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100 MHz Small Signal Bipolar Junction Transistors (BJT) 272

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC857BSQ-7-F by Diodes Incorporated

BC857BSQ-7-F

Diodes Incorporated

Diodes Inc. BC857BSQ-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 45V, max. collector current of 0.1A, and min. DC current gain of 220 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.

HIGH RELIABILITY

.1 A

45 V

SEPARATE, 2 ELEMENTS

220

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2SC2655L-Y-AP by Micro Commercial Components

2SC2655L-Y-AP

Micro Commercial Components

2SC2655L-Y-AP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 50V, and IC of 2A. It is commonly used in small signal applications due to its silicon element material and fT of 100MHz. The package style is cylindrical with through-hole terminals.

2 A

50 V

SINGLE

120

TO-92

O-PBCY-T3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

NO

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

BCX6825QTA by Diodes Incorporated

BCX6825QTA

Diodes Incorporated

BCX6825QTA by Diodes Inc. is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

HIGH RELIABILITY

COLLECTOR

1 A

20 V

SINGLE

60

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

BC847C-TP-HF by Micro Commercial Components

BC847C-TP-HF

Micro Commercial Components

BC847C-TP-HF by Micro Commercial Components is a NPN BJT with hFE of 420, VCE of 45V, and fT of 100MHz. Ideal for small signal applications in electronics due to its SILICON material, 0.1A IC, and GULL WING terminals for surface mount assembly.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

BCR523UE6327HTSA1 by Infineon Technologies

BCR523UE6327HTSA1

Infineon Technologies

Infineon's BCR523UE6327HTSA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications, it has a max operating temp of 150°C, VCE of 50V, and IC of 0.5A. With a fT of 100MHz, this transistor in small outline package suits high-frequency needs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.5 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR523UE6433HTMA1 by Infineon Technologies

BCR523UE6433HTMA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 10

.5 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

SMBTA06UPNE6327HTSA1 by Infineon Technologies

SMBTA06UPNE6327HTSA1

Infineon Technologies

SMBTA06UPNE6327HTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP configuration, 2 elements, and Gull Wing terminals. It operates up to 150°C with a max voltage of 80V and max current of 0.5A. Ideal for applications requiring high DC gain (hFE), such as amplification in small outline packages.

.5 A

80 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCX55E6327HTSA1 by Infineon Technologies

BCX55E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

COLLECTOR

1 A

60 V

SINGLE

40

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

BCP54E6327HTSA1 by Infineon Technologies

BCP54E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

1 A

45 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCR148E6327HTSA1 by Infineon Technologies

BCR148E6327HTSA1

Infineon Technologies

Infineon's BCR148E6327HTSA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and IC of 0.07A. With a max temp of 150°C, this silicon transistor in gull wing package is ideal for high-frequency switching circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR148E6433HTMA1 by Infineon Technologies

BCR148E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR521E6327HTSA1 by Infineon Technologies

BCR521E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX41E6433HTMA1 by Infineon Technologies

BCX41E6433HTMA1

Infineon Technologies

BCX41E6433HTMA1 by Infineon Technologies is a NPN BJT transistor with hFE of 40, VCE of 125V, and IC of 0.8A. It is used for switching applications in surface mount designs due to its small outline package style and high transition frequency of 100MHz.

.8 A

125 V

SINGLE

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX56E6327HTSA1 by Infineon Technologies

BCX56E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Moisture Sensitivity Level (MSL): 1;

COLLECTOR

1 A

80 V

SINGLE

40

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

SMBTA06E6433HTMA1 by Infineon Technologies

SMBTA06E6433HTMA1

Infineon Technologies

SMBTA06E6433HTMA1 by Infineon is a NPN BJT transistor with max. collector-emitter voltage of 80V, ideal for amplifier applications. Featuring a min. DC current gain of 100 and max. operating temp of 150°C, it has a small outline package style suitable for surface mount assembly with Gull Wing terminals.

.5 A

80 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BCR148SH6327XTSA1 by Infineon Technologies

BCR148SH6327XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCR48PNH6327XTSA1 by Infineon Technologies

BCR48PNH6327XTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO 1

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX5616E6327HTSA1 by Infineon Technologies

BCX5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6810E6327HTSA1 by Infineon Technologies

BCX6810E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

85

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6816E6327HTSA1 by Infineon Technologies

BCX6816E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6825E6327HTSA1 by Infineon Technologies

BCX6825E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BFN39E6327HTSA1 by Infineon Technologies

BFN39E6327HTSA1

Infineon Technologies

Infineon's BFN39E6327HTSA1 is a PNP BJT transistor with 300V VCE, 0.2A IC, and 100MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package design.

COLLECTOR

.2 A

300 V

SINGLE

30

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BSR43QTA by Diodes Incorporated

BSR43QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

1 A

80 V

SINGLE

50

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

1000 ns

250 ns

NTE159 by Nte Electronics

NTE159

Nte Electronics

NTE159 by Nte Electronics is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 30, and VCE of 80V. Ideal for switching applications due to its fast turn-on/off times (ton: 100ns, toff: 400ns) and high collector current (IC: 1A).

LOW NOISE

1 A

80 V

SINGLE

30

TO-92

O-PBCY-W3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.6 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

400 ns

100 ns

ZTX753STOA by Zetex Plc

ZTX753STOA

Zetex Plc

ZTX753STOA by Zetex Plc is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temp of 200°C, it's ideal for high-power switching circuits in various electronic devices.

2 A

30 pF

100 V

SINGLE

25

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

2.5 W

Not Qualified

CECC

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

100 MHz

.5 V

ZTX753STOB by Zetex Plc

ZTX753STOB

Zetex Plc

ZTX753STOB by Zetex Plc is a PNP BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 2A. With a max operating temperature of 200°C, it's ideal for high-power switching circuits in various electronic devices.

2 A

30 pF

100 V

SINGLE

25

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

2.5 W

Not Qualified

CECC

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

100 MHz

.5 V

ZTX795ASTOA by Zetex Plc

ZTX795ASTOA

Zetex Plc

ZTX795ASTOA by Zetex Plc is a PNP BJT transistor for switching applications. With VCEsat of 0.3V, hFE of 100, and IC of 0.5A, it operates at up to 200°C. Its silicon element and matte tin finish make it suitable for high-temperature environments requiring fast switching speeds up to 100MHz.

.5 A

140 V

SINGLE

100

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

100 MHz

.3 V

BC807-16-7 by Diodes Incorporated

BC807-16-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

60

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-25-7 by Diodes Incorporated

BC807-25-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

100

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-40-7 by Diodes Incorporated

BC807-40-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

.5 A

12 pF

45 V

SINGLE

170

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.31 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

2SB1181TL/Q by ROHM

2SB1181TL/Q

ROHM

ROHM's 2SB1181TL/Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications, it has a max operating temp of 150°C and can handle power dissipation up to 10W in a small outline package.

COLLECTOR

1 A

80 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

10 W

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

100 MHz

.4 V

FMMT619-TP by Micro Commercial Components

FMMT619-TP

Micro Commercial Components

FMMT619-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, VCE of 50V, and IC of 2A. Ideal for small outline applications requiring high transition frequency up to 100MHz in surface mount configurations.

2 A

50 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

MMSTA06T146 by ROHM

MMSTA06T146

ROHM

ROHM MMSTA06T146 is a NPN BJT transistor with VCEsat of 0.25V, hFE of 100, and IC of 0.5A. Ideal for amplifier applications due to its small outline package style and high transition frequency of 100MHz. Features gull wing terminals in a plastic/epoxy body for surface mount assembly.

.5 A

80 V

SINGLE

100

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

100 MHz

.25 V

BCX6825H6327XTSA1 by Infineon Technologies

BCX6825H6327XTSA1

Infineon Technologies

BCX6825H6327XTSA1 by Infineon is a NPN BJT transistor with 3W power dissipation, hFE of 160, and 20V collector-emitter voltage. It's used as an amplifier in applications requiring a small outline package style for surface mount assembly.

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

AEC-Q101

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC847BTT1 by Onsemi

BC847BTT1

Onsemi

BC847BTT1 by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150 °C, with Vce(max) of 45V.

.1 A

45 V

SINGLE

200

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC847CTT1 by Onsemi

BC847CTT1

Onsemi

BC847CTT1 by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and min DC current gain of 420. Ideal for amplifier applications, it operates at up to 150°C with a max collector-emitter voltage of 45V.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BC857BTT1 by Onsemi

BC857BTT1

Onsemi

BC857BTT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and transition frequency of 100MHz. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for various electronic designs.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.125 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

100 MHz

BFN19H6327XTSA1 by Infineon Technologies

BFN19H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

HBDM60V600W-7 by Diodes Incorporated

HBDM60V600W-7

Diodes Incorporated

Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.

.5 A

65 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

BC32725TAR by Fairchild Semiconductor

BC32725TAR

Fairchild Semiconductor

BC32725TAR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 45V and a max collector current of 0.8A. It has a min DC current gain of 100, making it suitable for switching applications up to 100MHz. The package style is cylindrical with a plastic/epoxy body material and matte tin terminal finish, featuring through-hole terminals in a round shape.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

KSA992PBU by Fairchild Semiconductor

KSA992PBU

Fairchild Semiconductor

Fairchild Semiconductor's KSA992PBU is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 200 and can handle a max collector current of 0.05A. With a max power dissipation of 0.5W and operating temperature up to 150°C, it is suitable for various electronic circuits requiring high gain and low power consumption.

LOW NOISE

.05 A

120 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

KSA992PTA by Fairchild Semiconductor

KSA992PTA

Fairchild Semiconductor

Fairchild Semiconductor's KSA992PTA is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. With a max power dissipation of 0.5W and max collector-emitter voltage of 120V, it operates at up to 150°C. Featuring a min hFE of 200 and fT of 100MHz, this transistor is housed in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.05 A

120 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

2PA1774R,135 by NXP Semiconductors

2PA1774R,135

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PC4617R,135 by NXP Semiconductors

2PC4617R,135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

180

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2PD601AQW,115 by NXP Semiconductors

2PD601AQW,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

.1 A

50 V

SINGLE

160

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BCX5610H6327XTSA1 by Infineon Technologies

BCX5610H6327XTSA1

Infineon Technologies

BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.

COLLECTOR

1 A

80 V

SINGLE

63

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

Other Transistors

YES

TIN

FLAT

SINGLE

40

AMPLIFIER

SILICON

100 MHz

2DB1386Q-13 by Diodes Incorporated

2DB1386Q-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .005 A;

COLLECTOR

.005 A

20 V

SINGLE

120

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

100 MHz