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NTS1045MFST3G

Onsemi

NTS1045MFST3G by Onsemi

NTS1045MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It operates efficiently in temperatures ranging from -55 to 150°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. The package style is small outline with matte tin terminal finish, ideal for surface mount configurations.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 5,000 parts In-Stock

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$0.240

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5,000

$0.240

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Chip Stock

USA . 76,000 parts In-Stock

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76,000

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Vyrian

USA . 4,555 parts In-Stock

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4,555

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Digiode

USA . 2,368 parts In-Stock

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2,368

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,981 parts In-Stock

1+ parts

$0.272

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4,981

$0.272

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Semicontronic

India . 4,966 parts In-Stock

1+ parts

$0.272

100+ parts

$0.265

1k+ parts

$0.264

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4,966

$0.272

$0.265

$0.264

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Corohmni

South Africa . 463 parts In-Stock

1+ parts

$0.320

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463

$0.320

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Kepictronics

USA . 35,000 parts In-Stock

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35,000

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Problanco Electronics

Mexico . 6,871 parts In-Stock

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6,871

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Kulean Microsystems

USA . 6,552 parts In-Stock

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6,552

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SupplyDigital Components

Austria . 6,422 parts In-Stock

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TANS Electronics

Latvia . 3,322 parts In-Stock

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3,322

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Continental Prestige Electronics

USA . 1,771 parts In-Stock

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Corphita

USA . 1,488 parts In-Stock

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Argo Parts USA

USA . 1,462 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 724 parts In-Stock

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724

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Overview

Experience superior quality and performance with the NTS1045MFST3G by Onsemi. As a leading manufacturer in the industry, Onsemi's diodes and rectifiers are known for their reliability and efficiency. This product, featuring a Schottky technology and a maximum forward voltage of 0.57V, is perfect for applications where precision and consistency are crucial. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 45V, this diode offers exceptional value and benefits to customers looking for top-notch performance in their electronic devices. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the diode, making it a long-lasting choice.

Config:

SINGLE - Simplifies circuit design and installation, making it easier to work with.

Surface Mount:

YES - Allows for easy installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current:

120 uA - Ensures minimal power loss and efficient operation.

Package Shape:

RECTANGULAR - Offers a compact design that can fit into tight spaces.

No. of Terminals:

5 - Provides flexibility in connectivity options for various applications.

Package Style (Meter):

SMALL OUTLINE - Facilitates easy handling and installation in electronic devices.

Application:

EFFICIENCY - Ideal for applications where energy efficiency is a priority.

Maximum Operating Temperature:

150 °C - Can operate in high-temperature environments without compromising performance.

Minimum Operating Temperature:

55 °C - Suitable for use in extreme temperature conditions.

Terminal Finish:

Matte Tin (Sn) - annealed - Prevents corrosion and ensures reliable electrical connections.

Terminal Position:

DUAL - Offers versatility in mounting configurations for different applications.

Case Connection:

CATHODE - Simplifies circuit design and connectivity.

Maximum Time At Peak Reflow Temperature (s):

30 - Enables easy and efficient soldering during assembly.

Peak Reflow Temperature °C:

260 - Ensures reliable solder joints for long-term use.

Diode Type:

RECTIFIER DIODE - Ideal for converting AC to DC in power supply applications.

Maximum Forward Voltage (VF):

0.57 V - Provides efficient power conversion with minimal loss.

Maximum Output Current:

10 A - Capable of handling high current loads without overheating.

Technology:

SCHOTTKY - Offers fast switching speeds and low forward voltage drop.

Terminal Form:

FLAT - Facilitates easy soldering and secure connections.

Maximum Repetitive Peak Reverse Voltage:

45 V - Can withstand high reverse voltages, ensuring reliability in circuit protection.

Maximum Non Repetitive Peak Forward Current:

210 A - Capable of handling short-term high current surges without damage.

Diode Element Material:

SILICON - Provides reliable and consistent performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers NTS1045MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

210 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

120 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS1045MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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