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48 Flash Memory 194

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39VF1601-70-4C-B3KE-T by Microchip Technology

SST39VF1601-70-4C-B3KE-T

Microchip Technology

SST39VF1601-70-4C-B3KE-T by Microchip Technology is a 1MX16 NOR flash memory with 512 sectors and 3V nominal voltage. It operates in asynchronous mode, has 100000 write/erase cycles endurance, and supports common flash interface. Ideal for applications requiring fast access time, such as embedded systems and consumer electronics.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

16777216 bit

FLASH

16

1

1

512

48

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F16G08AJADAWP:D by Micron Technology

MT29F16G08AJADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

25 ns

YES

NO

R-PDSO-G48

17179869184 bit

FLASH

8

16K

48

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F16G08ABACAWP:C by Micron Technology

MT29F16G08ABACAWP:C

Micron Technology

MT29F16G08ABACAWP:C by Micron Technology is a 3V/3.3V SLC NAND Flash Memory with 2GX8 organization, 4K sectors, and 512K sector size. It operates b/w 0-70°C, has a memory density of 17179869184 bit, and uses a parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

17179869184 bit

FLASH

8

4K

48

2147483648 words

2G

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

512K

.00005 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F32G08ABAAAWP:A by Micron Technology

MT29F32G08ABAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Data Polling: NO;

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AFAAAWP:A by Micron Technology

MT29F64G08AFAAAWP:A

Micron Technology

MT29F64G08AFAAAWP:A by Micron Technology is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bit, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP:A by Micron Technology

MT29F128G08AJAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Data Polling: NO;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-IT:A by Micron Technology

MT29F128G08AJAAAWP-IT:A

Micron Technology

MT29F128G08AJAAAWP-IT:A by Micron Technology is a 16GX8 SLC NAND flash memory with 1M sector size. It operates at -40 to 85 °C, has 48 terminals, and consumes up to 50 mA current. Ideal for industrial applications requiring fast access time of 20 ns and high memory density of 137438953472 bit.

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

SST39VF3201C-70-4I-B3KE-T by Microchip Technology

SST39VF3201C-70-4I-B3KE-T

Microchip Technology

SST39VF3201C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications requiring high endurance (100K cycles) and fast data polling. Features 8 sectors, 2097152 words, and common flash interface for parallel programming.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF3202C-70-4I-B3KE-T by Microchip Technology

SST39VF3202C-70-4I-B3KE-T

Microchip Technology

SST39VF3202C-70-4I-B3KE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, featuring 100K cycles endurance and 2097152 words capacity in a compact GRID ARRAY package.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

SST39VF6401B-70-4C-B1KE-T by Microchip Technology

SST39VF6401B-70-4C-B1KE-T

Microchip Technology

SST39VF6401B-70-4C-B1KE-T by Microchip: 3V NOR Flash Memory, 4Mx16 organization, 2K sectors. Ideal for commercial applications requiring fast access time and high endurance with a max operating temperature of 70°C.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

10 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

YES

NOR TYPE

8 mm

SST39VF6401B-70-4C-EKE-T by Microchip Technology

SST39VF6401B-70-4C-EKE-T

Microchip Technology

SST39VF6401B-70-4C-EKE-T by Microchip: NOR flash memory, 3V supply, 4Mx16 organization. Ideal for commercial applications with 100K write/erase cycles, 70ns access time, and 2K sector size.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

2K

48

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST38VF6401-90-5I-B3KE-T by Microchip Technology

SST38VF6401-90-5I-B3KE-T

Microchip Technology

SST38VF6401-90-5I-B3KE-T by Microchip: 4MX16 NOR Flash Memory with 1K sectors, 4194304 words, and 100000 Write/Erase Cycles. Ideal for industrial applications requiring fast access time (90 ns) and low standby current (0.00003 Amp).

90 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

1

1K

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

4

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

4K

.00003 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F32G08ABAAAWP-Z:A by Micron Technology

MT29F32G08ABAAAWP-Z:A

Micron Technology

Micron Technology's MT29F32G08ABAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 4GX8 organization, 8K page size, and 1M sector size. It operates b/w 0-70°C, has a memory density of 34359738368 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

34359738368 bit

FLASH

8

4K

48

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AFAAAWP-Z:A by Micron Technology

MT29F64G08AFAAAWP-Z:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-Z:A by Micron Technology

MT29F128G08AJAAAWP-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

SST39VF3202C-70-4I-B3KE by Microchip Technology

SST39VF3202C-70-4I-B3KE

Microchip Technology

SST39VF3202C-70-4I-B3KE by Microchip: 2MX16 Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, offers 100K write/erase cycles and operates in asynchronous mode.

70 ns

TOP BOOT-BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

3

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

NAND512W3A2SN6E by Micron Technology

NAND512W3A2SN6E

Micron Technology

Micron's NAND512W3A2SN6E is a 64MX8 SLC NAND flash memory with 536870912-bit density. Operating at 3V, it has a temp range of -40 to 85°C and uses parallel interface with 0.5mm pitch. Ideal for industrial applications, this compact chip measures 18.4mm x 12mm x 1.2mm and features Ni/Pd/Au finish on dual terminals.

R-PDSO-G48

e4

18.4 mm

536870912 bit

FLASH

8

3

1

48

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

SST39LF401C-55-4C-B3KE by Microchip Technology

SST39LF401C-55-4C-B3KE

Microchip Technology

SST39LF401C-55-4C-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 100000 Write/Erase Cycles. Operating at 3.3V, it offers fast access time of 55ns and features a parallel interface for high-speed data transfer. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

55 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF402C-55-4C-B3KE by Microchip Technology

SST39LF402C-55-4C-B3KE

Microchip Technology

SST39LF402C-55-4C-B3KE by Microchip: 256Kx16 NOR Flash Memory with 70°C max temp, 55ns access time, and 100k Write/Erase cycles. Ideal for commercial applications requiring fast data access and high endurance.

55 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39VF402C-70-4I-B3KE by Microchip Technology

SST39VF402C-70-4I-B3KE

Microchip Technology

SST39VF402C-70-4I-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 3V nominal voltage. It features 100,000 write/erase cycles, operates in industrial temperature range (-40 to 85°C), and has a max access time of 70ns. Ideal for applications requiring fast, reliable non-volatile memory storage in compact electronic devices.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

TC58NVG1S3ETAI0 by Toshiba

TC58NVG1S3ETAI0

Toshiba

Toshiba's TC58NVG1S3ETAI0 is a 256MX8 flash memory with 2K sectors and 128K word sector size. Operating at 3.3V, it offers fast access time of 25ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring high memory density and reliable performance in a small outline package.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

8

1

2K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

SERIAL

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

NAND128W3AABN6E by Micron Technology

NAND128W3AABN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

35 ns

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

M29W800FB70ZA3SE by Micron Technology

M29W800FB70ZA3SE

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

M29W800FT70ZA3SE by Micron Technology

M29W800FT70ZA3SE

Micron Technology

M29W800FT70ZA3SE by Micron Technology is a 512KX16 Flash Memory with an operating mode of asynchronous and a max access time of 70 ns. It is commonly used in automotive applications due to its temperature grade and thin profile package style.

70 ns

TOP BOOT BLOCK

8

TOP

R-PBGA-B48

e1

8 mm

8388608 bit

FLASH

16

1

48

524288 words

512K

ASYNCHRONOUS

125 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

1.2 mm

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

6 mm

MX30LF1G08AA-TI by Macronix

MX30LF1G08AA-TI

Macronix

Macronix's MX30LF1G08AA-TI is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating at -40 to 85°C. It features a 2K word page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

1K

48

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

260

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

SST39VF3201-70-4C-EKE-T by Microchip Technology

SST39VF3201-70-4C-EKE-T

Microchip Technology

SST39VF3201-70-4C-EKE-T by Microchip: NOR flash memory, 2Mx16 organization, 1K sectors. Ideal for commercial applications requiring 3V supply voltage and 70°C max operating temp. Features include 100k write/erase cycles, 70ns access time, and asynchronous operation.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

SST39VF3201-70-4I-EKE-T by Microchip Technology

SST39VF3201-70-4I-EKE-T

Microchip Technology

SST39VF3201-70-4I-EKE-T by Microchip: 2MX16 NOR Flash Memory with 3V supply, 70ns access time, and 100K cycles endurance. Ideal for industrial applications requiring fast, reliable non-volatile memory storage in a compact package. Supports asynchronous operation and features a common flash interface for easy integration.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

1

1K

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

3

Not Qualified

1.2 mm

2K

.00002 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWBA by Micron Technology

JR28F032M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

75 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWHA by Micron Technology

JR28F032M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 16;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

64

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWLA by Micron Technology

JR28F032M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

64

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F032M29EWTA by Micron Technology

JR28F032M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

75 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F064M29EWBA by Micron Technology

JR28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;

75 ns

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F064M29EWHA by Micron Technology

JR28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

JR28F064M29EWLA by Micron Technology

JR28F064M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

75 ns

8

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

JR28F064M29EWTA by Micron Technology

JR28F064M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Density: 67108864 bit;

75 ns

8

TOP

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

YES

NOR TYPE

12 mm

NAND128W3A2BNXE by Micron Technology

NAND128W3A2BNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

45 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

1K

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

NAND256W3A2BNXE by Micron Technology

NAND256W3A2BNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

45 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

268435456 bit

FLASH

8

1

2K

48

33554432 words

32M

ASYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

PZ28F032M29EWBA by Micron Technology

PZ28F032M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

65 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F032M29EWHA by Micron Technology

PZ28F032M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 25 mA;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

1

64

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWBA by Micron Technology

PZ28F064M29EWBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

60 ns

8

BOTTOM

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWHA by Micron Technology

PZ28F064M29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Common Flash Interface: YES;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWLA by Micron Technology

PZ28F064M29EWLA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Width: 6 mm;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWLX by Micron Technology

PZ28F064M29EWLX

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 65 ns;

65 ns

8

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

PZ28F064M29EWTA by Micron Technology

PZ28F064M29EWTA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

65 ns

8

TOP

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

260

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

YES

NOR TYPE

6 mm

PZ28F064M29EWTX by Micron Technology

PZ28F064M29EWTX

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

65 ns

8

TOP

YES

YES

YES

R-PBGA-B48

e1

8 mm

67108864 bit

FLASH

16

1

8,127

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1 mm

8K,64K

.00012 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F2G16ABAEAWP-IT:E by Micron Technology

MT29F2G16ABAEAWP-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

2K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F2G16ABAEAWP:E by Micron Technology

MT29F2G16ABAEAWP:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

2K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F16G08AJADAWP-IT:D by Micron Technology

MT29F16G08AJADAWP-IT:D

Micron Technology

MT29F16G08AJADAWP-IT:D by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It features a page size of 2K words, sector size of 128K words, and parallel interface. Ideal for industrial applications requiring fast access time and low standby current.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

17179869184 bit

FLASH

8

1

16K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm