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SST39VF6401B-70-4C-EKE-T

Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip: NOR flash memory, 3V supply, 4Mx16 organization. Ideal for commercial applications with 100K write/erase cycles, 70ns access time, and 2K sector size.

Median Price

$7.798

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$7.798

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$7.798

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-

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Vyrian

USA . 7,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,221

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-

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Chip Stock

USA . 6,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,900

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,400 parts In-Stock

1+ parts

$7.798

100+ parts

-

1k+ parts

-

10k+ parts

$7.642

2,400

$7.798

-

-

$7.642

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$7.798

100+ parts

-

1k+ parts

-

10k+ parts

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1,000

$7.798

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-

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AZTECH Wire

Italy . 882 parts In-Stock

1+ parts

$13.587

100+ parts

-

1k+ parts

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10k+ parts

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882

$13.587

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Ampacity Inc.

Singapore . 810 parts In-Stock

1+ parts

$18.000

100+ parts

-

1k+ parts

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810

$18.000

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West Coast Incorporated

USA . 6,522 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,522

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Argo Parts USA

USA . 3,344 parts In-Stock

1+ parts

-

100+ parts

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3,344

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,000

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Overview

Experience superior performance and reliability with the Microchip Technology SST39VF6401B-70-4C-EKE-T Flash Memory. As a trusted manufacturer, Microchip Technology ensures top-notch quality in every product. This Flash Memory is perfect for a variety of applications, offering fast access times and high endurance for 100,000 Write/Erase cycles. With a wide voltage range and low supply current, this Flash Memory provides excellent value and benefits to customers seeking reliable data storage solutions. Trust Microchip Technology for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the flash memory, ensuring a long lifespan.

Surface Mount: YES

Allows for easy and secure installation on PCBs, saving time during assembly.

Operating Mode: ASYNCHRONOUS

Enables independent operation, improving efficiency in data access and manipulation.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage level for consistent and reliable performance of the flash memory.

Maximum Operating Temperature: 70 °C

Can operate reliably in varying temperature conditions, ideal for a wide range of applications.

Memory Density: 67108864 bit

High memory density allows for storing a large amount of data in a compact space.

Endurance: 100000 Write/Erase Cycles

Withstands frequent write and erase cycles, ensuring data integrity and longevity.

Technical Specifications

Flash Memory SST39VF6401B-70-4C-EKE-T attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Access Time:

70 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

Minimum Data Retention Time:

100

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Sectors/Size:

2K

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

2K

Maximum Standby Current:

.00002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

SST39VF6401B-70-4C-EKE-T Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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