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JS28F512M29EWHA

Micron Technology

JS28F512M29EWHA by Micron Technology

Micron Technology's JS28F512M29EWHA is a NOR flash memory with 32MX16 organization, 512 sectors, and 33554432 words. Operating at -40 to 85°C, it has a standby current of 0.000225A and access time of 110ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

Median Price

$6.693

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Avnet

USA . 207 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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$5.264

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650

$5.264

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Bristol Electronics

USA . 56 parts In-Stock

1+ parts

$12.000

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$7.200

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56

$12.000

$7.200

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American Microsemiconductor Inc.

USA . 7 parts In-Stock

1+ parts

$12.670

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7

$12.670

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Cyclops Electronics Ltd

UK . 11,554 parts In-Stock

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Chip Stock

USA . 10,900 parts In-Stock

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Sensible Micro Corp

USA . 4,547 parts In-Stock

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Vyrian

USA . 4,199 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Dan-Mar Components

USA . 657 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 608 parts In-Stock

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608

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Digiode

USA . 584 parts In-Stock

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584

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EMSNET

USA . 74 parts In-Stock

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Prism Electronics

USA . 28 parts In-Stock

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Micros

Poland . 16 parts In-Stock

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$6.714

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$6.714

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Partservice

France . 16 parts In-Stock

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$6.229

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$6.180

10k+ parts

$6.180

16

-

$6.229

$6.180

$6.180

Micros sp.j. W. Kędra i J. Lic

Poland . 16 parts In-Stock

1+ parts

-

100+ parts

$6.673

1k+ parts

$6.620

10k+ parts

$6.620

16

-

$6.673

$6.620

$6.620

Electronics Depot

USA . 10 parts In-Stock

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10

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Connector Distribution Corp

USA . 10 parts In-Stock

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10

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Right Parts Inc.

USA . 10 parts In-Stock

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10

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Atlantic Semiconductor

USA . 7 parts In-Stock

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7

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Distributors (Availability)

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$5.264

100+ parts

-

1k+ parts

$5.001

10k+ parts

$4.896

2,000

$5.264

-

$5.001

$4.896

Component Stockers USA

USA . 226 parts In-Stock

1+ parts

$8.240

100+ parts

$7.830

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226

$8.240

$7.830

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Ampacity Inc.

Singapore . 321 parts In-Stock

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$15.000

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321

$15.000

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AZTECH Wire

Italy . 701 parts In-Stock

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$16.099

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Perfect Parts

USA . 19,178 parts In-Stock

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Kepictronics

USA . 14,976 parts In-Stock

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Epart123

USA . 13,248 parts In-Stock

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$9.620

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$9.620

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A-Z Elektronik GmbH

Germany . 7,984 parts In-Stock

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RC Electronics

USA . 6,739 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,904 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Corphita

USA . 1,307 parts In-Stock

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Microchip USA

USA . 300 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 42 parts In-Stock

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Glotronic Ltd.

UK . 34 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 4 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with Micron Technology's JS28F512M29EWHA Flash Memory. Designed for industrial-grade applications, this NOR type memory offers unparalleled reliability and performance. With a compact package style and high memory density, this flash memory is perfect for a wide range of devices. Experience lightning-fast access times, low standby currents, and seamless command user interface, making it the ideal choice for your next project. Trust Micron Technology for quality products that deliver exceptional value and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for portable devices.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3

Operating at a standard supply voltage of 3V provides compatibility with a wide range of systems and power sources.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh environments with a wide temperature range.

Memory IC Type: FLASH

The use of flash memory technology offers fast read/write speeds, high reliability, and low power consumption for efficient data storage.

Technical Specifications

Flash Memory JS28F512M29EWHA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

110 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

512

No. of Terminals:

56

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

16/32

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.000225 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

31 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F512M29EWHA Memory ICs trade compliance attributes, and parameters.

ECCN

3A991

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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