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NTS12100EMFST1G

Onsemi

NTS12100EMFST1G by Onsemi

NTS12100EMFST1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.73V and output current of 12A. It operates b/w -55 °C to 175°C, ideal for efficiency applications due to its low reverse current of 55uA. This single-configured diode in a small outline package is surface-mountable and has a max repetitive peak reverse voltage of 100V.

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Cyclops Electronics Ltd

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AZTECH Wire

Italy . 185 parts In-Stock

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Kulean Microsystems

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Corphita

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iodParts Technologies Inc.

India . 900 parts In-Stock

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SupplyDigital Components

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Overview

Discover the NTS12100EMFST1G by Onsemi, a high-quality Schottky rectifier diode that offers unparalleled efficiency and performance. With a maximum output current of 12A and a maximum repetitive peak reverse voltage of 100V, this diode is perfect for a wide range of applications. Onsemi's reputation for excellence in manufacturing ensures that you are getting a reliable and durable product. Say goodbye to worries about overheating with a maximum operating temperature of 175 °C and enjoy the convenience of surface mount installation. Upgrade your electronics with the NTS12100EMFST1G and experience the benefits of superior technology and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy housing provides durability and protection for the diode, ensuring a longer lifespan and reliable performance.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on PCBs, saving time and space in electronic designs.

Maximum Reverse Current: 55 uA

Low reverse current ensures minimal power loss and improved efficiency in electronic circuits.

Maximum Forward Voltage (VF): 0.73 V

Low forward voltage drop results in reduced power dissipation and improved energy efficiency of the diode.

Maximum Output Current: 12 A

High output current capacity allows the diode to handle heavy loads and provide reliable power delivery.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and lower forward voltage drop compared to standard diodes, making them suitable for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NTS12100EMFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.73 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

55 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NTS12100EMFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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