Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STGD3NB60SD-1
STMicroelectronics
STGD3NB60SD-1 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 3A IC, and 48W Pd. It operates up to 175 °C making it ideal for power applications requiring high voltage switching in surface mount designs.
3 A
600 V
4.5 V
20 V
e3
1
175 Cel
260
N-CHANNEL
48 W
Insulated Gate BIP Transistors
YES
MATTE TIN
30
STGF14N60D
STGF14N60D by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 11A IC, and 33W Pd. It operates up to 175 °C making it ideal for power electronics applications requiring high voltage and current handling capabilities.
11 A
6.5 V
33 W
NO
STGP14N60D
STMicroelectronics' STGP14N60D is an N-CHANNEL IGBT with 600V VCE, 25A IC, and 95W Ptot. It operates up to 175 °C making it ideal for high-power applications in industrial electronics and motor control systems.
25 A
95 W
TIG066SS-TL-E
Onsemi
TIG066SS-TL-E by Onsemi is an N-CHANNEL IGBT with 400V max collector-emitter voltage, 6V max gate-emitter voltage, and 150 °C max operating temperature. It is surface mountable and has a tin/bismuth terminal finish. Ideal for power electronics applications requiring high-voltage switching capabilities.
400 V
1 V
6 V
e6
150 Cel
Tin/Bismuth (Sn/Bi)
TIG052TS-TL-E
TIG052TS-TL-E by Onsemi is an N-CHANNEL IGBT suitable for surface mount applications. With a max operating temp of 150 °C, it offers a Vce of 400V and Vge of 6V. Ideal for power electronics in various industries due to its high voltage capabilities and compact design.
AOT10B60D
Alpha & Omega Semiconductor
AOT10B60D by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with 600V VCE, 20A IC, and 163W Pd. It operates up to 175°C making it ideal for high-power applications in industries like automotive, renewable energy, and industrial automation.
20 A
163 W
AOK30B60D1
AOK30B60D1 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with 208W power dissipation, 150°C max temp, and 600V collector-emitter voltage. Ideal for high-power applications requiring up to 60A collector current like motor drives and inverters.
60 A
208 W
NGTB15N135IHRWG
NGTB15N135IHRWG by Onsemi is an N-CHANNEL IGBT with 357W power dissipation, 175 °C max temp, and 1350V collector-emitter voltage. Ideal for high-power applications like industrial motor drives and renewable energy systems due to its 30A collector current capability and 20V gate-emitter voltage.
30 A
1350 V
357 W
Matte Tin (Sn) - annealed
GT20J341,S4X(S
Toshiba
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V;
25 V
45 W
STGDL6NC60DIT4
STGDL6NC60DIT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 50W max power dissipation. Ideal for power control applications due to its fast turn-off time of 122ns and built-in diode configuration.
13 A
SINGLE WITH BUILT-IN DIODE
5.75 V
TO-252
R-PSSO-G2
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
50 W
Not Qualified
GULL WING
SINGLE
POWER CONTROL
SILICON
122 ns
10.5 ns
STGPL6NC60DI
STGPL6NC60DI by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 14A IC, and 56W Ptot. It features a built-in diode for power control applications. The transistor has a toff of 122ns and ton of 10.5ns, making it suitable for high-speed switching operations in various industrial systems.
14 A
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
56 W
THROUGH-HOLE
FD600R06ME3_B11_S2
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 600 V; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;
ISOLATED
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
UNSPECIFIED
UPPER
960 ns
275 ns
FS100R17KS4F
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
100 A
1700 V
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X23
6
23
960 W
515 ns
141 ns
4.7 V
IKD03N60RF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 600 V;
COLLECTOR
5 A
5.7 V
53.6 W
TIN
265 ns
18 ns
IKD04N60RF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING;
8 A
75 W
216 ns
STGW50H60DF
STGW50H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 100A max collector current. It has a built-in diode, 285ns turn-off time, and 360W power dissipation. Ideal for power control applications requiring high efficiency and reliability in a flange mount package.
TO-247
360 W
Matte Tin (Sn)
285 ns
91 ns
STGW60H65F
STGW60H65F by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It's used for POWER CONTROL applications due to its fast turn-off time of 265ns and high operating temperature of 150 °C. The transistor comes in a RECTANGULAR package with THROUGH-HOLE terminals.
120 A
650 V
96 ns
STGWA60NC60WDR
STGWA60NC60WDR by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 130A max collector current, and 340W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 343ns.
130 A
340 W
343 ns
69 ns
FD1200R17HP4-K_B2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6500 W; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PUFM-X7;
6.4 V
R-PUFM-X7
7
-40 Cel
6500 W
UL APPROVED
1800 ns
900 ns
2.25 V
STGD8NC60KT4
STGD8NC60KT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 15A IC, and 62W power dissipation. Suitable for surface mount applications, it operates up to 150 °C making it ideal for high-power electronic systems.
15 A
62 W
NGTB15N120IHLWG
NGTB15N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It has a nominal turn off time of 440ns, making it suitable for power control applications requiring high voltage handling and fast switching capabilities. The transistor's package style is flange mount with through-hole terminals, ideal for applications where efficient heat dissipation is crucial.
1200 V
156 W
440 ns
NGTB15N60S1EG
NGTB15N60S1EG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 30A IC, and 117W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode, 440ns toff, and 93ns ton. Package: PLASTIC/EPOXY, Through-Hole terminals, Flange Mount style.
117 W
MOTOR CONTROL
93 ns
NGTB20N120IHLWG
NGTB20N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 485ns nominal turn off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
40 A
192 W
485 ns
NGTB20N120LWG
NGTB20N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. It has a nominal turn-off time of 485ns and is ideal for motor control applications due to its single configuration with built-in diode. The transistor operates at a max temperature of 150 °C, making it suitable for high-power applications.
110 ns
NGTB25N120IHLWG
NGTB25N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 475ns toff. Ideal for power control applications due to its 192W Pdiss, FLANGE MOUNT package style, and built-in diode configuration.
50 A
475 ns
NGTB25N120LWG
NGTB25N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 192W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 475ns.
117 ns
NGTG15N60S1EG
NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.
STGW50HF60SD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 284 W; Maximum Collector Current (IC): 110 A; Maximum Gate-Emitter Voltage: 20 V;
110 A
284 W
950 ns
STGW50HF60S
STGW50HF60S by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 110A max collector current, and 284W max power dissipation. Ideal for power control applications due to its single configuration and fast turn-off time of 950ns.
STGWA30N120KD
STGWA30N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 220W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode and fast turn-off time of 756ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
125 Cel
220 W
756 ns
57 ns
STGWA40N120KD
STGWA40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 564ns.
80 A
240 W
564 ns
83 ns
NGTB15N60EG
NGTB15N60EG by Onsemi is an N-CHANNEL IGBT with 117W power dissipation, 600V collector-emitter voltage, and 30A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications in various industries like automotive and industrial equipment.
STGB30H60DF
STGB30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Ptot of 260W. Ideal for power control applications, it operates b/w -40 to 175 °C with a VCEmax of 600V.
7 V
TO-263AB
260 W
234 ns
64 ns
2.4 V
STGP30H60DF
STMicroelectronics' STGP30H60DF is an N-CHANNEL IGBT with 150W power dissipation, 600V collector-emitter voltage, and 60A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
150 W
STGW60H65DRF
STGW60H65DRF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It operates up to 150 °C making it ideal for high-power applications in industrial electronics and motor control systems.
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
NGTB20N120IHSWG
NGTB20N120IHSWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 156W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
NGTB25N120FLWG
NGTB25N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 192W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
NGTB30N120IHLWG
NGTB30N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 260W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
NGTB30N120LWG
NGTB30N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 560W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 596ns.
560 W
596 ns
167 ns
NGTB40N120FLWG
NGTB40N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 260W max power dissipation. Ideal for power control applications, it features a built-in diode, 630ns turn-off time, and operates up to 150°C.
630 ns
172 ns
NGTB40N120IHLWG
NGTB40N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It has a nominal turn off time of 565ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can handle up to 260W of power dissipation.
565 ns
NGTB40N120LWG
NGTB40N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is designed for motor control applications, featuring a nominal turn-off time of 565ns and a max power dissipation of 260W. The transistor has a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
178 ns
STGF35HF60W
STMicroelectronics' STGF35HF60W is an N-CHANNEL IGBT with 600V VCE, 19A IC, and 40W Pd. It operates up to 150 °C making it ideal for high-power applications like motor drives and inverters.
19 A
40 W
STGFW35HF60W
STMicroelectronics' STGFW35HF60W is an N-CHANNEL IGBT with 88W power dissipation, 600V collector-emitter voltage, and 36A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment and motor drives.
36 A
88 W
NGTB40N60IHLWG
NGTB40N60IHLWG by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 230ns and turn-on time of 110ns, it comes in a rectangular package style with through-hole terminals.
230 ns
NGTB50N60FLWG
NGTB50N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 223W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
223 W
Tin (Sn)
IGC70T120T8RL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUUC-N5;
6.3 V
R-XUUC-N5
5
UNCASED CHIP
NO LEAD
2.07 V
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