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MT29F128G08CFAAAWP:A

Micron Technology

MT29F128G08CFAAAWP:A by Micron Technology

Micron Technology's MT29F128G08CFAAAWP:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating in asynchronous mode. It features a memory density of 137.4Gb and is suitable for commercial applications requiring high-speed parallel data processing at temperatures ranging from 0 to 70°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 5,418 parts In-Stock

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Vyrian

USA . 3,039 parts In-Stock

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Digiode

USA . 2,096 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 282 parts In-Stock

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$5.453

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Andel Nordic

Denmark . 3,044 parts In-Stock

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$8.317

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$7.984

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$7.984

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$7.984

Ampacity Inc.

Singapore . 1,553 parts In-Stock

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$30.000

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A-Z Elektronik GmbH

Germany . 7,209 parts In-Stock

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Perfect Parts

USA . 1,092 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 222 parts In-Stock

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Microchip USA

USA . 113 parts In-Stock

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Kepictronics

USA . 64 parts In-Stock

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Overview

Elevate your device's performance with the MT29F128G08CFAAAWP:A by Micron Technology, a top-tier manufacturer known for its cutting-edge technology and reliable products. This flash memory chip is a game-changer in its category, offering lightning-fast speeds and ample storage capacity for all your data needs. With a high-quality build and versatile applications, this product ensures seamless operation and enhanced functionality. Upgrade your devices today and experience the value and benefits that only Micron Technology can deliver.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material in the package body makes this flash memory lightweight and durable, ideal for portable devices.

Surface Mount:

YES - With surface mount capability, this flash memory is easy to install on circuit boards, saving space and allowing for efficient assembly.

Package Shape:

RECTANGULAR - The rectangular package shape of this flash memory enables it to be easily integrated into various electronic devices with standard dimensions.

Operating Mode:

ASYNCHRONOUS - The asynchronous operating mode of this flash memory provides flexibility in data transfer, allowing for higher performance in a variety of applications.

Nominal Supply Voltage / Vsup (V):

3.3 - The 3.3V nominal supply voltage of this flash memory ensures compatibility with a wide range of systems and helps optimize power consumption.

No. of Terminals:

48 - With 48 terminals, this flash memory offers a higher level of connectivity and data transfer capabilities, making it suitable for demanding applications.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE - The small outline and thin profile design of this flash memory make it space-efficient and suitable for compact electronic devices.

Maximum Operating Temperature:

70 °C - With a maximum operating temperature of 70°C, this flash memory can withstand high heat conditions, ensuring reliability in extreme environments.

Organization:

16GX8 - The 16GX8 organization of this flash memory allows for efficient data storage and retrieval, making it ideal for high-performance computing applications.

Minimum Operating Temperature:

0 °C - The minimum operating temperature of 0°C ensures stable performance of this flash memory even in cold environments.

Technical Specifications

Flash Memory MT29F128G08CFAAAWP:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

MLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F128G08CFAAAWP:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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