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TSSOP Flash Memory 105

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
JS28F640J3F75G by Micron Technology

JS28F640J3F75G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Type: NOR TYPE;

75 ns

8

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

64

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

54 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F640P33TF70A by Micron Technology

JS28F640P33TF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .002 Amp;

70 ns

TOP

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

Not Qualified

16K,64K

.002 Amp

Flash Memories

28 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS48F4400P0VB00A by Micron Technology

JS48F4400P0VB00A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

95 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

536870912 bit

FLASH

16

8, 510

56

33554432 words

32M

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000005 Amp

Flash Memories

51 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

SST39SF040-55-4I-WHE-T by Microchip Technology

SST39SF040-55-4I-WHE-T

Microchip Technology

SST39SF040-55-4I-WHE-T by Microchip: 512Kx8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, offering 100000 Write/Erase Cycles and fast access time of 55 ns.

55 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

4194304 bit

FLASH

8

1

1

128

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39SF040-70-4C-WHE-T by Microchip Technology

SST39SF040-70-4C-WHE-T

Microchip Technology

SST39SF040-70-4C-WHE-T by Microchip: 512Kx8 NOR Flash Memory with 70°C max temp, 5V supply, and 70ns access time. Ideal for commercial applications requiring high endurance, featuring 100k Write/Erase cycles and a compact form factor of 12.4mm x 8mm.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

12.4 mm

4194304 bit

FLASH

8

1

1

128

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39SF040-70-4I-WHE-T by Microchip Technology

SST39SF040-70-4I-WHE-T

Microchip Technology

SST39SF040-70-4I-WHE-T by Microchip: NOR flash memory with 512Kx8 organization, 128 sectors of 4K words each. Operating at -40 to 85°C, it offers fast access time of 70ns and endurance up to 100k cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

4194304 bit

FLASH

8

3

1

1

128

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

8 mm

JS28F320J3F75E by Micron Technology

JS28F320J3F75E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH;

75 ns

8

YES

YES

NO

R-PDSO-G56

33554432 bit

FLASH

16

32

56

2097152 words

2M

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F128J3F75H by Micron Technology

JS28F128J3F75H

Micron Technology

Micron Technology's JS28F128J3F75H is a NOR flash memory with 8MX16 organization, 128 sectors, and 8388608 words. It operates at temperatures from -40 to 85°C and has a max access time of 75ns. Ideal for industrial applications requiring high-density parallel flash memory solutions.

75 ns

8

YES

YES

NO

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

Not Qualified

YES

128K

.00012 Amp

Flash Memories

80 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F640P30BF75A by Micron Technology

JS28F640P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Sector Size (Words): 16K,64K;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

JS28F640P30BF75D by Micron Technology

JS28F640P30BF75D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 4,63;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

JS28F640P30TF75A by Micron Technology

JS28F640P30TF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

75 ns

TOP

YES

YES

NO

R-PDSO-G56

67108864 bit

FLASH

16

4,63

56

4194304 words

4M

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.000055 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

MT29F16G08AJADAWP:D by Micron Technology

MT29F16G08AJADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

25 ns

YES

NO

R-PDSO-G48

17179869184 bit

FLASH

8

16K

48

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F16G08ABACAWP:C by Micron Technology

MT29F16G08ABACAWP:C

Micron Technology

MT29F16G08ABACAWP:C by Micron Technology is a 3V/3.3V SLC NAND Flash Memory with 2GX8 organization, 4K sectors, and 512K sector size. It operates b/w 0-70°C, has a memory density of 17179869184 bit, and uses a parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

17179869184 bit

FLASH

8

4K

48

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F32G08ABAAAWP:A by Micron Technology

MT29F32G08ABAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Data Polling: NO;

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AFAAAWP:A by Micron Technology

MT29F64G08AFAAAWP:A

Micron Technology

MT29F64G08AFAAAWP:A by Micron Technology is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bit, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP:A by Micron Technology

MT29F128G08AJAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Data Polling: NO;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-IT:A by Micron Technology

MT29F128G08AJAAAWP-IT:A

Micron Technology

MT29F128G08AJAAAWP-IT:A by Micron Technology is a 16GX8 SLC NAND flash memory with 1M sector size. It operates at -40 to 85 °C, has 48 terminals, and consumes up to 50 mA current. Ideal for industrial applications requiring fast access time of 20 ns and high memory density of 137438953472 bit.

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

JS28F00AP30TFA by Micron Technology

JS28F00AP30TFA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 64M;

110 ns

TOP

YES

YES

NO

R-PDSO-G56

1073741824 bit

FLASH

16

4,1023

56

67108864 words

64M

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16

PARALLEL

1.8,1.8/3.3

Not Qualified

16K,64K

.00024 Amp

Flash Memories

31 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NOR TYPE

SST39SF010A-70-4I-WHE-T by Microchip Technology

SST39SF010A-70-4I-WHE-T

Microchip Technology

SST39SF010A-70-4I-WHE-T by Microchip: 128KX8 NOR Flash Memory with 3-STATE output, operates at -40 to 85 °C. Ideal for industrial applications, featuring 100000 Write/Erase Cycles and 70 ns Access Time. Package style is small outline, thin profile with shrink pitch.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G32

e3

12.4 mm

1048576 bit

FLASH

8

3

1

1

32

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

1.2 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

SST39VF6401B-70-4C-EKE-T by Microchip Technology

SST39VF6401B-70-4C-EKE-T

Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip: NOR flash memory, 3V supply, 4Mx16 organization. Ideal for commercial applications with 100K write/erase cycles, 70ns access time, and 2K sector size.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F32G08ABAAAWP-Z:A by Micron Technology

MT29F32G08ABAAAWP-Z:A

Micron Technology

Micron Technology's MT29F32G08ABAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 4GX8 organization, 8K page size, and 1M sector size. It operates b/w 0-70°C, has a memory density of 34359738368 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AFAAAWP-Z:A by Micron Technology

MT29F64G08AFAAAWP-Z:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-Z:A by Micron Technology

MT29F128G08AJAAAWP-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

M29W128GSH70N6E by Micron Technology

M29W128GSH70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 128;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

M29W128GSL70N6E by Micron Technology

M29W128GSL70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .0001 Amp;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

NAND512W3A2SN6E by Micron Technology

NAND512W3A2SN6E

Micron Technology

Micron's NAND512W3A2SN6E is a 64MX8 SLC NAND flash memory with 536870912-bit density. Operating at 3V, it has a temp range of -40 to 85°C and uses parallel interface with 0.5mm pitch. Ideal for industrial applications, this compact chip measures 18.4mm x 12mm x 1.2mm and features Ni/Pd/Au finish on dual terminals.

R-PDSO-G48

e4

18.4 mm

536870912 bit

FLASH

8

3

1

48

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

JS28F128P30BF75A by Micron Technology

JS28F128P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

TC58NVG1S3ETAI0 by Toshiba

TC58NVG1S3ETAI0

Toshiba

Toshiba's TC58NVG1S3ETAI0 is a 256MX8 flash memory with 2K sectors and 128K word sector size. Operating at 3.3V, it offers fast access time of 25ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring high memory density and reliable performance in a small outline package.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

8

1

2K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

SERIAL

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NAND128W3AABN6E by Micron Technology

NAND128W3AABN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

35 ns

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

JS28F064M29EWHA by Micron Technology

JS28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

128

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JS28F128P30TF75A by Micron Technology

JS28F128P30TF75A

Micron Technology

Micron Technology's JS28F128P30TF75A is a NOR flash memory with 8MX16 organization, operating at 1.8V. It features synchronous operation, 8388608 words capacity, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

75 ns

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

JS28F064M29EWBA by Micron Technology

JS28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

14 mm

MX30LF1G08AA-TI by Macronix

MX30LF1G08AA-TI

Macronix

Macronix's MX30LF1G08AA-TI is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating at -40 to 85°C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

JS28F128P33TF70A by Micron Technology

JS28F128P33TF70A

Micron Technology

Micron Technology's JS28F128P33TF70A is a NOR flash memory with 8MX16 organization, 8388608 words capacity, and 16K/64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring high-density memory with fast access speeds.

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3,3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

JS28F256P33BFE by Micron Technology

JS28F256P33BFE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Current: 31 mA;

105 ns

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

4,255

56

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

2.5/3.3

2.7

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

M29W256GH70N3E by Micron Technology

M29W256GH70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G56;

70 ns

8

BOTTOM/TOP

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

125 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

14 mm

M29DW256G70NF6E by Micron Technology

M29DW256G70NF6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Organization: 16MX16;

70 ns

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

M29DW256G7ANF6E by Micron Technology

M29DW256G7ANF6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

70 ns

R-PDSO-G56

e3

18.4 mm

268435456 bit

FLASH

16

1

56

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

JS28F512M29EWHA by Micron Technology

JS28F512M29EWHA

Micron Technology

Micron Technology's JS28F512M29EWHA is a NOR flash memory with 32MX16 organization, 512 sectors, and 33554432 words. Operating at -40 to 85°C, it has a standby current of 0.000225A and access time of 110ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

110 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

512

56

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

16/32

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.000225 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm

JR28F032M29EWBA by Micron Technology

JR28F032M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

75 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWHA by Micron Technology

JR28F032M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 16;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

64

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWLA by Micron Technology

JR28F032M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

64

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWTA by Micron Technology

JR28F032M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

75 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F064M29EWBA by Micron Technology

JR28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

75 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F064M29EWHA by Micron Technology

JR28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

JR28F064M29EWLA by Micron Technology

JR28F064M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F064M29EWTA by Micron Technology

JR28F064M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Density: 67108864 bit;

75 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

JS28F064M29EWLA by Micron Technology

JS28F064M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

75 ns

8

YES

YES

YES

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

128

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

14 mm