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MT29F128G08CFAAAWPIT:A

Micron Technology

MT29F128G08CFAAAWPIT:A by Micron Technology

Micron Technology's MT29F128G08CFAAAWPIT:A is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 3.3V and -40 to 85°C. It features a small outline package, parallel interface, and industrial temperature grade suitable for various embedded applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,696 parts In-Stock

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8,696

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Digiode

USA . 1,797 parts In-Stock

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1,797

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,407 parts In-Stock

1+ parts

$10.214

100+ parts

-

1k+ parts

$9.806

10k+ parts

$9.806

1,407

$10.214

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$9.806

$9.806

Ampacity Inc.

Singapore . 1,079 parts In-Stock

1+ parts

$12.000

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1,079

$12.000

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AZTECH Wire

Italy . 797 parts In-Stock

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$18.668

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797

$18.668

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Continental Prestige Electronics

USA . 3,571 parts In-Stock

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3,571

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Argo Parts USA

USA . 3,131 parts In-Stock

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Corphita

USA . 2,259 parts In-Stock

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2,259

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Aranea Global

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 300 parts In-Stock

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300

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Overview

Elevate your devices to new heights with the MT29F128G08CFAAAWPIT:A by Micron Technology. As a leading manufacturer in the industry, Micron Technology delivers top-quality flash memory products that are essential for a wide range of applications. With its small outline, thin profile package style and industrial temperature grade, this MLC NAND type memory IC offers reliability and performance like no other. Experience seamless operation and increased efficiency with this innovative product, designed to meet your every need. Choose Micron Technology for unparalleled value and excellence in technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the memory chip, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 3.3

The optimal voltage supply ensures reliable performance and efficient power usage for the flash memory.

Maximum Operating Temperature: 85 °C

The high operating temperature range allows the flash memory to function in various environments without compromising performance.

Memory Density: 137438953472 bit

With a high memory density, this flash memory chip can store a large amount of data efficiently, making it ideal for applications requiring high storage capacity.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making this flash memory a reliable and energy-efficient choice.

Technical Specifications

Flash Memory MT29F128G08CFAAAWPIT:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3

Length:

18.4 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

MLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F128G08CFAAAWPIT:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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