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SINGLE WITH BUILT-IN RESISTOR Small Signal Bipolar Junction Transistors (BJT) 422

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DTA123JUA-T106 by ROHM

DTA123JUA-T106

ROHM

ROHM's DTA123JUA-T106 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers efficient performance in compact designs.

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

.3 V

DTC114GUAT106 by ROHM

DTC114GUAT106

ROHM

ROHM DTC114GUAT106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

.3 V

NSVMMUN2113LT3G by Onsemi

NSVMMUN2113LT3G

Onsemi

NSVMMUN2113LT3G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and built-in resistor configuration. Operating temperature range from -55 to 150 °C ensures reliable performance in various environments.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.4 W

AEC-Q101

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

.25 V

DTA114TMT2L by ROHM

DTA114TMT2L

ROHM

ROHM's DTA114TMT2L is a PNP BJT with built-in resistor for switching applications. Features include 100 min hFE, 50V VCEO, and 250MHz fT. Its small outline package and surface mount capability make it ideal for compact electronic designs.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

DTC123EMT2L by ROHM

DTC123EMT2L

ROHM

ROHM's DTC123EMT2L is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and nominal transition frequency of 250MHz. Ideal for surface mount designs in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

DDTC113TLP-7 by Diodes Incorporated

DDTC113TLP-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR, HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

250 MHz

PDTA114TEF,115 by NXP Semiconductors

PDTA114TEF,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 50 V;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

200

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTA115EE,115 by NXP Semiconductors

PDTA115EE,115

NXP Semiconductors

PDTA115EE,115 by NXP Semiconductors is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.02A, and power dissipation of 0.15W. This surface-mount transistor operates at up to 150°C and comes in a small outline package suitable for various electronic devices.

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA123EE,115 by NXP Semiconductors

PDTA123EE,115

NXP Semiconductors

NXP Semiconductors' PDTA123EE,115 is a PNP BJT with 50V VCE, 0.1A IC, and 30 hFE. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and built-in resistor. Operating up to 150°C, it's suitable for surface mount designs requiring compact components.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA123JK,115 by NXP Semiconductors

PDTA123JK,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA123TE,115 by NXP Semiconductors

PDTA123TE,115

NXP Semiconductors

NXP Semiconductors' PDTA123TE,115 is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 30. The package is surface mountable with gull wing terminals in a small outline shape.

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA124TE,115 by NXP Semiconductors

PDTA124TE,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA143EEF,115 by NXP Semiconductors

PDTA143EEF,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTA143TE,115 by NXP Semiconductors

PDTA143TE,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA143ZEF,115 by NXP Semiconductors

PDTA143ZEF,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 10; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA144TE,115 by NXP Semiconductors

PDTA144TE,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA144VE,115 by NXP Semiconductors

PDTA144VE,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTOR RATIO IS 0.21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTA144WE,115 by NXP Semiconductors

PDTA144WE,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC114TEF,115 by NXP Semiconductors

PDTC114TEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

200

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC114YEF,115 by NXP Semiconductors

PDTC114YEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC115EEF,115 by NXP Semiconductors

PDTC115EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .02 A; JESD-30 Code: R-PDSO-F3; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC123EE,115 by NXP Semiconductors

PDTC123EE,115

NXP Semiconductors

PDTC123EE,115 by NXP Semiconductors is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. This small outline transistor operates at temperatures up to 150°C, making it suitable for various electronic devices.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC123EEF,115 by NXP Semiconductors

PDTC123EEF,115

NXP Semiconductors

NXP Semiconductors' PDTC123EEF,115 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC123YE,115 by NXP Semiconductors

PDTC123YE,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT IN BIAS RESISTOR RATIO IS 4.5

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

35

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC123YK,115 by NXP Semiconductors

PDTC123YK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTOR RATIO IS 4.5

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

35

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC124TE,115 by NXP Semiconductors

PDTC124TE,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC143EEF,115 by NXP Semiconductors

PDTC143EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC143TE,115 by NXP Semiconductors

PDTC143TE,115

NXP Semiconductors

NXP Semiconductors' PDTC143TE,115 is a NPN BJT transistor with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.1A max collector current, and 200 min DC current gain. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC143XEF,115 by NXP Semiconductors

PDTC143XEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC143ZEF,115 by NXP Semiconductors

PDTC143ZEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC144TE,115 by NXP Semiconductors

PDTC144TE,115

NXP Semiconductors

The NXP Semiconductors PDTC144TE,115 is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 100. This small outline transistor operates up to 150°C and is surface mountable with Gull Wing terminals.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC144WE,115 by NXP Semiconductors

PDTC144WE,115

NXP Semiconductors

NXP Semiconductors' PDTC144WE,115 is a NPN BJT with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.1A max collector current, and 150°C max operating temperature. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DTC124EEBTL by ROHM

DTC124EEBTL

ROHM

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-F3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

PDTA114EK,115 by NXP Semiconductors

PDTA114EK,115

NXP Semiconductors

NXP Semiconductors' PDTA114EK,115 is a PNP BJT transistor with built-in resistor for switching applications. It has hFE of 30, VCE of 50V, and IC of 0.1A. The package is surface mountable with Gull Wing terminals in a small outline shape.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA114TS,126 by NXP Semiconductors

PDTA114TS,126

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Package Style (Meter): CYLINDRICAL; Peak Reflow Temperature (C): NOT SPECIFIED;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTA124EK,115 by NXP Semiconductors

PDTA124EK,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Terminals: 3; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA124ES,126 by NXP Semiconductors

PDTA124ES,126

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Package Shape: ROUND; JEDEC-95 Code: TO-92;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTA143EK,115 by NXP Semiconductors

PDTA143EK,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; Minimum DC Current Gain (hFE): 30;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA143XK,115 by NXP Semiconductors

PDTA143XK,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 40;

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

TO-236AB

R-PDSO-G3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

40

SWITCHING

SILICON

PDTA143ZK,115 by NXP Semiconductors

PDTA143ZK,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

100

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

.3 V

PDTA144EEF,115 by NXP Semiconductors

PDTA144EEF,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Terminals: 3; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PDTA144EK,115 by NXP Semiconductors

PDTA144EK,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA144EK,135 by NXP Semiconductors

PDTA144EK,135

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTA144ES,126 by NXP Semiconductors

PDTA144ES,126

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTC114EEF,115 by NXP Semiconductors

PDTC114EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PDTC114EK,135 by NXP Semiconductors

PDTC114EK,135

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC114ES,126 by NXP Semiconductors

PDTC114ES,126

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

PDTC115EE,115 by NXP Semiconductors

PDTC115EE,115

NXP Semiconductors

NXP Semiconductors' PDTC115EE,115 is a NPN BJT with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.02A max collector current, and 80 min DC current gain. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON