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5 Diodes & Rectifiers 101

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
MBR5H100MFST3G by Onsemi

MBR5H100MFST3G

Onsemi

MBR5H100MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 100V. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. The diode is surface mountable, has a small outline package style, and features matte tin terminal finish.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

STTH4R06DEE-TR by STMicroelectronics

STTH4R06DEE-TR

STMicroelectronics

STTH4R06DEE-TR by STMicroelectronics is a single rectifier diode with ultra-fast recovery time of 0.05 us and max output current of 4A. It operates at a max temperature of 150 °C, making it suitable for applications requiring high-speed performance in electronic circuits.

SOFT FACTOR IS 2

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

R-PDSO-N5

e3

1

60 A

1

1

5

150 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

3 uA

.05 us

Rectifier Diodes

YES

Matte Tin (Sn)

NO LEAD

DUAL

30

STTH5L04DEE-TR by STMicroelectronics

STTH5L04DEE-TR

STMicroelectronics

STTH5L04DEE-TR by STMicroelectronics is a single rectifier diode with ultra-fast recovery time of 0.06 us and max output current of 5A. It operates at up to 150 °C, making it suitable for high-temperature applications like power supplies and inverters. The diode has a max reverse voltage of 400V, ideal for various electronic circuits requiring efficient rectification.

ULTRA FAST RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

S-PDSO-N5

e3

1

60 A

1

1

5

150 Cel

5 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

400 V

2.5 uA

.06 us

Rectifier Diodes

YES

Matte Tin (Sn)

NO LEAD

DUAL

30

BYM300A120DN2HOSA1 by Infineon Technologies

BYM300A120DN2HOSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 5; Surface Mount: NO; Package Shape: RECTANGULAR;

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

R-XUFM-X5

1

1

5

150 Cel

450 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

1000 W

Not Qualified

.55 us

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

BYM600A170DN2HOSA1 by Infineon Technologies

BYM600A170DN2HOSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 5; Surface Mount: NO; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

R-XUFM-X5

1

1

5

150 Cel

600 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

1400 W

Not Qualified

1 us

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

DZ800S17K3HOSA1 by Infineon Technologies

DZ800S17K3HOSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 5; Surface Mount: NO; Package Shape: RECTANGULAR;

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

R-XUFM-X5

1

1

5

800 A

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

Not Qualified

1700 V

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MBR440MFST1G by Onsemi

MBR440MFST1G

Onsemi

MBR440MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.65V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This diode has a max reverse voltage of 40V and non-repetitive peak forward current of 40A, ideal for various electronic circuits.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.65 V

R-PDSO-F5

e3

1

40 A

1

1

5

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

800 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR460MFST3G by Onsemi

MBR460MFST3G

Onsemi

MBR460MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.74V. It operates efficiently at temperatures ranging from -55 to 175 °C, making it suitable for various applications requiring high-speed switching and low power loss in compact designs.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.74 V

R-PDSO-F5

e3

1

40 A

1

1

5

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

200 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR5100MFST1G by Onsemi

MBR5100MFST1G

Onsemi

MBR5100MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and max reverse voltage of 100V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. This single-configured diode has a small outline package style and matte tin terminal finish for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.98 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

10 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR5100MFST3G by Onsemi

MBR5100MFST3G

Onsemi

MBR5100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 5A output current, and 0.98V forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 175°C. This single-configured diode has a small outline package with matte tin finish and dual terminals.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.98 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

10 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR540MFST1G by Onsemi

MBR540MFST1G

Onsemi

MBR540MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and a max repetitive peak reverse voltage of 40V. It operates efficiently with an operating temperature range from -40°C to 175°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. The diode's small outline package style, matte tin terminal finish, and dual terminal position make it ideal for surface mount applications.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.58 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-40 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

2000 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR540MFST3G by Onsemi

MBR540MFST3G

Onsemi

MBR540MFST3G by Onsemi is a Schottky rectifier diode with 40V reverse voltage and 5A output current. It operates b/w -40 to 175 °C, featuring a max forward voltage of 0.58V. Ideal for efficiency applications, this diode has a matte tin finish and dual terminal position in a small outline package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.58 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-40 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

2000 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR560MFST1G by Onsemi

MBR560MFST1G

Onsemi

MBR560MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 5A and forward voltage of 0.78V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max reverse voltage of 60V and non-repetitive forward current of 100A, it offers reliable performance in various electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.78 V

R-PDSO-F5

e3

1

100 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR560MFST3G by Onsemi

MBR560MFST3G

Onsemi

MBR560MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 60V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high-speed switching and low forward voltage drop. The diode's small outline package with matte tin terminal finish enables surface mount installation for compact electronic designs.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.78 V

R-PDSO-F5

e3

1

100 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVB440MFST1G by Onsemi

NRVB440MFST1G

Onsemi

NRVB440MFST1G by Onsemi is a Schottky rectifier diode with 40V reverse voltage, 4A output current, and 800uA reverse current. It is used for efficiency applications in a small outline package with dual terminals and matte tin finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.65 V

R-PDSO-F5

e3

1

40 A

1

1

5

175 Cel

-55 Cel

4 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

800 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB5100MFST3G by Onsemi

NRVB5100MFST3G

Onsemi

NRVB5100MFST3G by Onsemi is a Schottky rectifier diode with a max reverse current of 10uA and forward voltage of 0.98V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max repetitive peak reverse voltage of 100V and output current of 5A, it is ideal for various electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.98 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

10 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS8100MFST3G by Onsemi

NRVTS8100MFST3G

Onsemi

NRVTS8100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 8A output current, and 0.73V forward voltage. It is used for efficiency applications in automotive industry due to AEC-Q101 standard compliance.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.73 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

70 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

ABR1045DNPTR-G1 by Diodes Incorporated

ABR1045DNPTR-G1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW NOISE

GENERAL PURPOSE

CATHODE

SILICON

RECTIFIER DIODE

.47 V

R-PDSO-F5

200 A

1

5

150 Cel

-65 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

45 V

300 uA

YES

FLAT

DUAL

MBR10100MFST3G by Onsemi

MBR10100MFST3G

Onsemi

MBR10100MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high-speed switching and low forward voltage drop. The diode's small outline package with surface mount capability enhances its versatility in electronic circuit designs.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR1045MFST1G by Onsemi

MBR1045MFST1G

Onsemi

MBR1045MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 10A and a max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR1045MFST3G by Onsemi

MBR1045MFST3G

Onsemi

MBR1045MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a surface-mount package style for easy installation.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR1240MFST1G by Onsemi

MBR1240MFST1G

Onsemi

MBR1240MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max repetitive peak reverse voltage of 40V. It operates efficiently at temperatures ranging from -55 °C to 150°C, making it suitable for various applications requiring high power efficiency. This diode is designed for surface mount installation in electronic devices.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR1240MFST3G by Onsemi

MBR1240MFST3G

Onsemi

MBR1240MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and a max forward voltage of 0.68V. It operates efficiently in temperatures ranging from -55 to 150 °C, making it suitable for various applications requiring high power efficiency. This diode has a package style of small outline and features surface mount technology for easy installation.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR2045EMFST1G by Onsemi

MBR2045EMFST1G

Onsemi

MBR2045EMFST1G by Onsemi is a Schottky rectifier diode with 45V max repetitive peak reverse voltage, 20A max output current, and 0.64V max forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 150°C.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.64 V

R-PDSO-F5

e3

1

400 A

1

1

5

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

400 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR30H100MFST1G by Onsemi

MBR30H100MFST1G

Onsemi

MBR30H100MFST1G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 30A output current, and 0.9V forward voltage. It is used for efficiency applications in temperatures ranging from -55°C to 175°C. The diode has a plastic/epoxy package, matte tin finish, and dual terminals for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

300 A

1

1

5

175 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR830MFST1G by Onsemi

MBR830MFST1G

Onsemi

MBR830MFST1G by Onsemi is a Schottky rectifier diode with 30V max reverse voltage and 8A max output current. It operates b/w -40 to 150 °C, ideal for efficiency applications. This single-configured diode has a matte tin finish, flat terminal form, and small outline package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

200 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR830MFST3G by Onsemi

MBR830MFST3G

Onsemi

MBR830MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.7V. It operates efficiently in temperatures ranging from -40 to 150 °C, making it suitable for various applications requiring high-speed switching and low power loss. With a max repetitive peak reverse voltage of 30V, this diode is ideal for use in electronics where reliability and performance are crucial.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR860MFST1G by Onsemi

MBR860MFST1G

Onsemi

MBR860MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 60V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. This diode is designed for surface mount installation in electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR860MFST3G by Onsemi

MBR860MFST3G

Onsemi

MBR860MFST3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 175 °C. This single-config diode has a small outline package with dual terminals and surface mount capability.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

TIN

FLAT

DUAL

30

MBR8H100MFST3G by Onsemi

MBR8H100MFST3G

Onsemi

MBR8H100MFST3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.9V and max output current of 8A. It is used for efficiency applications, has a max operating temperature of 175°C, and comes in a small outline package with dual terminals.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

2 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVB10100MFST3G by Onsemi

NRVB10100MFST3G

Onsemi

NRVB10100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage and 10A output current. It operates b/w -55 to 175 °C, making it ideal for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminals for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB1045MFST3G by Onsemi

NRVB1045MFST3G

Onsemi

NRVB1045MFST3G by Onsemi is a Schottky rectifier diode with 45V max repetitive peak reverse voltage and 10A max output current. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-config diode has a small outline package style and matte tin terminal finish for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB1240MFST3G by Onsemi

NRVB1240MFST3G

Onsemi

NRVB1240MFST3G by Onsemi is a Schottky rectifier diode with 40V reverse voltage, 12A output current, and 0.68V forward voltage. It operates b/w -55 to 150 °C and has a max reverse current of 500 uA. Ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB830MFST1G by Onsemi

NRVB830MFST1G

Onsemi

NRVB830MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max reverse current of 200uA. It operates b/w -40 to 150°C, ideal for efficiency applications. This single-configured diode has a package style of small outline, suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB830MFST3G by Onsemi

NRVB830MFST3G

Onsemi

NRVB830MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max reverse voltage of 30V. It is designed for efficiency applications, operates b/w -40 to 150 °C, and features a surface-mount package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB860MFST1G by Onsemi

NRVB860MFST1G

Onsemi

NRVB860MFST1G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is designed for efficiency applications, operates b/w -55 to 175 °C, and has a max reverse current of 150 uA.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

150 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB860MFST3G by Onsemi

NRVB860MFST3G

Onsemi

NRVB860MFST3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is ideal for efficiency applications, operates b/w -55 to 175 °C, and has a max reverse current of 150 uA.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

150 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB8H100MFST3G by Onsemi

NRVB8H100MFST3G

Onsemi

NRVB8H100MFST3G by Onsemi is a Schottky rectifier diode with a max reverse current of 2uA and forward voltage of 0.9V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max output current of 8A and peak reverse voltage of 100V, it is ideal for various electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

2 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS12120MFST1G by Onsemi

NRVTS12120MFST1G

Onsemi

NRVTS12120MFST1G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 12A output current, and 0.83V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 150 °C. The diode has a max reverse current of 75uA and comes in a small outline package with matte tin terminals.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

75 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS12120MFST3G by Onsemi

NRVTS12120MFST3G

Onsemi

NRVTS12120MFST3G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 12A output current, and 0.83V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 150 °C. The diode has a max reverse current of 75uA and is AEC-Q101 compliant for automotive use.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

75 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS12120MFST1G by Onsemi

NTS12120MFST1G

Onsemi

NTS12120MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a package style of small outline and matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

75 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS12120MFST3G by Onsemi

NTS12120MFST3G

Onsemi

NTS12120MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max reverse voltage of 120V. It operates b/w -55 to 150 °C, suitable for efficiency applications. This single-configured diode has a surface-mount package style with tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

75 uA

YES

SCHOTTKY

Tin (Sn)

FLAT

DUAL

30

SBRT25M60SLP-13 by Diodes Incorporated

SBRT25M60SLP-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, HIGH RELIABILITY

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-N5

e3

1

220 A

1

1

5

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

150 uA

YES

MATTE TIN

NO LEAD

DUAL

30

SBRT25U50SLP-13 by Diodes Incorporated

SBRT25U50SLP-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, HIGH RELIABILITY

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.52 V

R-PDSO-N5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

50 V

500 uA

YES

MATTE TIN

NO LEAD

DUAL

30

NRVTS12120EMFST3G by Onsemi

NRVTS12120EMFST3G

Onsemi

NRVTS12120EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and a max reverse current of 55uA. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 120V and is designed for surface mount installation in small outline packages.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

55 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS10100EMFST1G by Onsemi

NTS10100EMFST1G

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.72 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS10100EMFST3G by Onsemi

NTS10100EMFST3G

Onsemi

NTS10100EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminals.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.72 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS12120EMFST1G by Onsemi

NTS12120EMFST1G

Onsemi

NTS12120EMFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max forward voltage of 0.83V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max repetitive peak reverse voltage of 120V, it is ideal for various electronic circuits requiring low power loss.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

55 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30