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PDTA114EK,115

NXP Semiconductors

PDTA114EK,115 by NXP Semiconductors

NXP Semiconductors' PDTA114EK,115 is a PNP BJT transistor with built-in resistor for switching applications. It has hFE of 30, VCE of 50V, and IC of 0.1A. The package is surface mountable with Gull Wing terminals in a small outline shape.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 677,973 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

677,973

-

$0.066

$0.055

$0.049

Verical

USA . 141,373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

141,373

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 552 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

10k+ parts

-

552

$0.031

-

-

-

Vyrian

USA . 7,047 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,047

-

-

-

-

Anansix

USA . 561 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

561

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 279 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

-

279

$0.030

-

-

-

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.062

100+ parts

$0.966

1k+ parts

$0.871

10k+ parts

-

200

$1.062

$0.966

$0.871

-

AZTECH Wire

Italy . 331 parts In-Stock

1+ parts

$18.860

100+ parts

-

1k+ parts

-

10k+ parts

-

331

$18.860

-

-

-

Continental Prestige Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

30,000

-

-

-

$0.039

QUARKTWIN TECHNOLOGY LTD

USA . 27,087 parts In-Stock

1+ parts

-

100+ parts

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27,087

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UNI Independent Distributors

Spain . 5,763 parts In-Stock

1+ parts

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5,763

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Overview

Discover the PDTA114EK,115 by NXP Semiconductors, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a PNP configuration and built-in resistor, this transistor offers superior performance and reliability. Ideal for a wide range of electronic projects, this product features a compact design with gull wing terminals for easy installation. Trust NXP Semiconductors for cutting-edge technology and exceptional value. Upgrade your projects today with the PDTA114EK,115 and experience the difference it can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are ideal for switching applications and can handle both low and high power applications effectively.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and saves space on the PCB, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance and efficiency in electronic circuits.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB and facilitates space-saving design.

Terminal Form: GULL WING

Gull wing terminals provide secure solder joints, improving the reliability and longevity of the transistor.

No. of Terminals: 3

Simplifies the circuit layout and reduces the chances of errors in connection, enhancing the overall circuit performance.

Package Style (Meter): SMALL OUTLINE

Small outline package style ensures compatibility with various PCB designs and applications requiring compact components.

Minimum DC Current Gain (hFE): 30

With a minimum gain of 30, this transistor provides consistent and stable amplification in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Handles up to 50V, making it suitable for a wide range of voltage requirements in different electronic applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring long-term functionality of the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1A of collector current, suitable for low power applications and switching circuits.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability, ensuring secure connections for stable performance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and layout, accommodating different PCB configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA114EK,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTA114EK,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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