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NTS10120MFST1G

Onsemi

NTS10120MFST1G by Onsemi

NTS10120MFST1G by Onsemi is a Schottky rectifier diode with max output current of 10A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a package style of small outline, suitable for surface mount assembly.

Median Price

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Lifecycle Status

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1k+

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AZTECH Wire

Italy . 727 parts In-Stock

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Problanco Electronics

Mexico . 3,953 parts In-Stock

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Kulean Microsystems

USA . 3,578 parts In-Stock

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Corphita

USA . 2,276 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 1,776 parts In-Stock

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iodParts Technologies Inc.

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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Overview

Experience the superior quality and reliability of the NTS10120MFST1G diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products that exceed expectations. This diode is perfect for various efficiency applications, offering a maximum output current of 10A and a maximum repetitive peak reverse voltage of 120V. With its Schottky technology and low forward voltage, this diode provides exceptional performance and value to customers looking for high-quality components. Trust Onsemi to provide innovative solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring durability and reliability.

Config: SINGLE

Simplifies circuit design and wiring, making installation easier.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving space and facilitating automated assembly.

Maximum Reverse Current: 55 uA

Low reverse current minimizes power losses and enhances overall efficiency.

Package Shape: RECTANGULAR

Allows for compact and space-saving placement on circuit boards.

No. of Terminals: 5

Provides multiple connection options, increasing flexibility in circuit configurations.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is limited, such as mobile devices or compact electronic equipment.

Application: EFFICIENCY

Designed for high efficiency performance, making it suitable for power management applications.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature environments, ensuring reliability in various conditions.

Minimum Operating Temperature: -55 °C

Suitable for use in low-temperature environments, offering versatility in operating conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a durable and reliable connection, ensuring long-term performance.

Terminal Position: DUAL

Offers flexibility in circuit design and connection options.

Case Connection: CATHODE

Clearly indicates the cathode connection for easy and correct installation.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Sufficient temperature for proper soldering and connection reliability.

Diode Type: RECTIFIER DIODE

Designed for rectification of current, making it suitable for power supply and conversion applications.

Maximum Forward Voltage (VF): 0.825 V

Low forward voltage drop minimizes power losses and improves efficiency.

Maximum Output Current: 10 A

Capable of handling high current loads, making it suitable for power-hungry applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage, ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminals make soldering and connection easy, ensuring a secure fit.

Maximum Repetitive Peak Reverse Voltage: 120 V

Can handle higher reverse voltages, providing protection against voltage spikes and transients.

Maximum Non Repetitive Peak Forward Current: 200 A

Capable of handling high forward currents for short durations, suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diodes offer reliable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers NTS10120MFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.825 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

55 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS10120MFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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