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PNP Power Bipolar Junction Transistors (BJT) 200

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX718STOA by Diodes Incorporated

ZTX718STOA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STOB by Diodes Incorporated

ZTX718STOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1.5 W

NO

WIRE

SINGLE

SILICON

180 MHz

.26 V

ZTX718STZ by Diodes Incorporated

ZTX718STZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2.5 A;

2.5 A

30 pF

20 V

SINGLE

15

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

180 MHz

.26 V

2SD1803T-TL-E by Onsemi

2SD1803T-TL-E

Onsemi

2SD1803T-TL-E by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 5A. It is commonly used for switching applications due to its low VCEsat of 0.55V and high transition frequency of 130MHz.

COLLECTOR

5 A

60 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

20 W

Other Transistors

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

.55 V

FZT560QTC by Diodes Incorporated

FZT560QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Maximum Collector-Emitter Voltage: 500 V;

COLLECTOR

.15 A

500 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

60 MHz

BCP5316TA by Diodes Incorporated

BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

ST26025A by STMicroelectronics

ST26025A

STMicroelectronics

ST26025A by STMicroelectronics is a PNP BJT with Darlington configuration, ideal for switching applications. It offers a max power dissipation of 160W, hFE of 200, and max collector current of 20A. With a max operating temp of 200 °C and VCE of 100V, it's suitable for high-power electronic systems.

BUILT IN BIAS RESISTANCE RATIO IS 0.01

COLLECTOR

20 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

160 W

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

FZT751QTC by Diodes Incorporated

FZT751QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

NJVMJD32CG by Onsemi

NJVMJD32CG

Onsemi

NJVMJD32CG by Onsemi is a PNP BJT with 15W power dissipation, 3A collector current, and 150°C max operating temp. Ideal for automotive applications due to AEC-Q101 standard compliance and 3MHz transition frequency.

3 A

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

3 MHz

NJVMJD45H11RLG by Onsemi

NJVMJD45H11RLG

Onsemi

NJVMJD45H11RLG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

ZX5T953GQTA by Diodes Incorporated

ZX5T953GQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;

HIGH RELIABILITY

COLLECTOR

5 A

100 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

2STD2360T4 by STMicroelectronics

2STD2360T4

STMicroelectronics

2STD2360T4 by STMicroelectronics is a PNP BJT transistor for switching applications. With 3A max collector current, 60V max collector-emitter voltage, and 15W max power dissipation, it operates at up to 150 °C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

2STN2340 by STMicroelectronics

2STN2340

STMicroelectronics

2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.

COLLECTOR

3 A

40 V

SINGLE

180

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BD652-S by Bourns

BD652-S

Bourns

The Bourns BD652-S is a PNP Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.

COLLECTOR

8 A

120 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

FZT951QTC by Diodes Incorporated

FZT951QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY

COLLECTOR

5 A

60 V

SINGLE

10

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

120 MHz

FZT953QTA by Diodes Incorporated

FZT953QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

COLLECTOR

5 A

100 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

125 MHz

BD438TG by Onsemi

BD438TG

Onsemi

The Onsemi BD438TG is a PNP BJT with max power dissipation of 36W, hFE of 85, and IC of 4A. Ideal for applications requiring high-power amplification in temperature range -55 to 150°C. Suitable for single configuration setups needing reliable performance with fT of 3MHz.

4 A

SINGLE

85

e3

1

150 Cel

-55 Cel

PNP

36 W

Other Transistors

NO

MATTE TIN

3 MHz

FZT749QTA by Diodes Incorporated

FZT749QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

FZT749QTC by Diodes Incorporated

FZT749QTC

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

100 pF

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

160 MHz

.6 V

2SD1803T-H by Onsemi

2SD1803T-H

Onsemi

The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.

COLLECTOR

5 A

60 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

130 MHz

.55 V

BCP6925E6327HTSA1 by Infineon Technologies

BCP6925E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: DUAL;

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCX5216E6327HTSA1 by Infineon Technologies

BCX5216E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH: 1000

COLLECTOR

1 A

60 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

2 W

AEC-Q101

YES

FLAT

SINGLE

AMPLIFIER

SILICON

125 MHz

.5 V

2SA2012-TD-E by Onsemi

2SA2012-TD-E

Onsemi

2SA2012-TD-E by Onsemi is a PNP BJT transistor for switching applications. With hFE of 200, it can handle up to 5A collector current and 3.5W power dissipation. Operating at max 150 °C, this transistor has a fT of 350MHz making it suitable for high-frequency applications.

COLLECTOR

5 A

30 V

SINGLE

200

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3.5 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

FLAT

SINGLE

30

SWITCHING

SILICON

350 MHz

2SB1302T-TD-E by Onsemi

2SB1302T-TD-E

Onsemi

Onsemi's 2SB1302T-TD-E is a PNP BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 5A. With a min. DC current gain of 60, it's ideal for switching applications in small outline packages at up to 150 °C operating temperature.

COLLECTOR

5 A

20 V

SINGLE

60

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.3 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

FLAT

SINGLE

30

SWITCHING

SILICON

320 MHz

BDX54CS by Motorola

BDX54CS

Motorola

Motorola's BDX54CS is a PNP power BJT with a Darlington configuration. It has a max collector-emitter voltage of 100V and max collector current of 8A, making it ideal for switching applications. With a min hFE of 750, this transistor is designed for high-performance in various electronic circuits.

COLLECTOR

8 A

100 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP42AS by Motorola

TIP42AS

Motorola

Motorola TIP42AS is a PNP BJT transistor with 60V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. Package style is flange mount with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42CN by Motorola

TIP42CN

Motorola

Motorola's TIP42CN is a PNP power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

ZTX953STZ by Zetex Plc

ZTX953STZ

Zetex Plc

ZTX953STZ by Zetex Plc is a PNP power BJT transistor with a max VCEsat of 0.33V and a max collector current of 3.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 30 and low collector-emitter voltage (VCE).

3.5 A

100 V

SINGLE

30

R-PSIP-W3

e3

1

1

3

200 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

Not Qualified

NO

MATTE TIN

WIRE

SINGLE

10

SWITCHING

SILICON

125 MHz

.33 V

NTE2322 by Nte Electronics

NTE2322

Nte Electronics

NTE2322 by Nte Electronics is a PNP BJT with 4 elements, ideal for amplifier applications. Features include hFE of 30, VCE of 40V, and fT of 200MHz. The package style is in-line with 14 terminals in a rectangular shape for through-hole mounting.

.6 A

40 V

SEPARATE, 4 ELEMENTS

30

R-PDIP-T14

4

14

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

Not Qualified

NO

THROUGH-HOLE

DUAL

AMPLIFIER

SILICON

200 MHz

NTE378 by Nte Electronics

NTE378

Nte Electronics

NTE378 by Nte Electronics is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications due to its high hFE of 40 and fT of 40MHz. The package style is flange mount with through-hole terminals.

COLLECTOR

10 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

40 MHz

BCP53QTA by Diodes Incorporated

BCP53QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5316QTA by Diodes Incorporated

BCP5316QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

SGSD200 by STMicroelectronics

SGSD200

STMicroelectronics

SGSD200 by STMicroelectronics is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3.5V, hFE of 300, and can handle up to 25A collector current. With a max power dissipation of 130W and operating temperature of 150 °C, it is suitable for high-power electronic circuits.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3.5 V

PCP1103-TD-H by Onsemi

PCP1103-TD-H

Onsemi

PCP1103-TD-H by Onsemi is a PNP BJT transistor with 3 terminals, capable of handling up to 1.5A collector current and 30V collector-emitter voltage. With a min hFE of 200, it's ideal for switching applications at temperatures up to 150 °C. This surface-mount transistor has a small outline package style suitable for high-frequency operations up to 450MHz.

COLLECTOR

1.5 A

30 V

SINGLE

200

TO-243

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3.5 W

Other Transistors

YES

TIN BISMUTH

FLAT

SINGLE

30

SWITCHING

SILICON

450 MHz

NTE248 by Nte Electronics

NTE248

Nte Electronics

NTE248 by Nte Electronics is a PNP BJT with 150W power dissipation, 100V max collector-emitter voltage, and 12A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and metal body material.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

100

TO-3

O-MBFM-P2

1

2

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

150 W

150 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

AMPLIFIER

SILICON

MJW0302AG by Onsemi

MJW0302AG

Onsemi

The Onsemi MJW0302AG is a PNP BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

15 A

260 V

SINGLE

75

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL21193DG by Onsemi

NJL21193DG

Onsemi

NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.

16 A

250 V

SINGLE WITH BUILT-IN DIODE

8

R-PSFM-T5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

TIP42G by Onsemi

TIP42G

Onsemi

TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

6 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

2STF2220 by STMicroelectronics

2STF2220

STMicroelectronics

2STF2220 by STMicroelectronics is a PNP BJT transistor with 1.4W power dissipation, hFE of 75, and 20V VCE. Ideal for switching applications in small outline packages, operating up to 150 °C. Suitable for surface mount designs requiring high collector current of 1.5A.

COLLECTOR

1.5 A

20 V

SINGLE

75

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

1.4 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

NJL0302DG by Onsemi

NJL0302DG

Onsemi

NJL0302DG by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration with built-in diode and high collector current of 15A.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

75

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

180 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL4302DG by Onsemi

NJL4302DG

Onsemi

NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.

HIGH RELIABILITY

15 A

350 V

SINGLE WITH BUILT-IN DIODE

10

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

200 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz

2STW1695 by STMicroelectronics

2STW1695

STMicroelectronics

2STW1695 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 100 W, operates up to 150 °C, and supports collector-emitter voltages of 140 V. Ideal for high-performance electronic circuits.

10 A

140 V

SINGLE

50

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

100 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz

MJD117RLG by Onsemi

MJD117RLG

Onsemi

MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).

COLLECTOR

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

25 MHz

2STN2360 by STMicroelectronics

2STN2360

STMicroelectronics

2STN2360 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.6 W, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

COLLECTOR

3 A

60 V

SINGLE

80

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

STD826T4 by STMicroelectronics

STD826T4

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

3 A

30 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

2STA1694 by STMicroelectronics

2STA1694

STMicroelectronics

2STA1694 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Its robust design ensures reliable performance in various electronic circuits.

8 A

120 V

SINGLE

70

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

80 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

20 MHz

2STA2120 by STMicroelectronics

2STA2120

STMicroelectronics

2STA2120 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STF2340 by STMicroelectronics

2STF2340

STMicroelectronics

2STF2340 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 1.4 W, a collector current of 3 A, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

40 V

SINGLE

200

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz