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TSSOP Flash Memory 105

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
JS28F064M29EWTA by Micron Technology

JS28F064M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

75 ns

8

TOP

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

JS28F128M29EWHF by Micron Technology

JS28F128M29EWHF

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

75 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JS28F128M29EWLA by Micron Technology

JS28F128M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

75 ns

UNIFORM BLOCK

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

128

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

NAND128W3A2BNXE by Micron Technology

NAND128W3A2BNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

45 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

1K

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

NAND256W3A2BNXE by Micron Technology

NAND256W3A2BNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

45 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

268435456 bit

FLASH

8

1

2K

48

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

JS28F128P33BF70A by Micron Technology

JS28F128P33BF70A

Micron Technology

Micron Technology's JS28F128P33BF70A is a NOR type Flash Memory with 8MX16 organization, operating at 3V. It features a small outline package, synchronous mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

20 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

M29W640GB7AN6E by Micron Technology

M29W640GB7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

8

BOTTOM

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

12 mm

M29W512GH7AN6E by Micron Technology

M29W512GH7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

80 ns

8

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

2.7

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F640P33BF70A by Micron Technology

JS28F640P33BF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 4M;

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

4,63

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

SST38VF6401B-70I/TV by Microchip Technology

SST38VF6401B-70I/TV

Microchip Technology

SST38VF6401B-70I/TV by Microchip: 4MX16 Flash Memory with 128 Sectors, 3V Operating Voltage. Ideal for industrial applications, offers 100000 Write/Erase Cycles and fast access time of 70ns. Supports NOR type interface with 4194304 words capacity in a small outline package.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

3/3.3

3

Not Qualified

YES

TS 16949

1.2 mm

32K

.00004 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JS28F00AP33EFA by Micron Technology

JS28F00AP33EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F00AP33TFA by Micron Technology

JS28F00AP33TFA

Micron Technology

Micron Technology's JS28F00AP33TFA is a 64MX16 Flash Memory with 1073741824 bit memory density. Operating at 3V, it has a max access time of 105ns and supports industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

14 mm

JS28F512P33BFD by Micron Technology

JS28F512P33BFD

Micron Technology

Micron Technology's JS28F512P33BFD is a 32MX16 flash memory with 536MB density. Operating at 3V, it offers fast access time of 105ns in industrial temperatures. With parallel interface and bottom boot block, it suits applications requiring high-speed data storage.

105 ns

BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

BOTTOM

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F512P33EFA by Micron Technology

JS28F512P33EFA

Micron Technology

JS28F512P33EFA by Micron Technology is a NOR flash memory with 32MX16 organization, 536MB density, and 105ns access time. It operates at 3V, has a temperature range of -40 to 85°C, and is suitable for industrial applications requiring high-speed parallel memory access.

105 ns

IT ALSO OPERATES IN ASYNCHRONOUS MODE

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

14 mm

JS28F512P33TFA by Micron Technology

JS28F512P33TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Boot Block: TOP;

105 ns

TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE

TOP

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

M29W512GH70N3E by Micron Technology

M29W512GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Programming Voltage (V): 2.7;

80 ns

8

R-PDSO-G56

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

14 mm

M29F010B70N1 by STMicroelectronics

M29F010B70N1

STMicroelectronics

M29F010B70N1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports up to 100K write/erase cycles and comes in a compact SOIC package. Ideal for embedded applications requiring reliable data storage.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

M29W200BB55N1 by STMicroelectronics

M29W200BB55N1

STMicroelectronics

M29W200BB55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and support for data polling, it ensures reliable performance in various electronic devices.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N1 by STMicroelectronics

M29W200BB70N1

STMicroelectronics

M29W200BB70N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and data polling capabilities, it ensures reliable performance in commercial environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N6 by STMicroelectronics

M29W200BB70N6

STMicroelectronics

M29W200BB70N6 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers high endurance of 100K write/erase cycles. Its compact SOIC package ensures efficient surface mounting for space-constrained designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BT55N1 by STMicroelectronics

M29W200BT55N1

STMicroelectronics

M29W200BT55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for space-constrained applications. This device operates asynchronously, ensuring efficient data handling in embedded systems.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70N3T by STMicroelectronics

M29F400BB70N3T

STMicroelectronics

M29F400BB70N3T from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for automotive applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV802D-70TU by Atmel

AT49BV802D-70TU

Atmel

Atmel's AT49BV802D-70TU is a 512Kx16 NOR flash memory with 8/15 sectors, operating at -40 to 85°C. It features asynchronous mode, 3V supply, and parallel interface. Ideal for industrial applications requiring fast access times and reliable data storage in a compact package.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

3

1

8,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV802DT-70TU by Atmel

AT49BV802DT-70TU

Atmel

Atmel's AT49BV802DT-70TU is a 512Kx16 NOR flash memory with 8/15 sectors, operating at -40 to 85°C. It features asynchronous mode, 3V nominal voltage, and parallel interface. Ideal for industrial applications requiring fast access times and reliable data storage in a compact package.

70 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

3

1

8,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JS28F640J3F75A by Micron Technology

JS28F640J3F75A

Micron Technology

Micron Technology's JS28F640J3F75A is a 64Mb NOR flash memory with 4MX16 organization, operating at -40 to 85°C. It features a parallel interface, 4194304 words capacity, and peak reflow temp of 260°C. Ideal for industrial applications requiring fast access times and reliable data storage.

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75B by Micron Technology

JS28F640J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F640J3F75E by Micron Technology

JS28F640J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words: 4194304 words;

75 ns

8

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

64

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

54 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F00AM29EWHA by Micron Technology

JS28F00AM29EWHA

Micron Technology

Micron Technology's JS28F00AM29EWHA is a NOR type Flash Memory with 64MX16 organization, operating at 3V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast access times and high memory density.

110 ns

8

YES

YES

YES

R-PDSO-G56

e4

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16/32

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

M58LW032D110N6 by STMicroelectronics

M58LW032D110N6

STMicroelectronics

M58LW032D110N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 110 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports dual terminal positioning. Ideal for industrial applications requiring reliable data storage.

110 ns

8

YES

YES

NO

R-PDSO-G56

e0

18.4 mm

33554432 bit

FLASH

16

1

32

56

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

NOT SPECIFIED

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00004 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

NOR TYPE

14 mm

XCF04SVOG20C by Xilinx

XCF04SVOG20C

Xilinx

Xilinx XCF04SVOG20C is a 4MX1 NOR flash memory with 4194304-bit density. Operating at 3.3V, it offers 20000 write/erase cycles and supports synchronous mode up to 33MHz clock frequency. Ideal for configuration memory in applications requiring high endurance and low standby current.

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

3.3

Not Qualified

1.19 mm

.01 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

HARDWARE

M29F010B70N6E by STMicroelectronics

M29F010B70N6E

STMicroelectronics

M29F010B70N6E from STMicroelectronics is a NOR flash memory with 128K x 8 organization, operating at 5V. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

M29F200BB50N3 by STMicroelectronics

M29F200BB50N3

STMicroelectronics

M29F200BB50N3 from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, ideal for automotive applications. It features a max access time of 50 ns, supports up to 100K write/erase cycles, and operates in asynchronous mode. Its compact SOIC package ensures efficient surface mounting.

50 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

125 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F200BB70N6E by STMicroelectronics

M29F200BB70N6E

STMicroelectronics

M29F200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F200BT70N6E by STMicroelectronics

M29F200BT70N6E

STMicroelectronics

M29F200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for industrial applications. With dual terminals and a wide temp range (-40 °C to 85 °C), it ensures reliable performance in demanding environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BB70N6E by STMicroelectronics

M29W200BB70N6E

STMicroelectronics

M29W200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating in asynchronous mode, it ensures reliable data storage across various temperatures.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BT70N6E by STMicroelectronics

M29W200BT70N6E

STMicroelectronics

M29W200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

AT49BV163D-70TU by Atmel

AT49BV163D-70TU

Atmel

Atmel's AT49BV163D-70TU is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a standby current of 0.000025A and access time of 70ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70N6E by STMicroelectronics

M29F400BB70N6E

STMicroelectronics

M29F400BB70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F400BT70N6E by STMicroelectronics

M29F400BT70N6E

STMicroelectronics

M29F400BT70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W010B70N6E by STMicroelectronics

M29W010B70N6E

STMicroelectronics

M29W010B70N6E from STMicroelectronics is a NOR flash memory with a 128K x 8 organization, operating at 3.3V and featuring a max access time of 70 ns. It supports asynchronous operation and offers industrial-grade temperature range (-40 °C to 85 °C). Ideal for embedded applications, it ensures high endurance with up to 100k write/erase cycles.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

MT29F8G16ABACAWP:C by Micron Technology

MT29F8G16ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F8G08ABACAWP:C by Micron Technology

MT29F8G08ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 8;

YES

NO

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1.2 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F8G16ABACAWP-IT:C by Micron Technology

MT29F8G16ABACAWP-IT:C

Micron Technology

MT29F8G16ABACAWP-IT:C by Micron Technology is a 512MX16 SLC NAND flash memory with 3.3V programming voltage. It has a 128K word sector size and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-density, fast access time, and low standby current.

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F1G08ABAFAWP-ITE:F by Micron Technology

MT29F1G08ABAFAWP-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAWP-ITE:F is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals in small outline package, and offers high memory density of 1073741824 bits. Ideal for applications requiring fast and reliable non-volatile storage solutions.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

JS28F00AP30EFA by Micron Technology

JS28F00AP30EFA

Micron Technology

Micron Technology's JS28F00AP30EFA is a 64MX16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous mode, 1K sectors, and a page size of 16 words. Ideal for industrial applications requiring fast access times and high memory density.

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

1073741824 bit

FLASH

16

1

1K

56

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.00024 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30EFA by Micron Technology

JS28F512P30EFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

110 ns

SYMMETRICAL BLOCKS

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

512

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

JS28F512P30TFA by Micron Technology

JS28F512P30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

110 ns

TOP BOOT

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

4,511

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000225 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

MT28EW01GABA1HJS-0AAT by Micron Technology

MT28EW01GABA1HJS-0AAT

Micron Technology

Micron Technology's MT28EW01GABA1HJS-0AAT is a 64MX16 NOR flash memory with 1073741824 bit density. Operating at -40 to 105 °C, it has a max access time of 105 ns and uses a programming voltage of 3V. Ideal for industrial applications, this flash memory features a small outline package with dual terminals and gull wing form factor.

105 ns

R-PDSO-G56

18.4 mm

1073741824 bit

FLASH

16

1

56

67108864 words

64M

ASYNCHRONOUS

105 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

14 mm