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48 Flash Memory 194

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M28W320CT90N6 by STMicroelectronics

M28W320CT90N6

STMicroelectronics

M28W320CT90N6 from STMicroelectronics is a 32Mbit NOR Flash memory with a 90 ns access time, operating b/w -40 °C to 85°C. It features an asynchronous mode and supports dual terminal positioning for efficient surface mounting. Ideal for industrial applications requiring reliable data storage.

90 ns

TOP BOOT BLOCK

TOP

YES

YES

NO

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3,3/3.3

3

Not Qualified

1.2 mm

4K,32K

.000005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29W200BB55N1 by STMicroelectronics

M29W200BB55N1

STMicroelectronics

M29W200BB55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and support for data polling, it ensures reliable performance in various electronic devices.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N1 by STMicroelectronics

M29W200BB70N1

STMicroelectronics

M29W200BB70N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for embedded applications. With dual terminals and data polling capabilities, it ensures reliable performance in commercial environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BB70N6 by STMicroelectronics

M29W200BB70N6

STMicroelectronics

M29W200BB70N6 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers high endurance of 100K write/erase cycles. Its compact SOIC package ensures efficient surface mounting for space-constrained designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W200BT55N1 by STMicroelectronics

M29W200BT55N1

STMicroelectronics

M29W200BT55N1 from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a fast access time of 55 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for space-constrained applications. This device operates asynchronously, ensuring efficient data handling in embedded systems.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70N3T by STMicroelectronics

M29F400BB70N3T

STMicroelectronics

M29F400BB70N3T from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for automotive applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29W400BT55ZA1 by STMicroelectronics

M29W400BT55ZA1

STMicroelectronics

STMicroelectronics M29W400BT55ZA1 is a 256Kx16 NOR Flash Memory with 3.3V supply, operating at -40 to 85 °C. It features 100000 Write/Erase cycles, 55ns access time, and supports asynchronous mode. Ideal for applications requiring high-speed data storage in compact devices.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PBGA-B48

e1

9 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

AT49BV802D-70TU by Atmel

AT49BV802D-70TU

Atmel

Atmel's AT49BV802D-70TU is a 512Kx16 NOR flash memory with 8/15 sectors, operating at -40 to 85°C. It features asynchronous mode, 3V supply, and parallel interface. Ideal for industrial applications requiring fast access times and reliable data storage in a compact package.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

3

1

8,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV802DT-70TU by Atmel

AT49BV802DT-70TU

Atmel

Atmel's AT49BV802DT-70TU is a 512Kx16 NOR flash memory with 8/15 sectors, operating at -40 to 85°C. It features asynchronous mode, 3V nominal voltage, and parallel interface. Ideal for industrial applications requiring fast access times and reliable data storage in a compact package.

70 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

3

1

8,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

TC58NVG3S0FTA00 by Toshiba

TC58NVG3S0FTA00

Toshiba

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 1GX8;

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

MT29F1G08ABADAWP:D by Micron Technology

MT29F1G08ABADAWP:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP:D is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in asynchronous mode. It features a page size of 2K words and sector size of 128K words, suitable for commercial applications requiring fast access times and low standby current.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MX29LV320EBXEI-70G by Macronix

MX29LV320EBXEI-70G

Macronix

Macronix's MX29LV320EBXEI-70G is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 70ns. Ideal for applications requiring high-speed data storage in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.3 mm

8K,64K

.000015 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

YES

NOR TYPE

6 mm

MT28F400B3WG-8BET by Micron Technology

MT28F400B3WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8B by Micron Technology

MT28F400B3WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8TET by Micron Technology

MT28F400B3WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP48,.8,20;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B3WG-8T by Micron Technology

MT28F400B3WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

M29F800DB55N1 by STMicroelectronics

M29F800DB55N1

STMicroelectronics

M29F800DB55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB55N6 by STMicroelectronics

M29F800DB55N6

STMicroelectronics

M29F800DB55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

55 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N1 by STMicroelectronics

M29F800DB70N1

STMicroelectronics

M29F800DB70N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and a max access time of 70ns. It features an asynchronous operation mode, dual terminal position, and is ideal for embedded applications requiring reliable data storage. Its compact SOIC package ensures efficient space utilization in electronic designs.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DB70N6 by STMicroelectronics

M29F800DB70N6

STMicroelectronics

M29F800DB70N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N1 by STMicroelectronics

M29F800DT55N1

STMicroelectronics

M29F800DT55N1 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a compact SOIC package, operates asynchronously, and supports data polling for efficient programming. Ideal for embedded applications requiring reliable storage.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT55N6 by STMicroelectronics

M29F800DT55N6

STMicroelectronics

M29F800DT55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal configuration in a thin SO package, suitable for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in diverse environments.

55 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70N1 by STMicroelectronics

M29F800DT70N1

STMicroelectronics

M29F800DT70N1 from STMicroelectronics is a 5V NOR flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates asynchronously, and supports data polling. Ideal for embedded applications requiring reliable storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV322AT-70TI by Atmel

AT49BV322AT-70TI

Atmel

Atmel's AT49BV322AT-70TI is a 2MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a programming voltage of 3V and max access time of 70ns. Ideal for industrial applications requiring fast data polling and common flash interface support.

70 ns

TOP/BOTTOM BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

45 mA

3.6 V

2.65 V

2.7

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

M29F800DB70N6E by STMicroelectronics

M29F800DB70N6E

STMicroelectronics

M29F800DB70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and supports asynchronous mode for industrial applications. Ideal for embedded systems requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F800DT70N6E by STMicroelectronics

M29F800DT70N6E

STMicroelectronics

M29F800DT70N6E from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a compact SOIC package, operates in -40 °C to 85°C range, and is ideal for industrial applications requiring reliable data storage.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

YES

R-PDSO-G48

e6

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,15

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.00015 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN BISMUTH

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT49BV162A-70TI by Atmel

AT49BV162A-70TI

Atmel

Atmel's AT49BV162A-70TI is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at 3V, it offers fast access time of 70ns and low standby current of 0.000025A. Ideal for industrial applications requiring reliable non-volatile memory with parallel interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

45 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT28F800B3WP-9B by Micron Technology

MT28F800B3WP-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Additional Features: BOTTOM BOOT BLOCK;

90 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WP-9T by Micron Technology

MT28F800B3WP-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

90 ns

TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WP-8BET by Micron Technology

MT28F800B5WP-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WP-8B by Micron Technology

MT28F800B5WP-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WP-8T by Micron Technology

MT28F800B5WP-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WP-8B by Micron Technology

MT28F400B5WP-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

80 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WP-8TET by Micron Technology

MT28F400B5WP-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WP-8T by Micron Technology

MT28F400B5WP-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e3

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT29F2G08AACWP:CTR by Micron Technology

MT29F2G08AACWP:CTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Qualification: Not Qualified;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MX29LV400CBTI-70G by Macronix

MX29LV400CBTI-70G

Macronix

Macronix's MX29LV400CBTI-70G is a 48-terminal NOR flash memory with 4MX16 organization, operating at 3V. It offers fast access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring high-density parallel memory with common flash interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

3

1

1,2,1,7

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MX29LV800CBXEI-70G by Macronix

MX29LV800CBXEI-70G

Macronix

Macronix's MX29LV800CBXEI-70G is an 8MX16 NOR flash memory with 8388608 words, operating at 3V. It features a low profile grid array package and offers fast access time of 70ns. Ideal for industrial applications requiring high-density memory with parallel interface.

70 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

134217728 bit

FLASH

16

1

1,2,1,15

48

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.3 mm

16K,8K,32K,64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

W19B320ABT7H by Winbond Electronics

W19B320ABT7H

Winbond Electronics

W19B320ABT7H by Winbond Electronics is a NOR flash memory with 2MX16 organization and 8,63 sectors. It operates at a voltage of 3V and has a max access time of 70ns. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

3

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-20 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

OTHER

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F4G08BABWPET by Micron Technology

MT29F4G08BABWPET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 4K;

18 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

4294967296 bit

FLASH

8

1

4K

48

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

M29F200BB50N3 by STMicroelectronics

M29F200BB50N3

STMicroelectronics

M29F200BB50N3 from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, ideal for automotive applications. It features a max access time of 50 ns, supports up to 100K write/erase cycles, and operates in asynchronous mode. Its compact SOIC package ensures efficient surface mounting.

50 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

125 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F200BB70N6E by STMicroelectronics

M29F200BB70N6E

STMicroelectronics

M29F200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F200BT70N6E by STMicroelectronics

M29F200BT70N6E

STMicroelectronics

M29F200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 5V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. It operates asynchronously in a compact SOIC package, ideal for industrial applications. With dual terminals and a wide temp range (-40 °C to 85 °C), it ensures reliable performance in demanding environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BB70N6E by STMicroelectronics

M29W200BB70N6E

STMicroelectronics

M29W200BB70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating in asynchronous mode, it ensures reliable data storage across various temperatures.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29W200BT70N6E by STMicroelectronics

M29W200BT70N6E

STMicroelectronics

M29W200BT70N6E from STMicroelectronics is a 2Mbit NOR Flash memory with a 3.3V supply, featuring a max access time of 70 ns and endurance of 100K write/erase cycles. Its compact SOIC package makes it ideal for industrial applications. Operating b/w -40 °C to 85 °C ensures reliability in harsh environments.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

20 mm

2097152 bit

FLASH

16

1

1,2,1,3

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

AT49BV163D-70TU by Atmel

AT49BV163D-70TU

Atmel

Atmel's AT49BV163D-70TU is a 1MX16 NOR flash memory with 8K,64K sector size. Operating at -40 to 85 °C, it has a standby current of 0.000025A and access time of 70ns. Ideal for industrial applications requiring fast data access and reliable non-volatile storage.

70 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

16777216 bit

FLASH

16

3

1

8,31

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.000025 Amp

Flash Memories

25 mA

3.6 V

2.65 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70N6E by STMicroelectronics

M29F400BB70N6E

STMicroelectronics

M29F400BB70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm

M29F400BT70N6E by STMicroelectronics

M29F400BT70N6E

STMicroelectronics

M29F400BT70N6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SOIC package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G48

e3/e6

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

5

5

Not Qualified

YES

1.2 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

40

YES

NOR TYPE

12 mm