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SINGLE WITH BUILT-IN RESISTOR Small Signal Bipolar Junction Transistors (BJT) 422

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PDTC123JE,115 by NXP Semiconductors

PDTC123JE,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

3.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.3 V

PDTC123JEF,115 by NXP Semiconductors

PDTC123JEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 21; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PDTC124EK,115 by NXP Semiconductors

PDTC124EK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC124ES,126 by NXP Semiconductors

PDTC124ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; JEDEC-95 Code: TO-92;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTC124XE,115 by NXP Semiconductors

PDTC124XE,115

NXP Semiconductors

The NXP Semiconductors PDTC124XE,115 is a NPN BJT with built-in resistor for switching applications. It has a low VCEsat of 0.3V and high hFE of 80, suitable for small outline packages. With a max collector-emitter voltage of 50V and collector current of 0.1A, it operates at up to 150°C ambient temperature.

BUILT-IN BIAS RESISTOR RATIO IS 2.14

.1 A

3.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.3 V

PDTC143EE,115 by NXP Semiconductors

PDTC143EE,115

NXP Semiconductors

The NXP Semiconductors PDTC143EE,115 is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 30. This small outline transistor operates up to 150°C and is surface mountable with a gull wing terminal form.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC143EK,115 by NXP Semiconductors

PDTC143EK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC143ES,126 by NXP Semiconductors

PDTC143ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Terminals: 3; Terminal Finish: TIN;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-92

R-PBCC-N3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NPN

Not Qualified

YES

TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

PDTC143XK,115 by NXP Semiconductors

PDTC143XK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC143ZK,115 by NXP Semiconductors

PDTC143ZK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 10; Minimum DC Current Gain (hFE): 100;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

3.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

100

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

.3 V

PDTC144EEF,115 by NXP Semiconductors

PDTC144EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PDTC144EK,115 by NXP Semiconductors

PDTC144EK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC144ES,126 by NXP Semiconductors

PDTC144ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

NSVDTC144TM3T5G by Onsemi

NSVDTC144TM3T5G

Onsemi

NSVDTC144TM3T5G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with matte tin finish is ideal for automotive electronics meeting AEC-Q101 standard.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.6 W

AEC-Q101

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DTC114EE-TP by Micro Commercial Components

DTC114EE-TP

Micro Commercial Components

DTC114EE-TP by Micro Commercial Components is a NPN BJT with built-in resistor for switching applications. It has a max power dissipation of 0.15W, hFE of 30, and fT of 250MHz. This surface mount transistor comes in a small outline package with matte tin finish and dual terminals.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

DTA115EET1 by Onsemi

DTA115EET1

Onsemi

DTA115EET1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor comes in a small outline package with gull wing terminals.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DTC115EET1 by Onsemi

DTC115EET1

Onsemi

DTC115EET1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This surface-mount device comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DTC144TT1 by Onsemi

DTC144TT1

Onsemi

DTC144TT1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This surface-mount transistor in a small outline package is ideal for compact electronic designs.

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

160

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DTC144WET1 by Onsemi

DTC144WET1

Onsemi

DTC144WET1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in gull wing package is ideal for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN LEAD

GULL WING

DUAL

30

SWITCHING

SILICON

MUN5237T1 by Onsemi

MUN5237T1

Onsemi

MUN5237T1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable for efficient assembly processes.

BUILT IN BIAS RESISTOR RATIO 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.31 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

DDTC114WUA-7 by Diodes Incorporated

DDTC114WUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC124XUA-7 by Diodes Incorporated

DDTC124XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.14

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143FUA-7 by Diodes Incorporated

DDTC143FUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 4.68

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143XUA-7 by Diodes Incorporated

DDTC143XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

250 MHz

DDTC123EUA-7 by Diodes Incorporated

DDTC123EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143EUA-7 by Diodes Incorporated

DDTC143EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC144EUA-7 by Diodes Incorporated

DDTC144EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA113ZCA-7 by Diodes Incorporated

DDTA113ZCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 33;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA113ZUA-7 by Diodes Incorporated

DDTA113ZUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114GCA-7 by Diodes Incorporated

DDTA114GCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114TCA-7 by Diodes Incorporated

DDTA114TCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114TUA-7 by Diodes Incorporated

DDTA114TUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114WCA-7 by Diodes Incorporated

DDTA114WCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114YCA-7 by Diodes Incorporated

DDTA114YCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Finish: Tin/Lead (Sn85Pb15);

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

Not Qualified

YES

Tin/Lead (Sn85Pb15)

GULL WING

DUAL

10

SILICON

250 MHz

DDTA114YUA-7 by Diodes Incorporated

DDTA114YUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123JCA-7 by Diodes Incorporated

DDTA123JCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123TUA-7 by Diodes Incorporated

DDTA123TUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123YUA-7 by Diodes Incorporated

DDTA123YUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 4.54

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA124TCA-7 by Diodes Incorporated

DDTA124TCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA143XCA-7 by Diodes Incorporated

DDTA143XCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 2.12

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA144VUA-7 by Diodes Incorporated

DDTA144VUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Moisture Sensitivity Level (MSL): 1;

BUILT-IN BIAS RESISTOR RATIO IS 0.21

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA144WCA-7 by Diodes Incorporated

DDTA144WCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Minimum DC Current Gain (hFE): 56;

BUILT-IN BIAS RESISTOR RATIO IS 0.46

.03 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC113TCA-7 by Diodes Incorporated

DDTC113TCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC113ZCA-7 by Diodes Incorporated

DDTC113ZCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114ECA-7 by Diodes Incorporated

DDTC114ECA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 1

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114GCA-7 by Diodes Incorporated

DDTC114GCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114TCA-7 by Diodes Incorporated

DDTC114TCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114WCA-7 by Diodes Incorporated

DDTC114WCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz