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48 Flash Memory 194

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F4G16ABADAWP-IT:D by Micron Technology

MT29F4G16ABADAWP-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F4G16ABADAWP:D by Micron Technology

MT29F4G16ABADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 256MX16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

M29W640GB7AN6E by Micron Technology

M29W640GB7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

8

BOTTOM

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

12 mm

MT29F2G08AADWP-ET:DTR by Micron Technology

MT29F2G08AADWP-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

MT29F16G08ABACAWP-IT:C by Micron Technology

MT29F16G08ABACAWP-IT:C

Micron Technology

Micron Technology's MT29F16G08ABACAWP-IT:C is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It features a 4K page size, parallel interface, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in compact designs.

30 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F128G08CFAAAWP:A by Micron Technology

MT29F128G08CFAAAWP:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWP:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating in asynchronous mode. It features a memory density of 137.4Gb and is suitable for commercial applications requiring high-speed parallel data processing at temperatures ranging from 0 to 70°C.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWPIT:A by Micron Technology

MT29F128G08CFAAAWPIT:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWPIT:A is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 3.3V and -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWPITZ:A by Micron Technology

MT29F128G08CFAAAWPITZ:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWPITZ:A is a 16GX8 MLC NAND Flash Memory with 137.4Gb density, operating at 3.3V and -40 to 85°C. It features a small outline package, parallel interface, and is ideal for industrial applications requiring high memory capacity in compact designs.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F128G08CFAAAWPZ:A by Micron Technology

MT29F128G08CFAAAWPZ:A

Micron Technology

Micron Technology's MT29F128G08CFAAAWPZ:A is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating at 3.3V, it offers 137438953472 bits density and supports parallel programming. Ideal for commercial applications requiring high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

ASYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F128G08CFAABWP-12:A by Micron Technology

MT29F128G08CFAABWP-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F128G08CFAABWP-12Z:A by Micron Technology

MT29F128G08CFAABWP-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 16G;

R-PDSO-G48

e3

18.4 mm

137438953472 bit

FLASH

8

1

48

17179869184 words

16G

SYNCHRONOUS

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F256G08CJAAAWP:A by Micron Technology

MT29F256G08CJAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 8;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F256G08CJAAAWPIT:A by Micron Technology

MT29F256G08CJAAAWPIT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F256G08CJAAAWPITZ:A by Micron Technology

MT29F256G08CJAAAWPITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F256G08CJAAAWPZ:A by Micron Technology

MT29F256G08CJAAAWPZ:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 274877906944 bit;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

ASYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F256G08CJAABWP-12:A by Micron Technology

MT29F256G08CJAABWP-12:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Width: 12 mm;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F256G08CJAABWP-12Z:A by Micron Technology

MT29F256G08CJAABWP-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;

R-PDSO-G48

e3

18.4 mm

274877906944 bit

FLASH

8

1

48

34359738368 words

32G

SYNCHRONOUS

70 Cel

0 Cel

32GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F64G08CBAAAWP:A by Micron Technology

MT29F64G08CBAAAWP:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 68719476736 bit;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F64G08CBAAAWPIT:A by Micron Technology

MT29F64G08CBAAAWPIT:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F64G08CBAAAWPZ:A by Micron Technology

MT29F64G08CBAAAWPZ:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F64G08CBAABWP-12Z:A by Micron Technology

MT29F64G08CBAABWP-12Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words: 8589934592 words;

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

SYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

MLC NAND TYPE

12 mm

MT29F16G08ABABAWP:B by Micron Technology

MT29F16G08ABABAWP:B

Micron Technology

MT29F16G08ABABAWP:B by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, 4K page size, and 512K sector size. It operates in commercial temperature grade with parallel interface. Ideal for applications requiring fast access times and low standby current.

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F16G08ABABAWP-IT:B by Micron Technology

MT29F16G08ABABAWP-IT:B

Micron Technology

Micron Technology's MT29F16G08ABABAWP-IT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It has a page size of 4K words and sector size of 512K words, suitable for industrial applications requiring fast access times and low standby current.

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

4K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F32G08AFABAWP:B by Micron Technology

MT29F32G08AFABAWP:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

34359738368 bit

FLASH

8

1

8K

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F32G08AFABAWP-IT:B by Micron Technology

MT29F32G08AFABAWP-IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

R-PDSO-G48

e3

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

MT29F64G08AJABAWP:B by Micron Technology

MT29F64G08AJABAWP:B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F64G08AJABAWP-IT:B by Micron Technology

MT29F64G08AJABAWP-IT:B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

16K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

4K

PARALLEL

260

3/3.3

2.7

Not Qualified

YES

1.2 mm

512K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F16G08ABACAWP-ITZ:C by Micron Technology

MT29F16G08ABACAWP-ITZ:C

Micron Technology

MT29F16G08ABACAWP-ITZ:C by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85 °C. It has a memory density of 17179869184 bit and is suitable for industrial applications requiring reliable, high-speed data storage in compact devices.

R-PDSO-G48

e3

18.4 mm

17179869184 bit

FLASH

8

1

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

SST38VF6401B-70I/TV by Microchip Technology

SST38VF6401B-70I/TV

Microchip Technology

SST38VF6401B-70I/TV by Microchip: 4MX16 Flash Memory with 128 Sectors, 3V Operating Voltage. Ideal for industrial applications, offers 100000 Write/Erase Cycles and fast access time of 70ns. Supports NOR type interface with 4194304 words capacity in a small outline package.

70 ns

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

1

128

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

3/3.3

3

Not Qualified

YES

TS 16949

1.2 mm

32K

.00004 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

MT29F2G08ABAEAWP-ITX:E by Micron Technology

MT29F2G08ABAEAWP-ITX:E

Micron Technology

Micron Technology's MT29F2G08ABAEAWP-ITX:E is a 256MX8 SLC NAND flash memory with 2147483648 bit density. Operating at 3.3V, it has an industrial temperature grade of -40 to 85 °C. Suitable for parallel applications due to its CMOS technology and 0.5mm terminal pitch.

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-IT:D by Micron Technology

MT29F1G08ABADAWP-IT:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-ITX:D by Micron Technology

MT29F1G08ABADAWP-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F64G08AFAAAWP-IT:A by Micron Technology

MT29F64G08AFAAAWP-IT:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-IT:A is an 8GX8 MLC NAND flash memory with 3.3V supply, 8K page size, and 1M sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring high-density non-volatile memory with fast access times.

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

8K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

1M

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

NO

MLC NAND TYPE

12 mm

MT29F8G08ABABAWP-IT:B by Micron Technology

MT29F8G08ABABAWP-IT:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT28F800B3WG-9BET by Micron Technology

MT28F800B3WG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9B by Micron Technology

MT28F800B3WG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9TET by Micron Technology

MT28F800B3WG-9TET

Micron Technology

MT28F800B3WG-9TET by Micron Technology is a NOR flash memory with 512KX16 organization, 8388608 bit memory density, and 100000 Write/Erase Cycles endurance. It operates at -40 to 85 °C, has a programming voltage of 3V, and is suitable for industrial applications requiring fast access times and high reliability.

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9T by Micron Technology

MT28F800B3WG-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8BET by Micron Technology

MT28F800B5WG-8BET

Micron Technology

MT28F800B5WG-8BET by Micron Technology is a NOR type Flash Memory with 512Kx16 organization, operating at 5V. It features 80ns max access time, 524288 words capacity, and industrial temperature grade. Ideal for applications requiring fast data access and reliable non-volatile memory storage in harsh environments.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8B by Micron Technology

MT28F800B5WG-8B

Micron Technology

MT28F800B5WG-8B by Micron Technology is a NOR flash memory with 512KX16 organization, operating at 5V. It features 524288 words, 8388608 bit memory density, and 0.000005 Amp standby current. Ideal for commercial applications requiring fast access time and parallel interface.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8TET by Micron Technology

MT28F800B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8T by Micron Technology

MT28F800B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8BET by Micron Technology

MT28F400B5WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8B by Micron Technology

MT28F400B5WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8TET by Micron Technology

MT28F400B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Command User Interface: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8T by Micron Technology

MT28F400B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

235

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

12 mm

AT49BV8192A-11CI by Atmel

AT49BV8192A-11CI

Atmel

Atmel's AT49BV8192A-11CI is a 512Kx16 NOR flash memory with 85°C max temp, 110ns access time, and 3V programming voltage. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact 7mm square package.

110 ns

HARDWARE DATA PROTECTION

8

BOTTOM

YES

YES

S-PBGA-B48

e0

7 mm

8388608 bit

FLASH

16

1

1,2,1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

3/3.3

3

Not Qualified

1.25 mm

16K,8K,992K

.00005 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

YES

NOR TYPE

7 mm

AT49BV1614-90TI by Atmel

AT49BV1614-90TI

Atmel

AT49BV1614-90TI by Atmel is a 1MX16 NOR flash memory with 3V supply, operating at -40 to 85°C. It features asynchronous mode, 90ns access time, and 8K/32K/64K sector sizes. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact package.

90 ns

8

BOTTOM

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

1

8,2,30

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

YES

1.2 mm

8K,32K,64K

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm