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48 Flash Memory 194

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MX29GL320EBTI-70G by Macronix

MX29GL320EBTI-70G

Macronix

Macronix's MX29GL320EBTI-70G is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 70ns. Ideal for applications requiring high-speed data storage in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.0001 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MX30LF1G28AD-TI by Macronix

MX30LF1G28AD-TI

Macronix

The Macronix MX30LF1G28AD-TI is a 128Mx8 SLC NAND flash memory with 1K sectors and 2K word page size. Operating at 3V, it offers 60000 write/erase cycles and supports parallel interface. With a small outline package, it's ideal for applications requiring high endurance and fast data access in a compact form factor.

NO

NO

10

60000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

3

YES

1.2 mm

128K

.00005 Amp

50 mA

3.6 V

2.7 V

3

YES

CMOS

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

.00002 ms

MT29F64G08AJABAWP-IT:BTR by Micron Technology

MT29F64G08AJABAWP-IT:BTR

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words: 8589934592 words; Peak Reflow Temperature (C): 260;

20 ns

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F8G08ABABAWP-ITX:B by Micron Technology

MT29F8G08ABABAWP-ITX:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-ITX:B is an 8Gb SLC NAND flash memory with 3.3V supply voltage, operating from -40 to 85°C. It has a memory density of 8.58 Gb and is suitable for industrial applications requiring high reliability and performance in a surface-mount package.

NO

R-PDSO-G48

e3

8589934592 bit

FLASH

8

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

RECTANGULAR

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

DUAL

NO

SLC NAND TYPE

MT29F8G16ABACAWP:C by Micron Technology

MT29F8G16ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

70 Cel

0 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F8G08ABACAWP:C by Micron Technology

MT29F8G08ABACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Memory Width: 8;

YES

NO

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1.2 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F8G16ABACAWP-IT:C by Micron Technology

MT29F8G16ABACAWP-IT:C

Micron Technology

MT29F8G16ABACAWP-IT:C by Micron Technology is a 512MX16 SLC NAND flash memory with 3.3V programming voltage. It has a 128K word sector size and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-density, fast access time, and low standby current.

25 ns

YES

NO

R-PDSO-G48

8589934592 bit

FLASH

16

4K

48

536870912 words

512M

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

PARALLEL

3/3.3

3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

35 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F8G08ABABAWP-AATX:B by Micron Technology

MT29F8G08ABABAWP-AATX:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

105 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

NOT SPECIFIED

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NO

SLC NAND TYPE

12 mm

MT29F16G08ABABAWP-AIT:B by Micron Technology

MT29F16G08ABABAWP-AIT:B

Micron Technology

Micron Technology's MT29F16G08ABABAWP-AIT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, offering 4K page size and 100000 write/erase cycles endurance. Suitable for industrial applications, it operates in asynchronous mode with a temperature range of -40 to 85 °C.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

3

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3.3

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

YES

SLC NAND TYPE

12 mm

MT29F1G08ABAFAWP-ITE:F by Micron Technology

MT29F1G08ABAFAWP-ITE:F

Micron Technology

Micron Technology's MT29F1G08ABAFAWP-ITE:F is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals in small outline package, and offers high memory density of 1073741824 bits. Ideal for applications requiring fast and reliable non-volatile storage solutions.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MX30LF1G18AC-TI by Macronix

MX30LF1G18AC-TI

Macronix

Macronix's MX30LF1G18AC-TI is a 3V SLC NAND flash memory with 128Kx8 organization. Operating in industrial temperature range (-40 to 85°C), it offers parallel interface, 131072 words capacity, and 0.5mm terminal pitch. Ideal for applications requiring high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

1048576 bit

FLASH

8

3

1

48

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

W29N01GVSIAA by Winbond Electronics

W29N01GVSIAA

Winbond Electronics

W29N01GVSIAA by Winbond Electronics is a 3.3V SLC NAND Flash Memory with 128Mx8 organization, operating in industrial temperature range of -40 to 85°C. It features parallel interface, 48 terminals, and compact dimensions of 12mm width and 18.4mm length. Ideal for applications requiring high-density memory storage in harsh environments.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MX60LF8G18AC-TI by Macronix

MX60LF8G18AC-TI

Macronix

Macronix's MX60LF8G18AC-TI is a 3V SLC NAND flash memory with 1GX8 organization, operating from -40 to 85 °C. It features a small outline package, 0.5mm terminal pitch, and industrial temperature grade suitable for various embedded applications.

R-PDSO-G48

e3

18.4 mm

8589934592 bit

FLASH

8

3

1

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

M29W640GB70N3E by Micron Technology

M29W640GB70N3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Boot Block: BOTTOM;

70 ns

8

BOTTOM

R-PDSO-G48

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

125 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

NOR TYPE

12 mm

MT29F32G08AFACAWP-IT:C by Micron Technology

MT29F32G08AFACAWP-IT:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP:C by Micron Technology

MT29F32G08AFACAWP:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-Z:C by Micron Technology

MT29F32G08AFACAWP-Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 4G;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

SYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F16G08ABACAWP-Z:C by Micron Technology

MT29F16G08ABACAWP-Z:C

Micron Technology

Micron Technology's MT29F16G08ABACAWP-Z:C is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 512K sector size. It operates synchronously at temperatures b/w 0-70°C and has a max access time of 20ns. Ideal for applications requiring high-speed data storage in compact devices.

20 ns

YES

NO

R-PDSO-G48

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

SYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F8G08ABABAWP:B by Micron Technology

MT29F8G08ABABAWP:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G48;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

3/3.3

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

IS34ML04G084-TLI by Integrated Silicon Solution

IS34ML04G084-TLI

Integrated Silicon Solution

IS34ML04G084-TLI by Integrated Silicon Solution is a 512Mx8 SLC NAND Flash Memory with 3.3V programming voltage. Operating in synchronous mode, it has a memory density of 4294967296 bits and operates at industrial temperature grade. Suitable for applications requiring high-speed data storage and retrieval in compact devices.

R-PDSO-G48

e3

18.4 mm

4294967296 bit

FLASH

8

1

48

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-IT:DTR by Micron Technology

MT29F1G08ABADAWP-IT:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:DTR is a 128MX8 SLC NAND flash memory with 1073741824-bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel mode. With a compact form factor of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded applications requiring reliable non-volatile storage.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-ITX:DTR by Micron Technology

MT29F1G08ABADAWP-ITX:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F2G08AADWP:DTR by Micron Technology

MT29F2G08AADWP:DTR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: SLC NAND TYPE;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F16G08ABACAWP-ITZ:CTR by Micron Technology

MT29F16G08ABACAWP-ITZ:CTR

Micron Technology

Micron Technology's MT29F16G08ABACAWP-ITZ:CTR is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It features a small outline package, parallel interface, and industrial temperature grade suitable for embedded systems and data storage applications.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F2G08ABAEAWP-ITX:ETR by Micron Technology

MT29F2G08ABAEAWP-ITX:ETR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

IS34ML01G084-TLI by Integrated Silicon Solution

IS34ML01G084-TLI

Integrated Silicon Solution

IS34ML01G084-TLI by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 134217728 words. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-density memory in a small outline package.

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

3

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

W29N08GVSIAA by Winbond Electronics

W29N08GVSIAA

Winbond Electronics

W29N08GVSIAA by Winbond Electronics is a 1GX8 SLC NAND flash memory with 8K sectors and 2K page size. Operating at 3V, it offers industrial-grade endurance of 100,000 cycles. With a compact form factor and low standby current, it's ideal for applications requiring high-density data storage in harsh environments.

1

NO

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

8K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

tsop48,.787,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

NOT SPECIFIED

3

YES

1.2 mm

128K

.0002 Amp

350 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

SLC NAND TYPE

12 mm

W29N01HVSINA by Winbond Electronics

W29N01HVSINA

Winbond Electronics

W29N01HVSINA by Winbond Electronics is a 128Mx8 SLC NAND flash memory with 1073741824-bit memory density. Operating at 3.3V, it has an industrial temperature grade and supports parallel interface. With a small outline package style, it is suitable for applications requiring high-speed data storage in harsh environments.

R-PDSO-G48

18.4 mm

1073741824 bit

FLASH

8

1

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

12 mm

IS34ML02G084-TLI by Integrated Silicon Solution

IS34ML02G084-TLI

Integrated Silicon Solution

IS34ML02G084-TLI by Integrated Silicon Solution is a 256MX8 SLC NAND flash memory with 2147483648 bit density. Operating at 3.3V, it has an industrial temperature grade and supports parallel interface. With a compact size of 18.4mm x 12mm x 1.2mm, it is ideal for high-performance embedded systems requiring reliable non-volatile storage solutions.

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

3

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

10

SLC NAND TYPE

12 mm

MT29F2G16ABAEAWP-AAT:E by Micron Technology

MT29F2G16ABAEAWP-AAT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

48

134217728 words

128M

ASYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

M29W320DB80ZA3E by Micron Technology

M29W320DB80ZA3E

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

80 ns

8

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

NOT SPECIFIED

6 mm

NAND512W3A2SNXE by Micron Technology

NAND512W3A2SNXE

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

35 ns

YES

NO

R-PDSO-G48

18.4 mm

512753664 bit

FLASH

8

1

4K

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

512

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

16K

.00005 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

NAND512R3A2SN6E by Micron Technology

NAND512R3A2SN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Technology: CMOS;

R-PDSO-G48

e3

18.4 mm

512753664 bit

FLASH

8

1

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.8

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

NAND512R3A2SN6F by Micron Technology

NAND512R3A2SN6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

R-PDSO-G48

e3

18.4 mm

512753664 bit

FLASH

8

1

48

64094208 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

1.8

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

M29W640GT7AN6E by Micron Technology

M29W640GT7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PDSO-G48

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

MT29F4G08ABADAWP-AATX:DTR by Micron Technology

MT29F4G08ABADAWP-AATX:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

8

1

48

536870912 words

512M

ASYNCHRONOUS

105 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F64G08CFACAWP-Z:C by Micron Technology

MT29F64G08CFACAWP-Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PDSO-G48

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F32G08CBACAWP-ITZ:C by Micron Technology

MT29F32G08CBACAWP-ITZ:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F32G08CBACAWP-Z:C by Micron Technology

MT29F32G08CBACAWP-Z:C

Micron Technology

Micron Technology's MT29F32G08CBACAWP-Z:C is a 3.3V MLC NAND Flash Memory with 4GX8 organization, operating in commercial temperature grade. It features 48 terminals, 0.5mm pitch, and offers 34359738368-bit memory density. Ideal for applications requiring high-speed data storage and retrieval in compact devices.

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F64G08CFACBWP-12Z:C by Micron Technology

MT29F64G08CFACBWP-12Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

R-PDSO-G48

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F16G08ABABAWP-IT:BTR by Micron Technology

MT29F16G08ABABAWP-IT:BTR

Micron Technology

MT29F16G08ABABAWP-IT:BTR by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, operating from -40 to 85°C. It features a parallel interface, 48 terminals in a small outline package, and offers 17179869184-bit memory density. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT29F8G08ABACAWP-AIT:CTR by Micron Technology

MT29F8G08ABACAWP-AIT:CTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

YES

NO

60000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

4K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

YES

1.2 mm

256K

.0001 Amp

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08ABAAAWP-IT:A by Micron Technology

MT29F32G08ABAAAWP-IT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

4K

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

1M

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFACAWP-ITZ:C by Micron Technology

MT29F32G08AFACAWP-ITZ:C

Micron Technology

MT29F32G08AFACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 4GX8 organization, 8K sectors, and 4K page size. It operates in industrial temperature range (-40 to 85 °C) and has a max access time of 20 ns. Ideal for applications requiring high-speed data storage in compact devices.

20 ns

YES

NO

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO

Microchip Technology

SST39VF3201C-70-4I-B3KE-T-VAO by Microchip: 2MX16 NOR Flash Memory, 3V, -40 to 85°C, AEC-Q100 for industrial applications. Features 8 sectors of sizes 4K and 32K words with a max access time of 70ns. Offers common flash interface, endurance of 100k cycles, and operates in asynchronous mode.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

8 mm

33554432 bit

FLASH

16

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

3

YES

AEC-Q100

1.2 mm

4K,32K

.00005 Amp

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

YES

NOR TYPE

6 mm

MT29F2G16ABAEAWP:ETR by Micron Technology

MT29F2G16ABAEAWP:ETR

Micron Technology

Micron Technology's MT29F2G16ABAEAWP:ETR is a 3.3V SLC NAND flash memory with 128Mx16 organization and 2147483648-bit memory density. Operating in asynchronous mode, it has a temperature range of 0-70°C and is suitable for commercial applications requiring high-speed parallel memory access.

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

12 mm

MT29F8G08AAAWP:ATR by Micron Technology

MT29F8G08AAAWP:ATR

Micron Technology

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm; Page Size (words): 2K;

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

8589934592 bit

FLASH

8

1

8K

48

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

YES

1.2 mm

128K

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

S29AL016J70TFM020 by Infineon Technologies

S29AL016J70TFM020

Infineon Technologies

FLASH; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 1M; Maximum Access Time: 70 ns;

70 ns

8

BOTTOM

YES

YES

YES

20

1000000 Write/Erase Cycles

R-PDSO-G48

18.4 mm

16777216 bit

FLASH

16

1

1,2,1,31

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

YES

AEC-Q100

1.2 mm

16K,8K,32K,64K

.000005 Amp

30 mA

3.6 V

2.7 V

3

YES

CMOS

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm