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MT29F128G08CFAAAWPITZ:A

Micron Technology

MT29F128G08CFAAAWPITZ:A by Micron Technology

Micron Technology's MT29F128G08CFAAAWPITZ:A is a 16GX8 MLC NAND Flash Memory with 137.4Gb density, operating at 3.3V and -40 to 85°C. It features a small outline package, parallel interface, and is ideal for industrial applications requiring high memory capacity in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,751 parts In-Stock

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5,751

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Digiode

USA . 1,276 parts In-Stock

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1,276

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Cyclops Electronics Ltd

UK . 271 parts In-Stock

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271

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,736 parts In-Stock

1+ parts

$5.870

100+ parts

-

1k+ parts

$5.635

10k+ parts

$5.635

3,736

$5.870

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$5.635

$5.635

Ampacity Inc.

Singapore . 1,352 parts In-Stock

1+ parts

$16.000

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1,352

$16.000

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AZTECH Wire

Italy . 268 parts In-Stock

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$19.223

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268

$19.223

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Continental Prestige Electronics

USA . 5,431 parts In-Stock

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5,431

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Argo Parts USA

USA . 3,641 parts In-Stock

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3,641

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Perfect Parts

USA . 2,258 parts In-Stock

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2,258

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Corphita

USA . 2,252 parts In-Stock

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2,252

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Microchip USA

USA . 151 parts In-Stock

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151

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Corohmni

South Africa . 46 parts In-Stock

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46

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Bastille Electronics

Australia . 31 parts In-Stock

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31

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Overview

Experience unmatched performance and reliability with the MT29F128G08CFAAAWPITZ:A by Micron Technology, a leading manufacturer in the flash memory industry. This high-quality product offers exceptional value and benefits for a wide range of applications. Whether you're looking to enhance data storage capabilities or improve system performance, this flash memory device provides the perfect solution. Trust Micron Technology for cutting-edge technology and superior products that meet your needs. Upgrade your systems today with the MT29F128G08CFAAAWPITZ:A and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount compatibility allows for easy and convenient integration into various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of data transfer, offering flexibility and efficiency in data handling.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of electronic systems.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers fast read and write speeds, making it suitable for high-performance applications.

Technical Specifications

Flash Memory MT29F128G08CFAAAWPITZ:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Type:

MLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F128G08CFAAAWPITZ:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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