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BC856S,125

Nexperia

BC856S,125 by Nexperia

BC856S,125 by Nexperia is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 110, Vce of 65V, and fT of 100MHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-speed switching capabilities.

Median Price

$0.029

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 24,000 parts In-Stock

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Farnell

UK . 9,250 parts In-Stock

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Arrow

USA . 6,000 parts In-Stock

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Verical

USA . 6,000 parts In-Stock

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Rochester

USA . 1,518 parts In-Stock

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Chip Stock

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Vyrian

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VNN

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Nova Conductors

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Ampacity Inc.

Singapore . 17,901 parts In-Stock

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$0.019

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Corohmni

South Africa . 810 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,829 parts In-Stock

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AZTECH Wire

Italy . 14,485 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 27,000 parts In-Stock

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Continental Prestige Electronics

USA . 23,700 parts In-Stock

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Eastek

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Argo Parts USA

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Supply Digital

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Bastille Electronics

Australia . 24 parts In-Stock

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Overview

Unlock the power of innovation with the BC856S,125 by Nexperia. As a leader in small signal bipolar junction transistors, Nexperia guarantees top-notch quality and reliability in every component. Ideal for switching applications, this PNP transistor offers seamless performance and efficiency. With a compact design and high DC current gain, this transistor is perfect for a wide range of electronic projects. Trust Nexperia to deliver cutting-edge technology that exceeds expectations. Elevate your designs with the BC856S,125 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can complement other components in a circuit.

Configuration: SEPARATE, 2 ELEMENTS

Having 2 separate elements allows for more flexibility in circuit design and applications.

Transistor Application: SWITCHING

Designed specifically for switching tasks, ensuring efficient performance in those applications.

Surface Mount: YES

Easy to mount onto circuit boards, saving space and making assembly more convenient.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on circuit boards.

Maximum Collector-Emitter Voltage: 65 V

Can handle higher voltage levels, making it suitable for a variety of applications.

Minimum DC Current Gain (hFE): 110

High gain value ensures reliable amplification of current.

Nominal Transition Frequency (fT): 100 MHz

High frequency capability enables fast switching speeds in applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC856S,125 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC856S,125 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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