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PDTC124XE,115

NXP Semiconductors

PDTC124XE,115 by NXP Semiconductors

The NXP Semiconductors PDTC124XE,115 is a NPN BJT with built-in resistor for switching applications. It has a low VCEsat of 0.3V and high hFE of 80, suitable for small outline packages. With a max collector-emitter voltage of 50V and collector current of 0.1A, it operates at up to 150°C ambient temperature.

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1k+

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Digiode

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Nova Conductors

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900

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361

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Microchip USA

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Advanced Electronics

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$1.092

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$0.994

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$0.895

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AZTECH Wire

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One Stop Electronics

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Overview

Experience seamless performance and reliability with the NXP Semiconductors PDTC124XE,115 Small Signal Bipolar Junction Transistor. Designed for switching applications, this NPN transistor offers a maximum VCEsat of 0.3V and a minimum DC current gain of 80. With a compact rectangular package style and gull wing terminal form, this transistor is easy to install and delivers outstanding performance. Trust in NXP Semiconductors' reputation for quality and innovation, and elevate your electronic projects with the PDTC124XE,115.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

The NPN configuration allows for high current flow and efficient switching capabilities.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

The surface mount feature makes it easy to integrate into compact electronic devices.

Maximum VCEsat: 0.3 V

The low VCEsat value minimizes power losses and increases efficiency in operation.

Package Shape: RECTANGULAR

The rectangular shape is convenient for placement on the PCB and allows for compact circuit designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in a circuit without the need for complex wiring.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation enhances the reliability and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact devices.

Maximum Power Dissipation Ambient: 0.15 W

With a low ambient power dissipation, this transistor operates efficiently in various conditions.

Minimum DC Current Gain (hFE): 80

The high minimum DC current gain ensures stable and consistent performance in different operating conditions.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for versatility in various environments and applications.

Maximum Collector-Base Capacitance: 3.5 pF

The low collector-base capacitance minimizes signal distortion and improves overall performance.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating makes this transistor suitable for a wide range of voltage applications.

Transistor Element Material: SILICON

The silicon element material provides reliable and stable transistor performance.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows for handling moderate to high power levels.

Terminal Finish: TIN

The tin terminal finish enhances solderability and ensures a secure connection.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time ensures quick and efficient assembly processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable soldering and assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC124XE,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.14

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.3 V

Trade Compliance

PDTC124XE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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