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MT29F16G08ABABAWP-IT:B

Micron Technology

MT29F16G08ABABAWP-IT:B by Micron Technology

Micron Technology's MT29F16G08ABABAWP-IT:B is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It has a page size of 4K words and sector size of 512K words, suitable for industrial applications requiring fast access times and low standby current.

Median Price

$19.000

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

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$19.000

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Vyrian

USA . 7,206 parts In-Stock

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Chip Stock

USA . 3,500 parts In-Stock

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Digiode

USA . 1,708 parts In-Stock

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Component Sense

UK . 519 parts In-Stock

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519

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Electronic Treasures

USA . 125 parts In-Stock

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Eagle Technology Solutions

USA . 38 parts In-Stock

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NAC Semi

USA . 5 parts In-Stock

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5

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Goldney Electronics S.L.

Spain . 1 parts In-Stock

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1

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Cyclops Electronics Ltd

UK . 1 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,511 parts In-Stock

1+ parts

$2.340

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2,511

$2.340

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Semicontronic

India . 664 parts In-Stock

1+ parts

$3.000

100+ parts

$2.925

1k+ parts

$2.910

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664

$3.000

$2.925

$2.910

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$3.460

100+ parts

$3.149

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$2.837

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100

$3.460

$3.149

$2.837

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Ampacity Inc.

Singapore . 696 parts In-Stock

1+ parts

$17.000

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696

$17.000

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AZTECH Wire

Italy . 323 parts In-Stock

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$18.844

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323

$18.844

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Continental Prestige Electronics

USA . 2,957 parts In-Stock

1+ parts

$19.000

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$18.620

2,957

$19.000

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$18.620

Corohmni

South Africa . 520 parts In-Stock

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$19.000

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S.R.D Solutions

India . 42,000 parts In-Stock

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Lixinc

USA . 16,368 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,417 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,213 parts In-Stock

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Perfect Parts

USA . 6,726 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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RC Electronics

USA . 2,919 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$18.620

1k+ parts

$18.050

10k+ parts

$17.670

2,000

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$18.620

$18.050

$17.670

Argo Parts USA

USA . 1,060 parts In-Stock

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Futuretech Components

Singapore . 1,000 parts In-Stock

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Kepictronics

USA . 976 parts In-Stock

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976

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Microchip USA

USA . 424 parts In-Stock

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424

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Corphita

USA . 230 parts In-Stock

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Overview

Elevate your devices with the MT29F16G08ABABAWP-IT:B by Micron Technology, a top-tier flash memory solution that delivers unparalleled performance and reliability. As a leader in the industry, Micron Technology ensures superior quality and innovation in every product they offer. Ideal for industrial applications, this flash memory boasts a wide range of features such as fast access time, low power consumption, and a compact design that will optimize your system's efficiency. Trust Micron Technology to provide you with cutting-edge technology that exceeds expectations and takes your devices to the next level. Elevate your performance with the MT29F16G08ABABAWP-IT:B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it a reliable choice for storage devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible data transfer and access, enhancing the performance and efficiency of the flash memory.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory can withstand tough environmental conditions, ensuring reliability in various applications.

Memory IC Type: FLASH

Being a flash memory device, it offers fast read and write speeds, making it suitable for use in high-performance storage solutions.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this flash memory is built to operate reliably in harsh environments with extended temperature ranges.

Technical Specifications

Flash Memory MT29F16G08ABABAWP-IT:B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

48

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

512K

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABABAWP-IT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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