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DTA123ECAT116

ROHM

DTA123ECAT116 by ROHM

ROHM DTA123ECAT116 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 20, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150°C, it offers a transition frequency of 250MHz for efficient performance.

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Overview

Unlocking a world of possibilities, the DTA123ECAT116 by ROHM is a game-changer in the realm of small signal bipolar junction transistors. Crafted with precision and expertise, this PNP configuration transistor with a built-in resistor offers unparalleled quality and performance in switching applications. With a low VCEsat of 0.3V and a minimum DC current gain of 20, this surface mount device ensures reliable operation even in demanding conditions. Experience seamless functionality and efficiency with ROHM's innovative technology, setting new standards in the industry. Elevate your projects with the DTA123ECAT116 and witness the difference it makes in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: PNP

Suitable for complementing NPN transistors in various circuit designs, allowing for versatile applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit designs by eliminating the need for external resistors, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Enables easy and secure mounting on PCBs, facilitating automated assembly processes and saving time during production.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in switching applications, making the transistor energy-efficient.

Package Shape: RECTANGULAR

Compact and space-saving design, ideal for applications where board space is limited.

Terminal Form: GULL WING

Facilitates reliable soldering connections and ensures a secure mechanical bond, enhancing the overall durability of the product.

No. of Terminals: 3

Simplified pin configuration for straightforward integration into circuit layouts, reducing the chance of wiring errors.

Package Style (Meter): SMALL OUTLINE

Small outline package saves board space, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 20

Reliable and consistent DC current gain ensures stable performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in a variety of environments, ensuring versatility and reliability.

Maximum Collector-Emitter Voltage: 50 V

Supports applications with higher voltage requirements, expanding the range of potential use cases for the transistor.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and electrical properties, enhancing the overall performance and reliability of the transistor.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for a wide range of switching and amplification applications.

Terminal Position: DUAL

Dual terminal configuration allows for easy and secure connections, ensuring stable performance in various circuit setups.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a specified duration, facilitating the soldering process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures reliable solder joints and robust mechanical connections.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA123ECAT116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA123ECAT116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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