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MT29F32G08ABAAAWP-Z:A

Micron Technology

MT29F32G08ABAAAWP-Z:A by Micron Technology

Micron Technology's MT29F32G08ABAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 4GX8 organization, 8K page size, and 1M sector size. It operates b/w 0-70°C, has a memory density of 34359738368 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,821 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,821

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Digiode

USA . 1,721 parts In-Stock

1+ parts

-

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1k+ parts

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1,721

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

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1k+ parts

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 762 parts In-Stock

1+ parts

$7.000

100+ parts

-

1k+ parts

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10k+ parts

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762

$7.000

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AZTECH Wire

Italy . 751 parts In-Stock

1+ parts

$14.534

100+ parts

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751

$14.534

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Perfect Parts

USA . 2,280 parts In-Stock

1+ parts

-

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2,280

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Corphita

USA . 1,076 parts In-Stock

1+ parts

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1,076

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Kepictronics

USA . 774 parts In-Stock

1+ parts

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774

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Microchip USA

USA . 223 parts In-Stock

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223

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience the cutting-edge technology of Micron Technology with the MT29F32G08ABAAAWP-Z:A Flash Memory. As a leader in the industry, Micron delivers top-of-the-line quality and reliability. This versatile product is perfect for a wide range of applications, offering customers seamless performance and efficiency. Trust in Micron to provide you with the value, benefits, and advantages you need to take your projects to the next level. Choose excellence, choose Micron Technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body increases durability and ensures reliable protection for the flash memory device.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation, making it suitable for applications where space is limited.

Package Shape: RECTANGULAR

The rectangular shape of the package provides compatibility with most standard circuit board designs, simplifying the integration process.

Power Supplies (V): 3/3.3

With power supplies of 3V and 3.3V, this flash memory device offers versatile compatibility with various systems and applications.

No. of Terminals: 48

The 48 terminals provide ample connectivity options for efficient data transfer and reliable performance.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch design of the package style optimize space utilization and enhance portability.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures stable and consistent performance even in demanding environmental conditions.

Organization: 4GX8

The 4GX8 organization enhances data access speed and efficiency, making it ideal for applications requiring fast read/write capabilities.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C enables reliable operation in a wide range of temperature conditions.

No. of Sectors/Size: 4K

The 4K sectors provide efficient data management and organization, enhancing the overall performance of the flash memory device.

Technical Specifications

Flash Memory MT29F32G08ABAAAWP-Z:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

4K

No. of Terminals:

48

No. of Words:

4294967296 words

No. of Words Code:

4G

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

8K

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

1M

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F32G08ABAAAWP-Z:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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