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NTS12120MFST1G

Onsemi

NTS12120MFST1G by Onsemi

NTS12120MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a package style of small outline and matte tin terminal finish.

Median Price

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Lifecycle Status

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1k+

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$0.138

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$0.126

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AZTECH Wire

Italy . 639 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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A-Z Elektronik GmbH

Germany . 4,617 parts In-Stock

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Corphita

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UHIMA Technologies

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Overview

Discover the NTS12120MFST1G by Onsemi, a high-quality Schottky rectifier diode designed for efficiency in a compact package. Manufactured by Onsemi, a trusted name in the industry, this diode offers customers reliable performance and durability. Ideal for a wide range of applications, from power supplies to battery charging, this diode boasts a maximum output current of 12A and a maximum repetitive peak reverse voltage of 120V. Upgrade your electronic projects with the NTS12120MFST1G for enhanced performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good stability and durability to the diode, making it suitable for various operating conditions.

Config: SINGLE

The single configuration simplifies the circuit design and installation process.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and enabling automated assembly.

Maximum Reverse Current: 75 uA

Low reverse current ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment on the PCB.

No. of Terminals: 5

Having 5 terminals allows for versatile connectivity options in the circuit.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliable performance in various environments.

Technology: SCHOTTKY

Schottky technology provides lower forward voltage drop and faster switching speeds, improving efficiency.

Maximum Repetitive Peak Reverse Voltage: 120 V

Capable of handling higher reverse voltages, making it suitable for a wide range of applications.

Diode Element Material: SILICON

Silicon diode element offers good thermal stability and reliability under different operating conditions.

Technical Specifications

Diodes & Rectifiers NTS12120MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.83 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

75 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS12120MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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