by Nexperia

BC817-25W/MIX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC817-40W/MIF by Nexperia

BC817-40W/MIF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC817-40W/MIX by Nexperia

BC817-40W/MIX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC847BPN/ZLF by Nexperia

BC847BPN/ZLF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847BPN/ZLX by Nexperia

BC847BPN/ZLX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847BS/ZLX by Nexperia

BC847BS/ZLX

Nexperia

BC847BS/ZLX by Nexperia is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 200, Vce of 45V, and fT of 100MHz. With Gull Wing terminals and small outline package style, it's suitable for surface mount designs in various electronic circuits.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC856S,125 by Nexperia

BC856S,125

Nexperia

BC856S,125 by Nexperia is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 110, Vce of 65V, and fT of 100MHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-speed switching capabilities.

.1 A

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC857BW/MIF by Nexperia

BC857BW/MIF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

.1 A

45 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC857BW/SNF by Nexperia

BC857BW/SNF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC857BW/SNX by Nexperia

BC857BW/SNX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC857CW/MIX by Nexperia

BC857CW/MIX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC857CQAZ by Nexperia

BC857CQAZ

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

.1 A

45 V

SINGLE

420

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

BC859CW/ZLF by Nexperia

BC859CW/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC859CW/ZLX by Nexperia

BC859CW/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC860CW/ZLF by Nexperia

BC860CW/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC860CW/ZLX by Nexperia

BC860CW/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BCR08PNH6433XTMA1 by Infineon Technologies

BCR08PNH6433XTMA1

Infineon Technologies

Infineon's BCR08PNH6433XTMA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a rectangular package with gull wing terminals. With a max collector-emitter voltage of 50V and max collector current of 0.07A, it offers high performance in a compact small outline package.

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR148SH6433XTMA1 by Infineon Technologies

BCR148SH6433XTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCR48PNH6433XTMA1 by Infineon Technologies

BCR48PNH6433XTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR523E6433HTMA1 by Infineon Technologies

BCR523E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 6;

BUILT IN BIAS RESISTOR RATIO IS 0.1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G6

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX5516E6433HTMA1 by Infineon Technologies

BCX5516E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Reference Standard: AEC-Q101;

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCR08PNH6727XTSA1 by Infineon Technologies

BCR08PNH6727XTSA1

Infineon Technologies

BCR08PNH6727XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor for switching applications. This transistor has a max collector-emitter voltage of 50V, DC current gain of 70, and can handle a collector current of 0.07A.

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCR48PNH6727 by Infineon Technologies

BCR48PNH6727

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BC846BPN-AU_R1_000A1 by Panjit International

BC846BPN-AU_R1_000A1

Panjit International

BC846BPN-AU_R1_000A1 by Panjit Int. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and Gull Wing terminals. Ideal for amplifier applications, it has hFE of 200, VCE of 65V, and fT of 100MHz. AEC-Q101 compliant with temp range -55 to 150°C, it's a versatile choice for compact designs needing high gain and frequency performance.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC857BW-G by Comchip Technology

BC857BW-G

Comchip Technology

BC857BW-G by Comchip Technology is a PNP BJT with max power dissipation of 0.15W, hFE of 220, and fT of 100MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

.1 A

SINGLE

220

e3

1

150 Cel

260

PNP

.15 W

Other Transistors

YES

TIN

10

100 MHz

SDBN500B01-7 by Diodes Incorporated

SDBN500B01-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;

.5 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.2 W

Other Transistors

YES

MATTE TIN

30

100 MHz

BC857BW-HF by Comchip Technology

BC857BW-HF

Comchip Technology

BC857BW-HF by Comchip Technology is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 220, and IC of 0.1A, it operates at a max temperature of 150°C. Its small outline package with GULL WING terminals makes it suitable for compact electronic designs.

.1 A

4.5 pF

45 V

SINGLE

220

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.15 W

.15 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

.65 V

BC847QAPN,147 by Nexperia

BC847QAPN,147

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;

COLLECTOR

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

BC857CQA,147 by Nexperia

BC857CQA,147

Nexperia

BC857CQA,147 by Nexperia is a PNP BJT transistor with hFE of 420. It has VCE of 45V and IC of 0.1A, suitable for switching applications. This SOT23-3 packaged transistor operates at a transition frequency of 100MHz, conforming to AEC-Q101 and IEC-60134 standards.

COLLECTOR

.1 A

45 V

SINGLE

420

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

ASS8050-H-HF by Comchip Technology

ASS8050-H-HF

Comchip Technology

Comchip Technology's ASS8050-H-HF is a NPN BJT with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

1.5 A

25 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

Tin (Sn)

GULL WING

DUAL

SILICON

100 MHz

.5 V

ASS8550-H-HF by Comchip Technology

ASS8550-H-HF

Comchip Technology

Comchip Technology's ASS8550-H-HF is a PNP BJT transistor with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

1.5 A

25 V

SINGLE

200

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

100 MHz

.5 V

2SC2655-Y(TE6,F,M) by Toshiba

2SC2655-Y(TE6,F,M)

Toshiba

The 2SC2655-Y(TE6,F,M) by Toshiba is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 2A. It is commonly used for switching applications due to its low VCEsat of 0.5V.

2 A

30 pF

50 V

SINGLE

120

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

.9 W

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V

BC847W-QF by Nexperia

BC847W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC857BS-QF by Nexperia

BC857BS-QF

Nexperia

BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC817-16-QVL by Nexperia

BC817-16-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V