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NTS1045MFST1G

Onsemi

NTS1045MFST1G by Onsemi

NTS1045MFST1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.57V and a max output current of 10A. It is designed for efficiency applications, has a package style of small outline, and can operate in temperatures ranging from -55°C to 150°C.

Median Price

$0.324

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 24,000 parts In-Stock

1+ parts

$0.324

100+ parts

$0.305

1k+ parts

$0.276

10k+ parts

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24,000

$0.324

$0.305

$0.276

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Verical

USA . 24,000 parts In-Stock

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$0.344

24,000

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$0.344

Mouser Electronics

USA . 535 parts In-Stock

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$0.294

535

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$0.294

Distributors (In-Stock)

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Digiode

USA . 447 parts In-Stock

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$0.308

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447

$0.308

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Nova Conductors

Japan . 84 parts In-Stock

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$0.605

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84

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Flip Electronics

USA . 99,000 parts In-Stock

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 12,245 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 417 parts In-Stock

1+ parts

$0.217

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417

$0.217

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.217

100+ parts

$0.197

1k+ parts

$0.178

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300

$0.217

$0.197

$0.178

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Ampacity Inc.

Singapore . 12,414 parts In-Stock

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$0.250

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$0.250

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Semicontronic

India . 12,231 parts In-Stock

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$0.250

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$0.244

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$0.242

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12,231

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$0.242

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Corphita

USA . 353 parts In-Stock

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$0.292

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353

$0.292

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Continental Prestige Electronics

USA . 2,655 parts In-Stock

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$0.605

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$0.593

2,655

$0.605

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$0.593

Argo Parts USA

USA . 1,327 parts In-Stock

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$0.605

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$0.587

1,327

$0.605

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$0.587

Netroflash

USA . 100 parts In-Stock

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$0.605

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$0.593

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100

$0.605

$0.593

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RC Electronics

USA . 84,293 parts In-Stock

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Lixinc

USA . 15,065 parts In-Stock

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Perfect Parts

USA . 10,405 parts In-Stock

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Problanco Electronics

Mexico . 4,380 parts In-Stock

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SupplyDigital Components

Austria . 3,888 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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Kulean Microsystems

USA . 512 parts In-Stock

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512

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UHIMA Technologies

Türkiye . 216 parts In-Stock

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TANS Electronics

Latvia . 117 parts In-Stock

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Overview

Discover the NTS1045MFST1G by Onsemi, the ultimate solution for efficiency applications. With its high-quality construction and advanced technology, this rectifier diode offers unbeatable performance. Boasting a maximum output current of 10A and a maximum forward voltage of just 0.57V, this diode ensures optimal energy utilization. Its surface mount capability and small outline package style make it easy to integrate into any design. Trust Onsemi, a reputable manufacturer known for delivering reliable and innovative products. Upgrade your projects with the NTS1045MFST1G and experience the value, benefits, and advantages it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the diode, making it suitable for various environments.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and space.

Maximum Reverse Current: 120 uA

Low reverse current ensures efficiency and reliability of the diode.

Maximum Operating Temperature: 150 °C

Ability to operate at high temperatures without performance degradation, suitable for demanding applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, improving overall efficiency.

Technical Specifications

Diodes & Rectifiers NTS1045MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

210 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

120 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS1045MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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