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HVSON EEPROM 62

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
24FC64-I/MF by Microchip Technology

24FC64-I/MF

Microchip Technology

24FC64-I/MF by Microchip Technology is an EEPROM with 8KX8 organization, 1 MHz clock frequency, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and uses I2C serial bus for applications requiring reliable non-volatile memory storage.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-N8

e3

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,25

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24FC64T-I/MF by Microchip Technology

24FC64T-I/MF

Microchip Technology

24FC64T-I/MF by Microchip Technology is an EEPROM with 8Kx8 organization, 65536-bit memory density, and 1000000 write/erase cycles endurance. It operates in industrial temperature grade, has a max clock frequency of 1 MHz, and uses I2C serial bus type. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-N8

e3

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,25

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.65 mm

DUAL

3 mm

5 ms

HARDWARE

CAT24C08HU4E-GT3 by Onsemi

CAT24C08HU4E-GT3

Onsemi

CAT24C08HU4E-GT3 by Onsemi is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles. It operates at a max clock frequency of 0.4 MHz and is ideal for automotive applications due to its temperature grade.

.4 MHz

100

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.55 mm

I2C

.000005 Amp

EEPROMs

2 mA

5.5 V

1.8 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

93LC66AT-I/MNY by Microchip Technology

93LC66AT-I/MNY

Microchip Technology

93LC66AT-I/MNY by Microchip Technology is a 512x8 EEPROM with serial bus type MICROWIRE. It operates at 2 MHz clock frequency, has 1000000 write/erase cycles endurance, and supports software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

TOTEM POLE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

YES

NO

TS 16949

.8 mm

MICROWIRE

.000001 Amp

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

YES

2 mm

6 ms

SOFTWARE

93LC66BT-I/MNY by Microchip Technology

93LC66BT-I/MNY

Microchip Technology

93LC66BT-I/MNY by Microchip Technology is a 256x16 EEPROM with 1000000 Write/Erase Cycles. Operating at 2 MHz, it has a memory density of 4096 bit and supports MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

16

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

TOTEM POLE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

YES

NO

TS 16949

.8 mm

MICROWIRE

.000001 Amp

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

YES

2 mm

6 ms

SOFTWARE

CAT25010VP2IGT3D by Onsemi

CAT25010VP2IGT3D

Onsemi

CAT25010VP2IGT3D by Onsemi is a 1024-bit EEPROM with SPI serial bus, 128x8 organization, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 10 MHz, and is ideal for industrial applications requiring low power consumption.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.8 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

CAT25020VP2IGT3D by Onsemi

CAT25020VP2IGT3D

Onsemi

CAT25020VP2IGT3D by Onsemi is a 256x8 EEPROM with SPI serial bus, 2048-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85 °C, it has a max clock frequency of 10 MHz and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.8 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

CAT25040VP2IGT3D by Onsemi

CAT25040VP2IGT3D

Onsemi

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.8 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

M24512-DRMB6TG by STMicroelectronics

M24512-DRMB6TG

STMicroelectronics

STMicroelectronics M24512-DRMB6TG is an EEPROM with 64KX8 organization, operating at 2.5V, and featuring I2C control byte 1010MMMR. It has a small outline package style suitable for industrial temperature grades applications. With endurance of 1M cycles, it offers reliable data storage in various electronic devices.

1 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24512-RMB6TG by STMicroelectronics

M24512-RMB6TG

STMicroelectronics

M24512-RMB6TG by STMicroelectronics is an EEPROM with 64KX8 organization, I2C control byte 1010MMMR, and 1 MHz max clock frequency. It is used in industrial applications for data storage due to its 1000000 write/erase cycles endurance and serial bus type I2C interface.

1 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24512-RMC6TG by STMicroelectronics

M24512-RMC6TG

STMicroelectronics

M24512-RMC6TG by STMicroelectronics is a 64KX8 EEPROM with a memory density of 524288 bit. It operates in synchronous mode at a max clock frequency of 1 MHz and has a small outline package shape suitable for industrial applications.

1 MHz

R-PDSO-N8

3 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

5

.6 mm

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

CAT24C02HU4IGT3A by Onsemi

CAT24C02HU4IGT3A

Onsemi

CAT24C02HU4IGT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers 1000000 write/erase cycles, I2C serial bus type, and a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

CAT24C02VP2IGT3A by Onsemi

CAT24C02VP2IGT3A

Onsemi

CAT24C02VP2IGT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.8 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M95512-RMC6TG by STMicroelectronics

M95512-RMC6TG

STMicroelectronics

STMicroelectronics M95512-RMC6TG is a 64KX8 EEPROM with SPI interface, operating at 5 MHz. It has 1000000 Write/Erase Cycles endurance and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring low power consumption and high reliability.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000003 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

HARDWARE/SOFTWARE

M95020-RMC6TG by STMicroelectronics

M95020-RMC6TG

STMicroelectronics

STMicroelectronics M95020-RMC6TG is a 2Kx1 EEPROM with SPI serial bus, 2048-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C for industrial applications, with a max clock frequency of 5 MHz. The package is small outline rectangular, suitable for surface mount assembly.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

2048 bit

EEPROM

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE/SOFTWARE

M95512-RMB6TG by STMicroelectronics

M95512-RMB6TG

STMicroelectronics

M95512-RMB6TG by STMicroelectronics is an EEPROM with 64KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates at a max clock frequency of 5 MHz and has a memory density of 524288 bit. Ideal for industrial applications requiring reliable non-volatile memory storage.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

SPI

.000005 Amp

EEPROMs

8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

M24C08-FMC5TG by STMicroelectronics

M24C08-FMC5TG

STMicroelectronics

M24C08-FMC5TG by STMicroelectronics is a 1Kx8 EEPROM with I2C interface, ideal for low-power applications. It operates b/w 1.7V and 5.5V, supports up to 1M write/erase cycles, and features a compact SOIC package. Its max temp is 85 °C, making it suitable for various electronic devices.

1

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-20 Cel

1KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.7 V

5

YES

CMOS

OTHER

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24C16-FMB5TG by STMicroelectronics

M24C16-FMB5TG

STMicroelectronics

M24C16-FMB5TG from STMicroelectronics is a 2Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, features hardware write protection, and supports up to 1M write/erase cycles. Ideal for compact applications requiring reliable data storage in a small footprint.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

3 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-20 Cel

2KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.7 V

2.5

YES

CMOS

OTHER

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M24LR64-RMB6T/2 by STMicroelectronics

M24LR64-RMB6T/2

STMicroelectronics

M24LR64-RMB6T/2 by STMicroelectronics is a compact EEPROM with a 65536-bit density, operating b/w 1.8V and 5.5V. It features I2C communication, a max clock frequency of 400kHz, and offers software write protection for reliable data storage. Ideal for industrial applications requiring robust memory solutions in tight spaces.

8

.4 MHz

40

1000000 Write/Erase Cycles

10100DDR

R-PDSO-N8

e4

3 mm

65536 bit

EEPROM

32

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX32

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

I2C

.00003 Amp

EEPROMs

.7 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

SOFTWARE

25AA512T-I/MF by Microchip Technology

25AA512T-I/MF

Microchip Technology

25AA512T-I/MF by Microchip Technology is a SPI EEPROM with 64KX8 organization, operating at 5V. It offers 1000000 Write/Erase Cycles endurance and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

2.5V TO 5.5V @ 0.1MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2.5/5

5

Not Qualified

AEC-Q100

1 mm

SPI

.000001 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE/SOFTWARE

25LC512-I/MF by Microchip Technology

25LC512-I/MF

Microchip Technology

25LC512-I/MF by Microchip Technology is a SPI EEPROM with 64KX8 organization, 20 MHz clock frequency, and 1000000 write/erase cycles. It operates at -40 to 85 °C, suitable for industrial applications requiring reliable non-volatile memory storage in a compact package.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2.5/5

5

Not Qualified

AEC-Q100

1 mm

SPI

.00001 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE/SOFTWARE

25LC512T-I/MF by Microchip Technology

25LC512T-I/MF

Microchip Technology

25LC512T-I/MF by Microchip Technology is a 64KX8 EEPROM with SPI interface, 20 MHz clock frequency, and 1000000 Write/Erase Cycles. It operates at -40 to 85 °C, suitable for industrial applications requiring reliable non-volatile memory storage in compact form factor.

2.5V TO 5.5V @ 10MHz

20 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2.5/5

5

Not Qualified

AEC-Q100

1 mm

SPI

.00001 Amp

EEPROMs

10 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE/SOFTWARE

11AA020T-I/MNY by Microchip Technology

11AA020T-I/MNY

Microchip Technology

11AA020T-I/MNY by Microchip Technology is an EEPROM with 256x8 organization, 2048-bit memory density, and 1-WIRE serial bus type. It operates at a max clock frequency of 1 MHz and has a write protection feature for software applications. Ideal for industrial use with a temperature range of -40 to 85°C.

1 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

.8 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

NO

2 mm

10 ms

SOFTWARE

11LC010T-I/MNY by Microchip Technology

11LC010T-I/MNY

Microchip Technology

11LC010T-I/MNY by Microchip Technology is an EEPROM with 128x8 organization, operating at 1 MHz clock frequency. It has a memory density of 1024 bit and can endure up to 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

TOTEM POLE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

Not Qualified

NO

NO

TS 16949

.8 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

NO

2 mm

10 ms

SOFTWARE

M24C04-FMB5TG by STMicroelectronics

M24C04-FMB5TG

STMicroelectronics

M24C04-FMB5TG from STMicroelectronics is a 4096-bit EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range (1.8-5V), operates at temperatures from -20 °C to 85 °C, and supports up to 1M write/erase cycles. Ideal for compact applications requiring reliable data storage in small electronic devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-20 Cel

512X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.7 V

2.5

YES

CMOS

OTHER

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M24C08-FMB5TG by STMicroelectronics

M24C08-FMB5TG

STMicroelectronics

M24C08-FMB5TG from STMicroelectronics is a 1Kx8 EEPROM with I2C interface, ideal for low-power applications. It operates at 1.8-5V, supports up to 1M write/erase cycles, and features a compact SOIC package. Its max temp is 85 °C, making it suitable for various electronic devices.

1

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-20 Cel

1KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.7 V

5

YES

CMOS

OTHER

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

24LC01BT-E/MNY by Microchip Technology

24LC01BT-E/MNY

Microchip Technology

24LC01BT-E/MNY by Microchip Technology is an EEPROM with 128x8 organization, 1024-bit memory density, and AEC-Q100 screening for automotive applications. It operates at 5V with a max clock frequency of 0.4 MHz and offers 1,000,000 write/erase cycles endurance.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

Not Qualified

AEC-Q100

.8 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24LC02BT-E/MNY by Microchip Technology

24LC02BT-E/MNY

Microchip Technology

24LC02BT-E/MNY by Microchip Technology is an EEPROM with 256x8 organization, 2048-bit memory density, and AEC-Q100 screening level. It operates at 5V, has a max clock frequency of 0.4 MHz, and is suitable for automotive applications due to its temperature grade.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

.8 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

CAT25640HU3I-GT3 by Onsemi

CAT25640HU3I-GT3

Onsemi

CAT25640HU3I-GT3 by Onsemi is an 8KX8 EEPROM with SPI serial bus, 20 MHz clock frequency, and 1000000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in a compact, low-power package.

100 YEAR DATA RETENTION

20 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.55 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE/SOFTWARE

24AA08T-I/MNY by Microchip Technology

24AA08T-I/MNY

Microchip Technology

24AA08T-I/MNY by Microchip Tech is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles. It operates in industrial temperature grade, has I2C serial bus type, and offers hardware write protection. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

.8 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

M24128-BFMB6TG by STMicroelectronics

M24128-BFMB6TG

STMicroelectronics

M24128-BFMB6TG by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode, ideal for industrial applications. It operates at a nominal voltage of 1.8V and supports I2C communication. With a max temp of 85 °C and endurance of 1M write/erase cycles, it's reliable for data storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

e4

3 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24C32-FMB5TG by STMicroelectronics

M24C32-FMB5TG

STMicroelectronics

M24C32-FMB5TG by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at a nominal voltage of 1.8V and supports up to 1M write/erase cycles. Its compact design features an ultra-thin profile of just 0.6mm height.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

3 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-20 Cel

4KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

AEC-Q100

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M24C64-FMB6TG by STMicroelectronics

M24C64-FMB6TG

STMicroelectronics

M24C64-FMB6TG from STMicroelectronics is a compact 64Kb EEPROM with I2C interface, ideal for industrial applications. It operates at 1.8-5.5V, features a max clock frequency of 400kHz, and offers 1M write/erase cycles. Its small outline design ensures efficient space utilization in devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

3 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M24C64-RMB6TG by STMicroelectronics

M24C64-RMB6TG

STMicroelectronics

M24C64-RMB6TG by STMicroelectronics is a compact EEPROM with 8Kx8 organization, operating b/w 1.8V and 5.5V. It features a max clock frequency of 400kHz and offers hardware write protection for reliable data storage. Ideal for industrial applications requiring robust memory solutions.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

3 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M95128-RMB6TG by STMicroelectronics

M95128-RMB6TG

STMicroelectronics

STMicroelectronics M95128-RMB6TG is a 16KX8 EEPROM with SPI serial bus, 131072-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85 °C, it has a max clock frequency of 2 MHz and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

2 MHz

40

1000000 Write/Erase Cycles

R-XDSO-N8

e4

3 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

CAT34C02HU3I-GT4A by Onsemi

CAT34C02HU3I-GT4A

Onsemi

CAT34C02HU3I-GT4A by Onsemi is a 256-bit EEPROM with I2C control byte. It operates at 5V, has 16x16 organization, and offers hardware/software write protection. Ideal for industrial applications, it features a small outline package with very thin profile and nickel palladium gold terminal finish.

100 YEAR DATA RETENTION

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

256 bit

EEPROM

16

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE/SOFTWARE

CAT34C02HU4IGT4A by Onsemi

CAT34C02HU4IGT4A

Onsemi

CAT34C02HU4IGT4A by Onsemi is an EEPROM with 256-bit memory density, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications, it has a small outline package with a very thin profile and operates in synchronous mode up to 0.4 MHz clock frequency.

100 YEAR DATA RETENTION

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

256 bit

EEPROM

16

1

1

1

8

16 words

16

SYNCHRONOUS

85 Cel

-40 Cel

16X16

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

16

SERIAL

260

1.8/5

Not Qualified

YES

NO

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

34AA02T-E/MNY by Microchip Technology

34AA02T-E/MNY

Microchip Technology

34AA02T-E/MNY by Microchip Technology is an EEPROM with 256x8 organization, operating at 2.5V, and featuring I2C control byte 1010DDDR. Ideal for automotive applications, it offers a max clock frequency of 0.4 MHz, endurance of 1M cycles, and operates in the temperature range of -40 to 125°C.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

.8 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE/SOFTWARE

24LC08B-E/MC by Microchip Technology

24LC08B-E/MC

Microchip Technology

24LC08B-E/MC by Microchip Technology is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles. Operating in the automotive temperature grade range of -40 to 125 °C, it features I2C serial bus type for applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-N8

e3

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24LC08BT-E/MC by Microchip Technology

24LC08BT-E/MC

Microchip Technology

24LC08BT-E/MC by Microchip Technology is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles. Operating in automotive grade at -40 to 125 °C, it uses I2C serial bus for applications requiring reliable data storage in harsh environments.

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-N8

e3

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24AA256T-I/MF by Microchip Technology

24AA256T-I/MF

Microchip Technology

24AA256T-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 2.5V and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz, 1000000 write/erase cycles endurance, and -40 to 85 °C temperature range. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24FC256-I/MF by Microchip Technology

24FC256-I/MF

Microchip Technology

24FC256-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 write/erase cycles. It operates in synchronous mode at a max clock frequency of 1 MHz via I2C serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC256-E/MF by Microchip Technology

24LC256-E/MF

Microchip Technology

24LC256-E/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V, and featuring I2C serial bus type. Ideal for automotive applications due to AEC-Q100 screening level, it offers 1mm seated height and 1000000 write/erase cycles endurance.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24LC256T-I/MF by Microchip Technology

24LC256T-I/MF

Microchip Technology

24LC256T-I/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V, and featuring I2C control byte 1010DDDR. It has a memory density of 262144 bit, endurance of 1M cycles, and operates in industrial temperature range. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

4.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

24AA256T-E/MF by Microchip Technology

24AA256T-E/MF

Microchip Technology

24AA256T-E/MF by Microchip Technology is an EEPROM with 32KX8 organization, operating at 2.5V and featuring a max clock frequency of 0.4 MHz. Ideal for automotive applications, it offers 1000000 Write/Erase cycles endurance, I2C serial bus type, and -40 to 125 °C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

6 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

5 mm

5 ms

HARDWARE

M34C02-RMB6TG by STMicroelectronics

M34C02-RMB6TG

STMicroelectronics

M34C02-RMB6TG by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating b/w -40 °C to 85 °C. It features I2C interface for easy integration and offers hardware/software write protection. Ideal for industrial applications, it supports up to 1M write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

3 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

I2C

.0000005 Amp

EEPROMs

1 mA

5.5 V

1.8 V

2.2

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

10 ms

HARDWARE/SOFTWARE

25LC1024T-E/MF by Microchip Technology

25LC1024T-E/MF

Microchip Technology

25LC1024T-E/MF by Microchip Technology is a 128KX8 EEPROM with AEC-Q100 screening. Operating at 5V, it offers 10 MHz clock frequency and supports SPI serial bus. Ideal for automotive applications, it has 1mm max seated height and endures 1M Write/Erase cycles.

200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1 mm

SPI

.00002 Amp

Flash Memories

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

NOR TYPE

5 mm

6 ms

HARDWARE/SOFTWARE

M24C02-RMB6TG by STMicroelectronics

M24C02-RMB6TG

STMicroelectronics

STMicroelectronics M24C02-RMB6TG is an EEPROM with 256x8 organization, I2C serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE