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PDTC143EE,115

NXP Semiconductors

PDTC143EE,115 by NXP Semiconductors

The NXP Semiconductors PDTC143EE,115 is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 30. This small outline transistor operates up to 150°C and is surface mountable with a gull wing terminal form.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 61,535 parts In-Stock

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Verical

USA . 61,535 parts In-Stock

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$0.035

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Rochester

USA . 5,008 parts In-Stock

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$0.066

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$0.055

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$0.049

5,008

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$0.066

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$0.049

Chip1Stop

Japan . 5 parts In-Stock

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$0.020

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Digiode

USA . 2,697 parts In-Stock

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Bristol Electronics

USA . 42,000 parts In-Stock

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$0.094

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$0.037

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$0.023

42,000

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$0.023

Chip Stock

USA . 119,000 parts In-Stock

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Dan-Mar Components

USA . 42,000 parts In-Stock

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Microfarads

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Vyrian

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Anansix

USA . 1,625 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,001 parts In-Stock

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Corphita

USA . 3,503 parts In-Stock

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AZTECH Wire

Italy . 926 parts In-Stock

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iodParts Technologies Inc.

India . 27,000 parts In-Stock

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Continental Prestige Electronics

USA . 14,364 parts In-Stock

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$0.026

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Lixinc

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UNI Independent Distributors

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Microchip USA

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Kepictronics

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Overview

Enhance your electronic projects with the NXP Semiconductors PDTC143EE,115 Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this NPN transistor with a built-in resistor is perfect for switching applications. Designed for efficiency and reliability, this rectangular-shaped transistor offers a maximum collector-emitter voltage of 50V and a DC current gain of 30. With a compact package style and gull wing terminal form, this high-quality product ensures optimal performance in a wide range of electronic devices. Upgrade your designs today with the PDTC143EE,115 and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications and offer high efficiency.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and high efficiency.

Surface Mount: YES

Surface mount packaging allows for easy automated assembly and compact PCB layout.

Maximum Power Dissipation (Abs): 0.15 W

The high power dissipation capability allows the transistor to handle higher loads without overheating.

Minimum DC Current Gain (hFE): 30

High DC current gain ensures reliable amplification and switching performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in a variety of environments and applications.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage circuits, offering good voltage handling capability.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows the transistor to handle higher current loads.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC143EE,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTC143EE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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