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NTS10100MFST3G

Onsemi

NTS10100MFST3G by Onsemi

NTS10100MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates b/w -55 to 150 °C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and has a package style of small outline, ideal for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 12,157 parts In-Stock

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Digiode

USA . 1,754 parts In-Stock

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Ampacity Inc.

Singapore . 1,197 parts In-Stock

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$0.010

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$0.010

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Continental Prestige Electronics

USA . 4,131 parts In-Stock

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$0.444

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$0.238

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$0.191

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$0.444

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AZTECH Wire

Italy . 748 parts In-Stock

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$15.630

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A-Z Elektronik GmbH

Germany . 5,934 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,272 parts In-Stock

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Problanco Electronics

Mexico . 2,787 parts In-Stock

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SupplyDigital Components

Austria . 2,676 parts In-Stock

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Corphita

USA . 1,810 parts In-Stock

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TANS Electronics

Latvia . 530 parts In-Stock

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UHIMA Technologies

Türkiye . 470 parts In-Stock

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Corohmni

South Africa . 146 parts In-Stock

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Overview

Discover the NTS10100MFST3G by Onsemi, a high-quality Schottky rectifier diode that offers unparalleled efficiency and reliability. With its small outline package style and dual terminal position, this diode is perfect for a wide range of applications where high performance is essential. Onsemi, a trusted manufacturer known for their cutting-edge technology, ensures that this diode provides maximum output current of 10A and peak repetitive reverse voltage of 100V. Experience the value and benefits of this product, from its matte tin finish to its low forward voltage of 0.69V, making it a top choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and enhances its durability.

Config: SINGLE

The single configuration simplifies the design and installation process, making it a cost-effective choice.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 70 uA

The low maximum reverse current ensures efficiency and reliability in operation.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, suitable for applications where space is limited.

No. of Terminals: 5

With 5 terminals, this product offers flexibility in connection options, allowing for versatile applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it easy to integrate into various electronic devices without taking up much space.

Application: EFFICIENCY

Designed for efficiency, this product is ideal for applications where power consumption needs to be optimized.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures stable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature makes this product suitable for a wide range of operating conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connections, enhancing the overall reliability of the product.

Case Connection: CATHODE

The cathode case connection simplifies the wiring process and ensures proper polarity during installation.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time minimizes the risk of heat damage during assembly, ensuring product integrity.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for efficient and reliable soldering during manufacturing.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed for converting AC to DC with low voltage drop, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.69 V

The low maximum forward voltage drop ensures minimal power loss and high efficiency in operation.

Maximum Output Current: 10 A

With a maximum output current of 10A, this product can handle high power applications with ease.

Technology: SCHOTTKY

The Schottky technology offers fast switching speed, low forward voltage drop, and high efficiency, making it ideal for high-frequency applications.

Terminal Form: FLAT

The flat terminal form provides a stable and secure connection, ensuring reliable performance in various applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage rating makes this product suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 200 A

With a maximum non-repetitive peak forward current of 200A, this product can handle short-duration high current pulses without damage.

Diode Element Material: SILICON

The silicon diode element material offers reliability, stability, and efficiency in operation, making this product a durable choice for various applications.

Technical Specifications

Diodes & Rectifiers NTS10100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.69 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

70 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS10100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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