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25AA512T-I/MF

Microchip Technology

25AA512T-I/MF by Microchip Technology

25AA512T-I/MF by Microchip Technology is a SPI EEPROM with 64KX8 organization, operating at 5V. It offers 1000000 Write/Erase Cycles endurance and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,554 parts In-Stock

1+ parts

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8,554

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VNN

France . 50 parts In-Stock

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50

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 811 parts In-Stock

1+ parts

$3.961

100+ parts

-

1k+ parts

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811

$3.961

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Ampacity Inc.

Singapore . 604 parts In-Stock

1+ parts

$11.000

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604

$11.000

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AZTECH Wire

Italy . 809 parts In-Stock

1+ parts

$13.320

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809

$13.320

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Continental Prestige Electronics

USA . 2,050 parts In-Stock

1+ parts

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2,050

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Argo Parts USA

USA . 576 parts In-Stock

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576

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Netroflash

USA . 500 parts In-Stock

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500

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West Coast Incorporated

USA . 36 parts In-Stock

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36

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Overview

Unlock the power of reliable data storage with the 25AA512T-I/MF EEPROM by Microchip Technology. Built to last and designed for industrial applications, this small yet powerful memory IC offers 524288 bits of memory density and up to 1000000 write/erase cycles, ensuring your data is secure. With its SPI serial bus type and hardware/software write protection, you can trust your information will be safe and easily accessible. Say goodbye to data loss worries and hello to seamless performance with Microchip Technology's cutting-edge EEPROM technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, making it suitable for various environments and applications.

Surface Mount: YES

Easy to integrate onto circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Allows for precise timing and synchronization with other system components, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

Runs efficiently at a standard voltage level, ensuring stable operation.

Write Protection: HARDWARE/SOFTWARE

Offers flexibility in protecting the data stored in the EEPROM, preventing accidental or unauthorized modifications.

Endurance: 1000000 Write/Erase Cycles

Withstands a high number of write and erase cycles, ensuring long-term reliability and data retention.

Technical Specifications

EEPROM 25AA512T-I/MF attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

2.5V TO 5.5V @ 0.1MHz

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Length:

6 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

25AA512T-I/MF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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