Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
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BC847AQ-7-F
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
.1 A
45 V
SINGLE
110
R-PDSO-G3
e3
1
3
150 Cel
-65 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.35 W
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
30
SWITCHING
SILICON
300 MHz
BC848CQ-7-F
30 V
420
MMBT2222A-TP-HF
Micro Commercial Components
MMBT2222A-TP-HF by Micro Commercial Components is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.
.6 A
40 V
40
10
AMPLIFIER
285 ns
35 ns
MMBT2907A-TP-HF
MMBT2907A-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, DC current gain of 50, and power dissipation of 0.35W. With a small outline package style and surface mount capability, it operates at up to 150°C.
60 V
50
PNP
200 MHz
110 ns
50 ns
BCV46QTA
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
HIGH RELIABILITY
.5 A
DARLINGTON
2000
AEC-Q101
BC858BWT106
ROHM
ROHM BC858BWT106 is a PNP BJT with 30V VCEO, 0.1A IC, and 210 hFE. Ideal for small signal applications in electronics due to its 250MHz fT, Gull Wing terminals, and compact Small Outline package. With a max operating temp of 150°C, it's suitable for various surface mount designs.
210
e1
Not Qualified
TIN SILVER COPPER
250 MHz
MMST3904T146
ROHM MMST3904T146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.2A. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz). Suitable for surface mount designs in small outline packages.
.2 A
4 pF
250 ns
70 ns
.3 V
2N4125TFR
Fairchild Semiconductor
2N4125TFR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 30V and max current of 0.2A. It has a min DC current gain of 25, making it suitable for switching applications with a max power dissipation of 0.35W in cylindrical package style.
25
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BOTTOM
2N5089TFR
2N5089TFR by Fairchild Semiconductor is a NPN BJT with max. collector-emitter voltage of 25V, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. power dissipation of 0.35W in a cylindrical package with matte tin finish.
LOW NOISE
25 V
450
50 MHz
2N5089TF
2N5089TF by Fairchild Semiconductor is a NPN bipolar junction transistor with a min DC current gain of 450 and max collector-emitter voltage of 25V. It is commonly used in amplifier applications due to its high transition frequency of 50MHz, making it suitable for small signal amplification tasks. The package style is cylindrical with a terminal finish of matte tin, providing durability and reliability for through-hole mounting configurations.
2N4401,116
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
6.5 pF
80
.75 V
2N5551,116
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;
.3 A
6 pF
160 V
100 MHz
.2 V
2N5551,412
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BF240,112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
.025 A
67
150 MHz
PMBT5401,215
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .3 A;
150 V
TO-236AB
.5 V
BCX71JLT1
Onsemi
BCX71JLT1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a small outline package style, Gull Wing terminal form, and operates up to 150°C. Ideal for low-power applications requiring fast switching times in surface mount designs.
100
e0
235
Tin/Lead (Sn/Pb)
800 ns
150 ns
2N4125BU
2N4125BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at a max temp of 150°C with a max collector current of 0.2A.
2N4125TA
2N4125TA by Fairchild Semiconductor is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style with through-hole terminals.
2N5089TA
2N5089TA by Fairchild Semiconductor is a NPN BJT transistor with a max power dissipation of 0.35W and min hFE of 450, ideal for amplifier applications. It has a max VCE of 25V, IC of 0.1A, and fT of 50MHz. The package is cylindrical with matte tin finish and through-hole terminals.
2N5087BU
2N5087BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.
50 V
250
40 MHz
NUS2401SNT1
NUS2401SNT1 by Onsemi is a Small Signal BJT with NPN/PNP polarity, 50V VCE, and 0.2A IC. It's used for switching applications in complex configurations. The package is surface mountable with Gull Wing terminals and a max power dissipation of 0.35W.
BUILT IN BIAS RESISTORS
COMPLEX
150
R-PDSO-G6
6
NPN AND PNP
TIN LEAD
NUS2401SNT1G
NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.
2N3906RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
300 ns
2N5089RLRAG
2N5089RLRAG by Onsemi is a NPN BJT transistor with hFE of 400, VCE of 25V, and IC of 0.05A. Ideal for amplifier applications due to its high transition frequency of 50MHz and max power dissipation of 0.35W in a cylindrical package.
.05 A
400
MMBT3904_NL
MMBT3904_NL by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 0.2A, and min DC current gain of 30. With a small outline package style and surface mount capability, it operates b/w -55 to 150°C and has a transition frequency of 300MHz.
COLLECTOR
-55 Cel
MMBT3906_NL
MMBT3906_NL by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 40V and max collector current of 0.2A. With a transition frequency of 250MHz, it operates b/w -55 to 150°C, making it ideal for small outline packages in electronic devices.
MMBT2222AK
MMBT2222AK by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.35W, and max. collector-emitter voltage of 40V. It is used in small outline packages for applications requiring a DC current gain (hFE) of at least 40, operating temperatures up to 150°C, and a transition frequency (fT) of 300MHz.
MMBT3904K
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N4401G
2N4401G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
255 ns
BC237BRL1G
BC237BRL1G by Onsemi is a NPN BJT transistor with a max power dissipation of 0.35W and min DC current gain of 200, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, operating temperature up to 150°C, and nominal transition frequency of 200MHz in a cylindrical package.
EUROPEAN PART NUMBER
200
BC237BZL1G
BC237BZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V, ideal for amplifier applications. It has a min. DC current gain of 200 and max. operating temp of 150 °C, making it suitable for low-power circuits requiring high frequency response up to 200MHz. The package style is cylindrical with through-hole terminals, offering easy installation in various electronic devices.
2N3906RL1G
2N3906RL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its single configuration and cylindrical package style. Operating temp ranges from -55 °C to 150°C, making it versatile in various environments.
2N3906ZL1G
2N3906ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (70ns/300ns) and high transition frequency (250MHz).
2N4124G
2N4124G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 60, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.2A in a cylindrical package shape.
60
2N5087RLRAG
2N5087RLRAG by Onsemi is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.
2N5088G
2N5088G by Onsemi is a NPN BJT with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150°C in a cylindrical package with through-hole terminals.
350
2N5088RLRAG
2N5088RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150 °C in a cylindrical package style.
2N5550G
2N5550G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 20, and max. collector-emitter voltage of 140V. It is commonly used in amplifier applications due to its single configuration and cylindrical package style.
140 V
20
2N5551RLRAG
2N5551RLRMG
2N5551RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 160V, max. collector current of 0.6A, and min. DC current gain of 30. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance at up to 150 °C operating temperature.
BC182BG
BC182BG by Onsemi is a NPN BJT transistor with hFE of 180, ideal for amplifier applications. It has a max power dissipation of 0.35W and operates at up to 150 °C. With a max collector-emitter voltage of 50V and fT of 200MHz, it's suitable for various electronic designs.
180
BC237BG
BC237BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for amplifier applications. Featuring a min. DC current gain of 200 and nominal transition frequency of 200MHz, it comes in a cylindrical package with through-hole terminals for easy installation.
BC237CG
BC237CG by Onsemi is a NPN BJT transistor with hFE of 380, VCE of 45V, and fT of 200MHz. Ideal for amplifier applications due to its 0.35W power dissipation, it has a single configuration in a cylindrical package with through-hole terminals. Operating up to 150 °C, it is suitable for various electronic designs.
380
BC239CG
BC239CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 380 and can handle a max collector current of 0.1 A. With a max operating temperature of 150 °C, it offers a nominal transition frequency of 280 MHz.
280 MHz
2N5400RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
120 V
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