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DTA114YCAT116

ROHM

DTA114YCAT116 by ROHM

ROHM DTA114YCAT116 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.07A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, making it suitable for high-frequency operations up to 250MHz.

Median Price

$0.051

Lifecycle Status

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6

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1k+

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Mouser Electronics

USA . 40 parts In-Stock

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$0.330

100+ parts

$0.083

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$0.066

10k+ parts

$0.046

40

$0.330

$0.083

$0.066

$0.046

Verical

USA . 2,940 parts In-Stock

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$0.073

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$0.071

2,940

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$0.071

RS (Exports)

UK . 200 parts In-Stock

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$0.029

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$0.018

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$0.017

200

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$0.029

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$0.017

Chip1Stop

Japan . 100 parts In-Stock

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$0.023

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ACDS - Activité Composants Distribution Service

France . 1,860 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 928 parts In-Stock

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$0.025

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928

$0.025

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CoreStaff

Japan . 2,940 parts In-Stock

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$0.095

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$0.044

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$0.038

2,940

$0.095

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$0.044

$0.038

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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iodParts Technologies Inc.

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Aranea Global

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Allen Electronics Distributors

USA . 300 parts In-Stock

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$0.098

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$0.059

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$0.056

300

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$0.098

$0.059

$0.056

Overview

Discover the cutting-edge DTA114YCAT116 by ROHM, a high-quality Small Signal Bipolar Junction Transistor with built-in resistor for seamless switching applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 68, this PNP transistor offers exceptional performance and reliability. Its compact design and surface-mount capability make it ideal for a wide range of electronic devices. Trust ROHM's renowned expertise in semiconductor manufacturing to bring you a product that delivers unmatched value and efficiency. Elevate your designs with the DTA114YCAT116 and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable casing for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Suitable for use in circuits where PNP transistors are required, providing versatility in design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by having a built-in resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such functions.

Surface Mount: YES

Allows for easy and compact integration onto PCBs, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.3 V

Low saturation voltage results in minimal power loss and heat generation, improving overall efficiency.

Package Shape: RECTANGULAR

Streamlined shape for compatibility with various PCB layouts and space-saving designs.

Terminal Form: GULL WING

Facilitates easy soldering and connection to PCB, ensuring a reliable electrical connection.

No. of Terminals: 3

Simple and straightforward pin configuration for easy integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact form factor ideal for applications with limited space constraints.

Maximum Power Dissipation Ambient: 0.2 W

Efficient power dissipation capability, ensuring stable operation under various ambient conditions.

Minimum DC Current Gain (hFE): 68

Consistent current gain ensures reliable and predictable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Wide temperature range for operation in diverse environments without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Adequate voltage rating for a wide range of applications, ensuring safe operation within specified limits.

Transistor Element Material: SILICON

High-performance silicon material for improved reliability and conduction efficiency.

Maximum Collector Current (IC): 0.07 A

Sufficient current-carrying capacity for various circuit requirements, ensuring performance under load.

Terminal Position: DUAL

Dual-terminal configuration for enhanced connectivity and easy integration into circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time ensures minimal thermal stress during assembly, enhancing product reliability.

Peak Reflow Temperature °C: 260

High reflow temperature tolerance for robust soldering processes and reliable connections.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast switching speeds and optimal performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA114YCAT116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA114YCAT116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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