Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DDTA114ECAQ-13-F
Diodes Incorporated
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
.05 A
50 V
SINGLE WITH BUILT-IN RESISTOR
30
R-PDSO-G3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.2 W
AEC-Q101
BIP General Purpose Small Signal
YES
MATTE TIN
GULL WING
DUAL
SILICON
250 MHz
DDTA114ECAQ-7-F
DDTC123ECAQ-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
.1 A
20
NPN
DDTC124EUAQ-13-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;
.03 A
56
DTA123TET1G
Onsemi
DTA123TET1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 160. It is designed for switching applications, features a built-in resistor, and comes in a small outline package suitable for surface mount technology.
160
NOT SPECIFIED
.3 W
Matte Tin (Sn) - annealed
SWITCHING
DTA144TET1G
DTA144TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This surface-mount device comes in a small outline package with Gull Wing terminals.
BUILT IN BIAS RESISTOR
120
MMUN2140LT1G
MMUN2140LT1G by Onsemi is a PNP BJT with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 120. This surface-mount transistor comes in a small outline package with matte tin finish.
TO-236AB
.4 W
NSBC124XF3T5G
NSBC124XF3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has max. collector-emitter voltage of 50V, max. collector current of 0.1A, and min. DC current gain of 80 (hFE). This small outline transistor in plastic package is ideal for surface mount designs.
BUILT IN BIAS RESISTANCE RATIO IS 2.14
80
R-PDSO-F3
.297 W
BIP General Purpose Small Signals
FLAT
MUN5240T1G
MUN5240T1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with gull wing terminals is ideal for surface mount designs.
BUILT-IN BIAS RESISTOR
.31 W
BCR133WE6327HTSA1
Infineon Technologies
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
BUILT-IN BIAS RESISTOR RATIO IS 1
Not Qualified
40
130 MHz
BCR116E6433HTMA1
Infineon's BCR116E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 160MHz. This small outline transistor in plastic/epoxy package with gull wing terminals is ideal for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 10
70
160 MHz
BCR135E6433HTMA1
Infineon's BCR135E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 150MHz. Its Gull Wing terminals and small outline make it suitable for surface mount designs in various electronic circuits.
BUILT-IN BIAS RESISTOR RATIO IS 21.3636
150 MHz
BCR141E6433HTMA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50;
50
BCR142WE6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
BUILT-IN BIAS RESISTOR RATIO IS 2.1363
BCR148E6327HTSA1
Infineon's BCR148E6327HTSA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and IC of 0.07A. With a max temp of 150°C, this silicon transistor in gull wing package is ideal for high-frequency switching circuits.
.07 A
150 Cel
TIN
100 MHz
BCR148E6433HTMA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;
BCR158E6327HTSA1
Infineon BCR158E6327HTSA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
200 MHz
BCR162E6327HTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1;
BCR166E6327HTSA1
BCR166E6327HTSA1 by Infineon is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70 and can handle a max collector-emitter voltage of 50V. With a nominal transition frequency of 160MHz, this surface-mount transistor comes in a small outline package ideal for compact designs.
BCR166E6433HTMA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
BCR183E6433HTMA1
Infineon's BCR183E6433HTMA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BCR185E6327HTSA1
Infineon Technologies' BCR185E6327HTSA1 is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70, max collector-emitter voltage of 50V, and nominal transition frequency of 200MHz. This surface-mount transistor comes in a small outline package with gull wing terminals.
BUILT-IN BIAS RESISTOR RATIO IS 4.7
BCR185E6433HTMA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
BCR192E6327HTSA1
BCR521E6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
.5 A
DDTC115EUAQ-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;
.02 A
82
BCR112WH6327XTSA1
BCR112WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, DC current gain of 20, and max collector current of 0.1A. This surface mount transistor in small outline package is made of silicon and operates at a nominal transition frequency of 140MHz.
140 MHz
BCR116WH6327XTSA1
BCR116WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a hFE of 70, Vce(max) of 50V, and fT of 150MHz. This small outline transistor is surface mountable with Gull Wing terminals, ideal for compact electronic designs.
BUILT-IN BIAS RESISTOR RATIO 10
BCR119WH6327XTSA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120;
BCR158WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
BUILT-IN BIAS RESISTOR RATIO IS 21.36
BCR169WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
BCR191WH6327XTSA1
BCR191WH6327XTSA1 by Infineon Technologies is a PNP BJT with built-in resistor for switching applications. It has a hFE of 50, VCE of 50V, and fT of 200MHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BUILT-IN BIAS RESISTOR RATIO 1
BCR192WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT-IN BIAS RESISTOR RATIO IS 2.14
BCR573E6327HTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO 0.1;
BUILT-IN BIAS RESISTOR RATIO 0.1
DTD143ECT216
ROHM
ROHM DTD143ECT216 is a NPN BJT with VCEsat of 0.3V, hFE of 47, and IC of 0.5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 200MHz. Package: PLASTIC/EPOXY, RECTANGULAR shape with GULL WING terminals in SMALL OUTLINE style.
47
e1
Tin/Silver/Copper (Sn/Ag/Cu)
10
.3 V
RN6002
Toshiba
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 2 A;
COLLECTOR
2 A
30 V
R-PSSO-F3
e0
1 W
.5 W
TIN LEAD
SINGLE
120 MHz
.5 V
DTA114YCAT116
ROHM DTA114YCAT116 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.07A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, making it suitable for high-frequency operations up to 250MHz.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
68
DTA123ECAT116
ROHM DTA123ECAT116 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 20, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150°C, it offers a transition frequency of 250MHz for efficient performance.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
DTD143TKT146
ROHM DTD143TKT146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.5A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 200MHz.
40 V
100
TIN SILVER COPPER
DTA144EUAT106
ROHM DTA144EUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.
BUILT IN BIAS RESISTOR RATIO IS 1
DTC114TUAT106
ROHM DTC114TUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
DTC124XUAT106
ROHM DTC124XUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
DTC143EUA-T106
ROHM DTC143EUA-T106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it has a built-in resistor in a small outline package suitable for surface mount technology. Operating up to 150°C, it offers high performance in compact designs.
DTC363EUT106
ROHM DTC363EUT106 is a NPN BJT with built-in resistor for switching applications. Features include 0.2W power dissipation, 20V collector-emitter voltage, and 200MHz transition frequency. Ideal for surface mount designs requiring small outline packages.
.6 A
20 V
DTC114ESATP
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
R-PSIP-T3
IN-LINE
NO
THROUGH-HOLE
DTC143TSATP
ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.
DTA113ZETL
ROHM DTA113ZETL is a PNP BJT transistor with VCEsat of 0.3V, hFE of 33, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and transition frequency of 250MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
33
.15 W
DTA114EUA-T106
ROHM's DTA114EUA-T106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
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