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BCR148E6327HTSA1

Infineon Technologies

BCR148E6327HTSA1 by Infineon Technologies

Infineon's BCR148E6327HTSA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and IC of 0.07A. With a max temp of 150°C, this silicon transistor in gull wing package is ideal for high-frequency switching circuits.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 15,000 parts In-Stock

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EBV Elektronik

Germany . 6,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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$0.234

3,000

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$0.234

Rochester

USA . 481 parts In-Stock

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$0.061

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$0.051

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$0.045

481

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$0.061

$0.051

$0.045

Distributors (In-Stock)

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Digiode

USA . 140 parts In-Stock

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$0.028

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140

$0.028

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Nova Conductors

Japan . 700 parts In-Stock

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$0.078

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700

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Chip Stock

USA . 33,500 parts In-Stock

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33,500

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Cyclops Electronics Ltd

UK . 27,772 parts In-Stock

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Euro-Tech

UK . 14,838 parts In-Stock

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Vyrian

USA . 8,926 parts In-Stock

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Component Sense

UK . 6,000 parts In-Stock

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$0.060

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$0.060

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VNN

France . 5,862 parts In-Stock

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Martec Srl

Italy . 5,830 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.041

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$0.041

NAC Semi

USA . 3,000 parts In-Stock

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$0.220

3,000

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$0.220

Distributors (Availability)

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Semicontronic

India . 10,014 parts In-Stock

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$0.025

100+ parts

$0.024

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$0.024

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10,014

$0.025

$0.024

$0.024

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Corphita

USA . 916 parts In-Stock

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$0.027

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916

$0.027

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Ampacity Inc.

Singapore . 12,951 parts In-Stock

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$0.056

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$0.056

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Argo Parts USA

USA . 2,372 parts In-Stock

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$0.078

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$0.076

2,372

$0.078

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$0.076

Continental Prestige Electronics

USA . 323 parts In-Stock

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$0.078

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$0.077

323

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$0.077

Microchip USA

USA . 2,350 parts In-Stock

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$0.308

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2,350

$0.308

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Aztec Data Supply Inc.

USA . 265 parts In-Stock

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$0.902

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265

$0.902

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Corohmni

South Africa . 240 parts In-Stock

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$1.243

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$1.243

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Modulus Dynamics

Lithuania . 1,394 parts In-Stock

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$1.391

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$1.335

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$1.280

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Eastek

USA . 270,000 parts In-Stock

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Perfect Parts

USA . 154,955 parts In-Stock

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RC Electronics

USA . 108,588 parts In-Stock

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$0.070

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 8,461 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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S.R.D Solutions

India . 4,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,034 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.077

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$0.074

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$0.073

1,000

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$0.077

$0.074

$0.073

Overview

Enhance your electronic projects with the BCR148E6327HTSA1 by Infineon Technologies, a top-tier manufacturer known for producing high-quality Small Signal Bipolar Junction Transistors. Perfect for switching applications, this NPN transistor with a built-in resistor offers unparalleled performance and reliability. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 100 MHz, this versatile component is essential for achieving optimal results in your designs. Experience the value and benefits that this product brings to the table, providing you with the competitive edge you need to stand out in the market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for small electronic devices.

Transistor Application: SWITCHING

With a specific application for switching, this transistor is optimized for fast on/off transitions, ensuring efficient performance in switching circuits.

Surface Mount: YES

Surface mount packaging allows for easier and more efficient assembly processes, making this transistor ideal for mass production.

Package Shape: RECTANGULAR

The rectangular shape of the package provides better spatial utilization on the PCB, making it suitable for compact designs.

No. of Terminals: 3

Having only 3 terminals simplifies the connection process and reduces the chances of errors during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for applications where size constraints are critical.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain ensures consistent and reliable amplification, making this transistor suitable for precision applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable operation in various environments, increasing the versatility of this transistor.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage rating, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable and long-lasting choice.

Maximum Collector Current (IC): 0.07 A

The high maximum collector current allows for handling higher currents, making this transistor suitable for power applications.

Terminal Finish: TIN

A tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection in various operating conditions.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and component placement, making it easier to integrate this transistor into existing designs.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR148E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR148E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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