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NRVTS12120MFST1G

Onsemi

NRVTS12120MFST1G by Onsemi

NRVTS12120MFST1G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 12A output current, and 0.83V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 150 °C. The diode has a max reverse current of 75uA and comes in a small outline package with matte tin terminals.

Median Price

$0.522

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 380 parts In-Stock

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$0.522

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$0.433

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$0.386

380

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$0.522

$0.433

$0.386

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

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Digiode

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Cyclops Electronics Ltd

UK . 280 parts In-Stock

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Microchip USA

USA . 2,606 parts In-Stock

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$2.924

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AZTECH Wire

Italy . 787 parts In-Stock

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$18.660

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iodParts Technologies Inc.

India . 188,000 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 6,918 parts In-Stock

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SupplyDigital Components

Austria . 1,842 parts In-Stock

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Corphita

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UHIMA Technologies

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GreenTree Electronics

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Overview

Discover the NRVTS12120MFST1G by Onsemi, a top-tier manufacturer known for producing high-quality diodes & rectifiers. This small outline package is perfect for applications requiring efficiency, with a maximum output current of 12A and a maximum repetitive peak reverse voltage of 120V. With its Schottky technology and low forward voltage of 0.83V, this rectifier diode offers exceptional performance. Trust Onsemi to provide reliable components for your projects, delivering value, benefits, and advantages to customers seeking superior quality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material ensures good durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate this diode into the system.

Surface Mount: YES

Surface mount capability provides easy installation and reduces the overall footprint of the diode on the PCB.

Maximum Reverse Current: 75 uA

Low reverse current ensures efficient performance and minimal power loss in the circuit.

Package Shape: RECTANGULAR

Rectangular package shape is space-saving and allows for efficient placement on the PCB.

No. of Terminals: 5

5 terminals provide flexibility in wiring connections and enable versatile integration of the diode in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for dense circuit designs.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where power efficiency is critical.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even under harsh operating conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for the diode to be used in a variety of environments, including extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connection of the diode in the circuit.

Case Connection: CATHODE

Cathode case connection simplifies the circuit design and ensures correct polarity.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes the risk of damage to the diode during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering of the diode to the PCB.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures reliability and quality of the diode, making it suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC and for power supply applications.

Maximum Forward Voltage (VF): 0.83 V

Low forward voltage drop results in minimal power loss and improved efficiency in the circuit.

Maximum Output Current: 12 A

High output current rating allows the diode to handle large current loads effectively.

Technology: SCHOTTKY

Schottky technology ensures fast switching speed and low forward voltage drop for efficient performance.

Terminal Form: FLAT

Flat terminal form provides secure and stable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 120 V

High reverse voltage rating ensures the diode can handle voltage spikes and surges without damage.

Maximum Non Repetitive Peak Forward Current: 200 A

High peak forward current rating allows the diode to handle short-term current surges effectively.

Diode Element Material: SILICON

Silicon diode element material is reliable and widely used in various electronic applications.

Technical Specifications

Diodes & Rectifiers NRVTS12120MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.83 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

75 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS12120MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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